Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P CHANNEL 15 AMP Search Results

    P CHANNEL 15 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    P CHANNEL 15 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AD8183

    Abstract: AD8183ARU AD8183-EVAL AD8185 AD8185ARU AD8185-EVAL C3689
    Text: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step 1150 V/␮s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%


    Original     		PDF AD8183/AD8185 24-Lead RU-24) C3689 AD8183 AD8183ARU AD8183-EVAL AD8185 AD8185ARU AD8185-EVAL

    AD8185

    Abstract: AD8185ARU AD8183 AD8183ARU AD8183-EVAL AD8185-EVAL C3689 folded cascode second stage DB200
    Text: a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step 1150 V/␮s Slew Rate G = +2, 2 V Step Fast Settling Time of 15 ns to 0.1%


    Original     		PDF AD8183/AD8185 24-Lead RU-24) C3689 AD8185 AD8185ARU AD8183 AD8183ARU AD8183-EVAL AD8185-EVAL folded cascode second stage DB200

    Untitled

    Abstract: No abstract text available
    Text: FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 0.2 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQPF15P12

    Untitled

    Abstract: No abstract text available
    Text: 380 MHz, 25 mA, Triple 2:1 Multiplexers AD8183/AD8185 a FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz Bandwidth –3 dB 200 mV p-p 310 MHz Bandwidth (–3 dB) 2 V p-p 1000 V/␮s Slew Rate G = +1, 2 V Step


    Original     		PDF AD8183/AD8185 ConnectinAD8185 24-Lead RU-24) C3689â

    fqpf15p12

    Abstract: FQP15P12 P-CHANNEL MOSFET fqpf15
    Text: FQP15P12/FQPF15P12 P-Channel QFET MOSFET -120 V, -15 A, 20 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQP15P12 FQPF15P12 FQP15P12/FQPF15P12 P-CHANNEL MOSFET fqpf15

    CHM5P03PAGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM5P03PAGP CURRENT 15 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE


    Original     		PDF CHM5P03PAGP O-252) O-252 CHM5P03PAGP

    ZL50010QCG1

    Abstract: GR-1244-CORE MS-026 ZL50010 32CH1
    Text: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0


    Original     		PDF ZL50010 STi0-15 ZL50010/QCC ZL50010/GDC ZL50010QCG1 ZL50010GDG2 ZL50010QCG1 GR-1244-CORE MS-026 ZL50010 32CH1

    Untitled

    Abstract: No abstract text available
    Text: ZL50010 Flexible 512 Channel DX with Enhanced DPLL Data Sheet Features VDD • • • • • • • • • RESET Data Memory P/S Converter Output HiZ Control Connection Memory Microprocessor Interface and DPLL OSC Output Timing STo0-15 STOHZ0-15 FPo0 CKo0


    Original     		PDF ZL50010 STi0-15 ZL50010/GDC ZL50010QCG1 ZL50010GDG2

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    TP2635

    Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V


    Original     		PDF TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 678pF TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM5P03PAPT CURRENT 15 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small flat package. TO-252A


    Original     		PDF CHM5P03PAPT O-252A

    ID9A

    Abstract: WTD9575 D9A marking
    Text: WTD9575 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN CURRENT DRAIN -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <90m Ω@V GS =-10V *Simple Drive Requirement


    Original     		PDF WTD9575 O-252 O-252) P0001 01-Aug-05 ID9A WTD9575 D9A marking

    TN6Q04

    Abstract: 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS
    Text: Large Signal Packages Selector Guide CONTENTS ŝQuick Selection Guide P-channel New 2 •TO-3JML Package 14 ŝQuick Selection Guide N-channel New 3~5 ■TO-3PBL Package 14 6,7 ■TO-3PB Package 14 8.9 ■TO-3PML Package 14 15 ŝSwitching Power Supply ŝMotor Drive Use


    Original     		PDF O-220 O-220ML O-220FI O-220FI5H O-220FI O-220FI5H-HB O-220FI5H-HA TN6Q04 2SJ585 TN6Q03 2sk4100 2SK4096LS 2SK4100ls 2SJ655 2SK3748 2SK4087LS datasheet 2SK4101LS

    030 18a diode

    Abstract: No abstract text available
    Text: WTD40N03 Surface Mount P-Channel Enhancement Mode POWER MOSFET 3 DRAIN DRAIN CURRENT -15 AMPERES P b Lead Pb -Free DRAIN SOURCE VOLTAGE -60 VOLTAGE 1 GATE Features: *Super High Dense Cell Design For Low R DS(ON) 2 SOURCE R DS(ON) <90m Ω@V GS =-10V 4 *Simple Drive Requirement


    Original     		PDF WTD40N03 O-252 O-252) 12-Jul-07 030 18a diode

    AD8183

    Abstract: AD8183-EVAL FTH A 001 26 10 AD8183ARU AD8185 AD8185ARU AD8185-EVAL folded cascode second stage
    Text: ANALOG DEVICES FEATURES Fully Buffered Inputs and Outputs Fast Channel-to-Channel Switching: 15 ns High Speed 380 MHz B andwidth -3 dB 200 m V p-p 310 MHz B andwidth (-3 dB) 2 V p-p 1000 S lew Rate G = +1, 2 V Step 1150 S lew Rate G = +2, 2 V Step Fast Settling Tim e of 15 ns to 0.1%


    OCR Scan     		PDF AD8183/AD8185* AD8183/AD8185 24-Lead RU-24) AD8183 AD8183-EVAL FTH A 001 26 10 AD8183ARU AD8185 AD8185ARU AD8185-EVAL folded cascode second stage

    Untitled

    Abstract: No abstract text available
    Text: MOSFETS N CHANNEL POWER MOSFETS - SURFACE MOUNT PACKAGE LCC-3 CERAMIC CHIP CARRIER cy>*S VOr DEVICE TYPE r DS ON CISS p f* VOLTS PEAK 'd AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320 400 3.3 1.80 20 350 SNLC420 500 2.5 3.08 20 350 SNLC130


    OCR Scan     		PDF SNLC320 SNLC420 SNLC130 SNLC230 SNLC330 SNLC430 SNLC140 SNLC240 SNLC340 SNLC440

    PL3120

    Abstract: V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150
    Text: Tljjm H EW LE TT » mLHM P A C K A R D 0.5 Amp Output Current IGBT Gate Drive Optocoupler Technical Data HCPL-3150 Single Channel HCPL-315J (Dual Channel) Features • 0.5 A Minimum Peak Output Current • 15 kV/|is Minimum Common Mode Rejection (CMR) at


    OCR Scan     		PDF HCPL-3150 HCPL-315J HCPL-315J: PL-315J: 5965-4780E 5966-2495E PL3120 V0 3150 optocoupler PL3150 PL-3120 atd2a SMPS A43 UCL-200 Xi 6000 Series UPS ups art 600 hp 3150

    4600 fet transistor

    Abstract: POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 MTD20P06HDL Z25 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL HDTM OS E-FET™ High D en sity P o w er FET DPAK fo r S u rface M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS


    OCR Scan     		PDF il180 li120 MTD20P06HDL 0E-05 0E-04 0E-02 0E-01 4600 fet transistor POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 Z25 transistor

    19P20

    Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
    Text: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr


    OCR Scan     		PDF IXTH19P20, 19P20, IXTH19P20 IXTH19P15 IXTM19P20 IXTM19P15 50-200V, O-247 O-204 -65to 19P20 Mosfet K 135 To3

    stl 106 a

    Abstract: No abstract text available
    Text: MP3276 p y y m Fault Protected 16-Channel, 12-Bit Data Acquisition Subsystem jU l. FEATURES • Fault Protected 16-Channel 12-Bit A/D Converter with Sample & Hold, Reference, Clock and 3-state Outputs • Fast Conversion, less than 15|.iS • Microprocessor Bus Interface


    OCR Scan     		PDF MP3276 16-Channel, 12-Bit 16-Channel MP3274 MP3275 stl 106 a

    MA758

    Abstract: IF FM detector 8 channel RF Control Circuit rf detector MA721 MA780 a739 rf converter 6 Channel audio Mixer DIAGRAM single channel audio amp
    Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C38 L-C37 iuA721 mA758 16 1 Pv+ AMP 2 IN 15 ^ 2 AMP 2 I— DECOUPLE I— 3 AMP 1 OUT 14 □ AMPLIFIER OUT AMP 2 OUT ^2 GND 2 LEFT CHANNEL DE-EMPHASIS fm a m p in LEFT CHANNEL OUT 12 OND1 Q ^ FM AMP DECOUPLE ,11


    OCR Scan     		PDF L-C37 iuA721 L-C39 MA780 L-C23 mA2136 L-C24 /uA3075 L-C27 mA3089 MA758 IF FM detector 8 channel RF Control Circuit rf detector MA721 MA780 a739 rf converter 6 Channel audio Mixer DIAGRAM single channel audio amp

    136y

    Abstract: 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F136 M R F 136Y The RF MOSFET Line RF P ow er F ie ld -E ffe ct Transistors N -Channel E nhancem ent-M ode MOSFETs 15 W, 30 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FETs . . designed for wideband large-signal amplifier and oscillator applications up


    OCR Scan     		PDF MRF136 MRF136Y MRF136Y AN215A DL110 136y 2117 equivalent p channel de mosfet zt173 MOTOROLA S 5068

    MTW20P10

    Abstract: MOSFET MTW 20P10 20P10 20p10 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET Power Field Effect tran sisto r T O -247 w ith Isolated Mounting Hole MTW 20P10 Motorola Preferred Device TMOS POWER FET 20 AMPERES 100 VOLTS RDS on = 0*15 OHM P-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF