AEG TFK TELEFUNKEN
Abstract: Telefunkenzeitung Nauen tfk u 226 b Deutsche Post siemens zeitung Telefunken-Zeitung TFK 236 dynamo kam 124
Text: Inhalts-Verzeichnis Abb 110. Dampfer „Imperator“. . . . . . . . . . . . . . „Nomen est omen“ Telefunken zum 10.Geburtstage . . . . Funkentelegraphische Weltprojekte . . . . . . . . . . . . Um die Gründung der Telefunkengesellschaft 1903 hervorragend verdiente Persönlichkeiten . . . . . . .
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EP2S15
Abstract: EP2S180 EP2S30 EP2S60 EP2S90 SSTL-18 Pin Out For EP2S15
Text: 5. DC & Switching Characteristics SII51005-4.4 Operating Conditions Stratix II devices are offered in both commercial and industrial grades. Industrial devices are offered in -4 speed grades and commercial devices are offered in -3 fastest , -4, -5 speed grades.
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SII51005-4
EP2S15
EP2S180
EP2S30
EP2S60
EP2S90
SSTL-18
Pin Out For EP2S15
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336 16k 030
Abstract: LVDS fin 1002 Altera Quartus II v.11.0
Text: 5. DC & Switching Characteristics SII51005-4.5 Operating Conditions Stratix II devices are offered in both commercial and industrial grades. Industrial devices are offered in -4 speed grades and commercial devices are offered in -3 fastest , -4, -5 speed grades.
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SII51005-4
336 16k 030
LVDS fin 1002
Altera Quartus II v.11.0
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PCI 6601
Abstract: 974-1021 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90 SSTL-18
Text: 5. DC & Switching Characteristics SII51005-4.3 Operating Conditions Stratix II devices are offered in both commercial and industrial grades. Industrial devices are offered in -4 speed grades and commercial devices are offered in -3 fastest , -4, -5 speed grades.
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SII51005-4
PCI 6601
974-1021
EP2S15
EP2S180
EP2S30
EP2S60
EP2S90
SSTL-18
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Untitled
Abstract: No abstract text available
Text: 3.2 EPIC D A - V I N C I H - B Gehäuse / Hood / Capot Solide Bauform und ein umfangreiches Programm an passenden Einsätzen sind die markanten Merkmale dieses Gehäuses. Diese Bauform lässt sich aus dem Industriestandard nicht mehr wegdenken. Die Gehäuse der H-B
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SGR with V-I characteristics
Abstract: No abstract text available
Text: 3.2 EPIC D A - V I N C I H - B Gehäuse / Hood / Capot Solide Bauform und ein umfangreiches Programm an passenden Einsätzen sind die markanten Merkmale dieses Gehäuses. Diese Bauform lässt sich aus dem Industriestandard nicht mehr wegdenken. Die Gehäuse der H-B
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EP2S60F
Abstract: OV 5642 27631 VHDL fpga stratix II ep2s180
Text: Section I. Stratix II Device Family Data Sheet This section provides the data sheet specifications for Stratix II devices. This section contains feature definitions of the internal architecture, configuration and JTAG boundary-scan testing information, DC
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vhdl code for FFT 32 point
Abstract: bst 1046 sensor 3414 EP2S15 EP2S30 EP2S60 P941
Text: Stratix II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com SII5V1-4.3 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED/VOLTAGE VIDEO AMPLIFIER M.S. KENNEDY CORP. 1903 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • 10OVpp Output Signal Into 10PF • Ultra Fast Transition Times — 3.5nS • User Adjustable Contrast and Brightness • TTL Compatible Blanking
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10OVpp
RS170,
RS343
Mil-H-38534
1903B-4
1903B-6
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2n6798 jantx
Abstract: 2N6798 IH0063 2N6756 QPL-19500
Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited
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2N6798
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2n6798 jantx
IH0063
2N6756
QPL-19500
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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P 600 I 1903
Abstract: No abstract text available
Text: 7 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION APRIL 4 COPYRIG H T RESERVED. 1303 AMP PR ODU C TS BY MAY AMP BE I N C O R P O R A T E D , HARR I S B U R G , P A . COVERED BY U. 5. AND F O R E I G N ALL IN TERN A TIO N AL
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AR2699
AD-4171
AD-4707
amg33743
vO26d/dskO
t4398/am
d33743/e
P 600 I 1903
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GERMANIUM SMALL SIGNAL TRANSISTORS
Abstract: AD142 AF239 AU113 AD143 GERMANIUM SMALL SIGNAL PNP TRANSISTORS 2N4358 BSX29 fairchild semiconductors 2N2894
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors Metal Can T 018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
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BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
GERMANIUM SMALL SIGNAL TRANSISTORS
AD142
AF239
AU113
AD143
GERMANIUM SMALL SIGNAL PNP TRANSISTORS
2N4358
fairchild semiconductors
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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DIODE REDRESSEMENT
Abstract: 3909 diode byx Thomson-CSF diode hacheur diode byx 65 400 wj s6c 1N3909 1N3913 thomson diodes
Text: s G S-THOMSON I^ Q uT d” ! 7^5=1237 Q QQ 2 G Û 3 1N 3909—1N 3913, R BYX 64-600, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS. SUPERSWITCH FAST RECOVERY RECTIFIER DIODES D/ODES DE REDRESSEMENT RAPIDES 59 C 0 2 0 8 3 FAST RECOVERY SUPERSWITCH
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1/4-28UNF
250cm
310cm
CB-34)
DIODE REDRESSEMENT
3909
diode byx
Thomson-CSF diode
hacheur
diode byx 65 400
wj s6c
1N3909
1N3913
thomson diodes
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Untitled
Abstract: No abstract text available
Text: Ù J Â T K I N S - JO H N S O N CO 73 D E § T b E lt .S 'i □ □ O t .T a i 3 T -S H ! 1 0 0 • 2 0 0 0 MHz THIN FILM SPST POWER SWITCH • LOW INSERTION LOSS: < 1.8 dB TYP. • HIGH CW INPUT POWER CAPABILITY: 2 WATTS • HIGH ISOLATION: > 4 0 dB (TYP.)
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Untitled
Abstract: No abstract text available
Text: s G S-THOMSON I^ Q uT d” ! 7^5=1237 Q QQ 2 G Û 3 1N 3909—1N 3913, R BYX 64-600, (R) THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS. SUPERSWITCH FAST RECOVERY RECTIFIER DIODES D/ODES DE REDRESSEMENT RAPIDES 59 C 0 2 0 8 3 FAST RECOVERY SUPERSWITCH RECTIFIERS
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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INDUCTION heating
Abstract: FP-9-200 SO-100 alcon 200 MFD alcon
Text: r Represented and Distributed by ICD Sales Corp - www.icd-sales.com C O N D U C T I O N COOLED CAPACITORS FP-9-200 Conduction Cooled Capacitors For Induction Heating electronics ri p riv a te lim ite d Highlights • • • • • C o n d u c tio n c o o le d
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FP-9-200
400Vrms
INDUCTION heating
SO-100
alcon
200 MFD alcon
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HFA16TB60
Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Text: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)
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AN-993
HFA16TB60
HFA20TB120
FA08TB60
hfa16tb60c
HFA15TB60
Telex-95219
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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