Untitled
Abstract: No abstract text available
Text: Evaluation Board User Guide UG-263 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the ADM1275 and ADM1276 FEATURES GENERAL DESCRIPTION Full functions support evaluation kit for the ADM1275 and
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UG-263
ADM1275
ADM1276
ADT75
UG09773-0-9/11
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J122 SMD TRANSISTOR
Abstract: 74c906 u3g diode Diode BAT41 J122 SMD SMD Tantalum code capacitor color IC 74C906 J120 SMD smd transistor wr smb schottky diode s4
Text: Evaluation Board for 10-Bit ADCs with On-Chip Temperature Sensor EVAL-AD7816/7/8EB FEATURES THE AD7816/AD7817/AD7818 10-bit ADC with 9 µs conversion time 1 AD7818 and 4 (AD7817) single-ended analog input channels The AD7816 is a temperature-measurement-only device
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10-Bit
EVAL-AD7816/7/8EB
AD7818)
AD7817)
AD7816
AD7816/AD7817/AD7818
EVAL-AD7816/7/8EB
EB04586
J122 SMD TRANSISTOR
74c906
u3g diode
Diode BAT41
J122 SMD
SMD Tantalum code capacitor color
IC 74C906
J120 SMD
smd transistor wr
smb schottky diode s4
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PDF
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dali schematic
Abstract: CA50-051-830-L36 CA50 OT75 DIMMABLE dali OT20 osram dali CA-50 DALI CONTROL IEC wiring schematic with overload
Text: www.osram.com/LED-Systems COINlight Advanced 50 - CA50 Data Sheet Benefits Picture for Datasheet is missing !!! ¾ Powered by Golden DRAGON Plus ¾ 36° optics for wide flood ¾ Available in white, 3 colour temperatures ¾ Low energy consumption Applications
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CA50-051-854-L36
CA50-051-840-L36
CA50-051-830-L36
dali schematic
CA50-051-830-L36
CA50
OT75
DIMMABLE dali
OT20
osram dali
CA-50
DALI CONTROL
IEC wiring schematic with overload
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PDF
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ms 696 npn transistor
Abstract: No abstract text available
Text: Æ T SCS-THOMSON ÎMÛimiigïFIMQtgS SGSÌF461 FAST-SWÎTCHHOLL^ NPN TRANSISTOR . VERY HIGH SWITCHING SPEED • NPN TRANSISTOR . LOW BASE-DRIVE REQUIREMENTS APPLICATIONS: . SWITCH MODE POWER SUPPLIES DESCRIPTION The SGSIF461 is manufactured using Multiepitaxial Mesa technology for cost-effective
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SGSIF461
ms 696 npn transistor
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Untitled
Abstract: No abstract text available
Text: 2SK1505-M SIPM O S FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - III S E R I E S • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications !
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2SK1505-M
A2-214
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PDF
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Untitled
Abstract: No abstract text available
Text: Technical Data Silicon Monolithic Bipolar Digital Integrated Circuit TD62081AP/AF TD62082AP/AF TD62083AP/AF TD62084AP/AF 8-channel Darlington Sink Driver The TD62081 AP/AF Series features high-voltage, high current Darlington drivers composed of eight NPN
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TD62081AP/AF
TD62082AP/AF
TD62083AP/AF
TD62084AP/AF
TD62081
TD62081AP
TD62082AP
TD62083AP
DIP18-P-300D
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PDF
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RM73B2B
Abstract: eta trw bead murata RM73B2BT102J VJ21 HLMP3301-010 HLMP3502 RM73B3A qi 20pin HFBR-5205
Text: I TEXAS INSTRUMENTS Semiconductor Group TNETA1561/TNETA1500 PCI Reference Schematic Notebook Physical Interface SONET 155-Mbit/s, Multimode Fiber Connector SD N V007 July 12,1995 Questions should be directed to: TNETA TECHNICAL SUPPORT LINE *4atm@.ti.com
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TNETA1561/TNETA1500
155-Mbit/s,
SDNV007
TNETA1561
TNETA1500
TNETA1561
SDNS01
9E668
RM73B2B
eta trw
bead murata
RM73B2BT102J
VJ21
HLMP3301-010
HLMP3502
RM73B3A
qi 20pin
HFBR-5205
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PDF
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2SK1917-M
Abstract: 25N20
Text: 2SK1917-M S IP M O S F U JI P O W E R M O S -F E T ^ N-CHANNEL SILICON POWER MOS-FET • Features SER IE S ■ Outline Drawings • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p ow er • High voltage • Vc,s = ± 3 0 V G uarantee
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2SK1917-M
SC-67
20Kil)
A2-268
25N20
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PDF
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2000 watts audio amplifier schematics
Abstract: P channel MOSFET 10A schematic OM9323SC OM9324SC OM9325SC OM9326SC CFES
Text: T M3E D 1= 70 ^0 73 GGDQT^Ö Ö IOMNI OM9323SC OM9325SC OM9324SC OM9326SC " T S 2 - - \3 > - Z S POWER MOSFETS IN 5 PIN HERMETIC SIP PACKAGE OMNIREL CORP Complementary N-Channel And P-Channel Power MOSFETs In 5 Pin Hermetic SIP Package FEATURES • LOW Rps on
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OM9323SC
OM9325SC
OM9324SC
OM9326SC
2000 watts audio amplifier schematics
P channel MOSFET 10A schematic
OM9326SC
CFES
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PDF
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maa 550
Abstract: OM6025SA OM6026SA
Text: OM6025SA QM6026SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V, 500V, N-Channel, Up To 24 Amp Size 6 MOSFETs, High Energy Capability FEATURES • Isolated Hermetic Metal Package • Size 6 Die, High Energy • Fast Switching, Low Drive Current
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OM6025SA
O-254AA
MIL-S-19500,
OM6Q25SC
QM6026SC
maa 550
OM6026SA
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PDF
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2SK1013-01
Abstract: IZHT130 SC-65
Text: 2SK1013-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S lOutline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gss = ± 3 0 V Guarantee
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2SK1013-01
SC-65
IZHT130
2SK1013-01
SC-65
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PDF
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STP5N80
Abstract: No abstract text available
Text: 7 ^ 2 ^ 2 3 7 0 0 M b 2 ö l b?M • S G T H _ SGS-THOMSON STP5N80 STP5N80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STP5N 80 STP5N80FI ■ . ■ . . ■ ■ V d ss RDS on Id 800 V 800 V <20 < 2 i! 5.5 A 3.1 A TYPICAL RDS(on) = 1.65 £2
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STP5N80
STP5N80FI
STP5N80/FI
STP5N80
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PDF
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DIODE a116
Abstract: No abstract text available
Text: 2 M B I 5 F - 0 6 5 A IGBT IGBT MODULE : Features • Low Saturation Voltage • (M O S- V — Hfcifi) • M i# § fi^ £ !J Voltage Drive Variety of Power Capacity Series ! A p p licatio n s •i — >/< — ^ Inverter for Motor Drive • A C , D C it — tfT7>'7P AC-DC Servo Drive Amplifier
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12S1-?
I95t/R89)
Shl50
DIODE a116
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PDF
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a2198
Abstract: 2SK1388 A2-198
Text: 2SK1388 FUJI POWER M O S-FET N-C HANNEL SILICON POWER MOS-FET F-III SERIES •Outline Drawings ■ leatures • H gh current • Low on-resistance • N d secondary breakdown • Low driving power • H gh forward Transconductance ■Applications • Motor controllers
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2SK1388
a2198
2SK1388
A2-198
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UTC 1316
Abstract: 251C 30S3 UTC 1316 amplifier
Text: 1 M B I 6 L P - 0 6 6 o o a • W f ê ' + î È : Outline Drawings IGBT . _93±03 IG B T MODULE ■ 4 : Feat ur es • f t i S . X 'f "J + ' s y • ■ J E td b H igh S peed S w itc h in g V olta ge D rive L o w In d u c ta n c e M o d u le S tru c tu re
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MBI600LP-060
l95t/R89
UTC 1316
251C
30S3
UTC 1316 amplifier
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK950 FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • S w tching regulators • UPS • DC DC converters
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2SK950
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PDF
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5N100C
Abstract: No abstract text available
Text: O M N IR E L CORP IM E 1 ^ ^ 0 7 3 0 0 0 0 2 1 ,4 M I " OM35N10C OM15N50C QM30N20C OM5N1QOC POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-258AA PACKAGE T ^ 3 100V Thru 1000V, Up To 35 Amp, N-Channel MOSFET With Low RDS(qn Characteristics > FEATURES Isolated Hermetic Metal Package
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OM35N10C
OM15N50C
QM30N20C
O-258AA
5N100C
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PDF
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ka368
Abstract: st 2904 KA368A
Text: KA258/A, KA358/A, KA2904 DUAL OPERATIONAL AMPLIFIER DUAL OPERATIONAL AMPLIFIERS The KA258 series consists of four independant, high gain, internally frequency compensated operational amplifiers which were designed specifically to oper ate from a single power supply over a wide range of voltage.
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KA258/A,
KA358/A,
KA2904
KA258
100d8
KA20O4
ka368
st 2904
KA368A
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PDF
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OM6017SA
Abstract: OM6019SA OM6020SA MOSFET POWER AMP
Text: OM6017SA OM6019SA OM6Q18SA OM6020SA POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 25 Amp, N-Channel M O SFET In Herm etic Metal Package FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching L ow R DS on
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OM6017SA
OM6019SA
OM6Q18SA
OM6020SA
O-254AA
MIL-S-19500,
OM6020SA
MOSFET POWER AMP
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PDF
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ID73
Abstract: No abstract text available
Text: OM6021SC OM6023SC OM6Q22SC OM6Q24SC POWER MOSFETS IN HERMETIC PACKAGE 100V Thru 500V, Up To 35 Amp, N-Channel Power MOSFETs In JEDEC TO-259AA Package FEATURES • Isolated Side-Tab Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power
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OM6021SC
OM6023SC
OM6Q22SC
OM6Q24SC
O-259AA
MIL-S-19500,
O-259AA
G0G1317
ID73
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PDF
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OM6413SP3
Abstract: OM6414SP3 OM6415SP3 OM6416SP3 OM6414
Text: OM6413SP3 OM6414SP3 OM6415SP3 OM6416SP3 THREE PHASE MOSFET HALF BRIDGE IN A PLASTIC SIP PACKAGE 100V Thru 500V, Up to 6 Amp, Three Phase M O SFET Half Bridge FEATURES • • • • • • Isolated High Density, Low Profile Package 6 M O S F E T s Per Package
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OM6413SP3
OM6414SP3
OM6415SP3
OM6416SP3
b7flc3073
OM6414SP3
OM6416SP3
OM6414
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PDF
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lateral mosfet audio amplifier
Abstract: OM6009SA OM6011SA OM6109SA OM6110SA OM6111SA OM6112SA
Text: OM6009SA OM6011SA OM6109SA OM6111SA OM601 OSA QM6012SA OM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES • Isolated Hermetic Metal Package
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OM6009SA
OM6011SA
OM6109SA
OM6111SA
OM601
QM6012SA
OM6110SA
OM6112SA
O-254AA
MIL-S-19500,
lateral mosfet audio amplifier
OM6112SA
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PDF
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s5288
Abstract: 417S
Text: T em ic DG421/423/425 S e m i c o n d u c t o r s Low-Power, High-Speed, Latchable CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • Latched Control Inputs Rail-to-Rail Analog Input Range
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DG421/423/425
DG421/423/425
S-52880--Rev.
28-Apr-97
s5288
417S
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PDF
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JAN-38510
Abstract: DG184BP
Text: DG183/184/185 Vishay Siliconix High-Speed Drivers and Dual DPST JFET Switches FEATURES BENEFITS APPLICATIONS • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Break-Before-Make Switching • Rad Hardness • • •
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DG183/184/185
DG183/184/185
DG183
DG184
DG185
S-52895--Rev.
16-Jun-97
JAN-38510
DG184BP
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PDF
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