AD8183
Abstract: AD8183ARU AD8183-EVAL AD8185 AD8185ARU AD8185-EVAL C3689
Text: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/s Slew Rate G = +1, 2 V Step 1150 V/s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%
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AD8183/AD8185
24-Lead
RU-24)
C3689
AD8183
AD8183ARU
AD8183-EVAL
AD8185
AD8185ARU
AD8185-EVAL
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PDF
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AD8185
Abstract: AD8185ARU AD8183 AD8183ARU AD8183-EVAL AD8185-EVAL C3689 folded cascode second stage DB200
Text: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/s Slew Rate G = +1, 2 V Step 1150 V/s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%
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Original
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AD8183/AD8185
24-Lead
RU-24)
C3689
AD8185
AD8185ARU
AD8183
AD8183ARU
AD8183-EVAL
AD8185-EVAL
folded cascode second stage
DB200
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PDF
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Untitled
Abstract: No abstract text available
Text: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQPF15P12
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PDF
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Untitled
Abstract: No abstract text available
Text: 380 MHz, 25 mA, Triple 2:1 Multiplexers AD8183/AD8185 a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/s Slew Rate G = +1, 2 V Step
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Original
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AD8183/AD8185
ConnectinAD8185
24-Lead
RU-24)
C3689â
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PDF
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fqpf15p12
Abstract: FQP15P12 P-CHANNEL MOSFET fqpf15
Text: FQP15P12/FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 20 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQP15P12
FQPF15P12
FQP15P12/FQPF15P12
P-CHANNEL MOSFET
fqpf15
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PDF
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CHM5P03PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM5P03PAGP CURRENT 15 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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Original
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CHM5P03PAGP
O-252)
O-252
CHM5P03PAGP
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PDF
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ZL50010QCG1
Abstract: GR-1244-CORE MS-026 ZL50010 32CH1
Text: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0
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ZL50010
STi0-15
ZL50010/QCC
ZL50010/GDC
ZL50010QCG1
ZL50010GDG2
ZL50010QCG1
GR-1244-CORE
MS-026
ZL50010
32CH1
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PDF
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Untitled
Abstract: No abstract text available
Text: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0
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ZL50010
STi0-15
ZL50010/GDC
ZL50010QCG1
ZL50010GDG2
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PDF
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TP2635
Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A
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TP2635
TP2640
-350V
TP2635N3
-400V
TP2640LG
TP2640N3
TP2640ND
678pF
263pF
TP2635
TP2635N3
TP2640
TP2640LG
TP2640N3
TP2640ND
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PDF
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TP2635
Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A
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Original
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TP2635
TP2640
-350V
TP2635N3
-400V
TP2640LG
TP2640N3
TP2640ND
678pF
263pF
TP2635
TP2635N3
TP2640
TP2640LG
TP2640N3
TP2640ND
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PDF
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TP2635
Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V
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TP2635
TP2640
-350V
TP2635N3
TP2635ND
-400V
TP2640LG
TP2640N3
TP2640ND
678pF
TP2635
TP2635N3
TP2635ND
TP2640
TP2640LG
TP2640N3
TP2640ND
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM5P03PAPT CURRENT 15 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small flat package. TO-252A
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CHM5P03PAPT
O-252A
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PDF
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ID9A
Abstract: WTD9575 D9A marking
Text: WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN CURRENT DRAIN -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V *Simple Drive Requirement
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Original
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WTD9575
O-252
O-252)
P0001
01-Aug-05
ID9A
WTD9575
D9A marking
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PDF
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TN6Q04
Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use
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O-220
O-220ML
O-220FI
O-220FI5H
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2SJ585
TN6Q03
2sk4100
2SK4096LS
2SK4100ls
2SJ655
2SK3748
2SK4087LS datasheet
2SK4101LS
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PDF
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030 18a diode
Abstract: No abstract text available
Text: WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <90m Ω@V GS =-10V 4 *Simple Drive Requirement
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Original
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WTD40N03
O-252
O-252)
12-Jul-07
030 18a diode
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PDF
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AD8183
Abstract: AD8183-EVAL FTH A 001 26 10 AD8183ARU AD8185 AD8185ARU AD8185-EVAL folded cascode second stage
Text: ANALOG DEVICES FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz B andwidth -3 dB 200 m V p-p 310 MHz B andwidth (-3 dB) 2 V p-p 1000 S lew Rate G = +1, 2 V Step 1150 S lew Rate G = +2, 2 V Step Fast Settling Tim e of 15 ns to 0.1%
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OCR Scan
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AD8183/AD8185*
AD8183/AD8185
24-Lead
RU-24)
AD8183
AD8183-EVAL
FTH A 001 26 10
AD8183ARU
AD8185
AD8185ARU
AD8185-EVAL
folded cascode second stage
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSFETS N CHANNEL POWER MOSFETS - SURFACE MOUNT PACKAGE LCC-3 CERAMIC CHIP CARRIER cy>*S VOr DEVICE TYPE r DS ON CISS p f* VOLTS PEAK 'd AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320 400 3.3 1.80 20 350 SNLC420 500 2.5 3.08 20 350 SNLC130
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OCR Scan
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SNLC320
SNLC420
SNLC130
SNLC230
SNLC330
SNLC430
SNLC140
SNLC240
SNLC340
SNLC440
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PDF
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PL3120
Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
Text: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at
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OCR Scan
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HCPL-3150
HCPL-315J
HCPL-315J:
PL-315J:
5965-4780E
5966-2495E
PL3120
V0 3150 optocoupler
PL3150
PL-3120
atd2a
SMPS A43
UCL-200
Xi 6000 Series UPS
ups art 600
hp 3150
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PDF
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4600 fet transistor
Abstract: POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 MTD20P06HDL Z25 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL HDTM OS E-FET™ High D en sity P o w er FET DPAK fo r S u rface M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS
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OCR Scan
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il180
li120
MTD20P06HDL
0E-05
0E-04
0E-02
0E-01
4600 fet transistor
POWER MOSFET 4600
MOSFET 4600
4600 mosfet
369A-13
AN569
Z25 transistor
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PDF
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19P20
Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Text: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr
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OCR Scan
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IXTH19P20,
19P20,
IXTH19P20
IXTH19P15
IXTM19P20
IXTM19P15
50-200V,
O-247
O-204
-65to
19P20
Mosfet K 135 To3
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PDF
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stl 106 a
Abstract: No abstract text available
Text: MP3276 p y y m Fault Protected 16-Channel, 12-Bit Data Acquisition Subsystem jU l. FEATURES • Fault Protected 16-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and 3-state Outputs • Fast Conversion, less than 15|.iS • Microprocessor Bus Interface
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OCR Scan
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MP3276
16-Channel,
12-Bit
16-Channel
MP3274
MP3275
stl 106 a
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PDF
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MA758
Abstract: IF FM detector 8 channel RF Control Circuit rf detector MA721 MA780 a739 rf converter 6 Channel audio Mixer DIAGRAM single channel audio amp
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C38 L-C37 iuA721 mA758 16 1 Pv+ AMP 2 IN 15 ^ 2 AMP 2 I— DECOUPLE I— 3 AMP 1 OUT 14 □ AMPLIFIER OUT AMP 2 OUT ^2 GND 2 LEFT CHANNEL DE-EMPHASIS fm a m p in LEFT CHANNEL OUT 12 OND1 Q ^ FM AMP DECOUPLE ,11
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OCR Scan
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L-C37
iuA721
L-C39
MA780
L-C23
mA2136
L-C24
/uA3075
L-C27
mA3089
MA758
IF FM detector
8 channel RF Control Circuit
rf detector
MA721
MA780
a739
rf converter
6 Channel audio Mixer DIAGRAM
single channel audio amp
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PDF
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136y
Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up
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OCR Scan
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MRF136
MRF136Y
MRF136Y
AN215A
DL110
136y
2117 equivalent
p channel de mosfet
zt173
MOTOROLA S 5068
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PDF
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MTW20P10
Abstract: MOSFET MTW 20P10 20P10 20p10 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect tran sisto r T O -247 w ith Isolated Mounting Hole MTW 20P10 Motorola Preferred Device TMOS POWER FET 20 AMPERES 100 VOLTS RDS on = 0*15 OHM P-Channel Enhancement-Mode Silicon Gate
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OCR Scan
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PDF
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