NFM61R
Abstract: VDE0872 VDE0875N NFM41R 595D CDR105B CDR74B ML4861 NFM40R on board DC RFI suppression filters
Text: June 1996 Application Note 42007 Safety, EMI and RFI Considerations by Daryl Sugasawara and Jens Paetau INTRODUCTION The filtering of conducted and radiated noise is an intricate part of the design of a power supply or DC to DC converter. This Application Note addresses the origin of
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CR30FT
Abstract: TO208AC 50RIF10W15 AEG T 290 CR30FT01
Text: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 T13F100UCL T13F100UCM T13N100COB T13N100COC T13N100COF T13N100HOB T13N100HOC T13N100HOF T13N100UOB T13N100UOC 20 30 35 40 50 60 70 75 80 90 95 dv/dt V (A) (V/us) Aktien Aktien Aktien Aktien Aktien
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T13F100UCL
T13F100UCM
T13N100COB
T13N100COC
T13N100COF
T13N100HOB
T13N100HOC
T13N100HOF
T13N100UOB
T13N100UOC
CR30FT
TO208AC
50RIF10W15
AEG T 290
CR30FT01
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1.5KE transil diode
Abstract: RECTIFIER DIODES SGS AP6KE transil diode equivalent transils 1.5ke transil DIODE RECTIFIER BRIDGE SINGLE CB417 origin diode rectifier diode
Text: APPLICATION NOTE USE OF TRANSILS AS RECTIFIER DIODES Transils are diodes especially designed to dissipate high peak power in avalanche operation. In direct conduction they have the properties of very good conventional diodes with the possibility of handling very high surge
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CB-417
1.5KE transil diode
RECTIFIER DIODES SGS
AP6KE
transil diode equivalent
transils
1.5ke transil
DIODE RECTIFIER BRIDGE SINGLE
CB417
origin diode
rectifier diode
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AP6KE
Abstract: 1.5KE transil diode transils 1N5635A diode 1.5ke CB417 of bridge rectifier 1N5665A transil diode equivalent 1.5ke transil
Text: AN586 APPLICATION NOTE USE OF TRANSILS AS RECTIFIER DIODES INTRODUCTION Transils are diodes especially designed to dissipate high peak power in avalanche operation. In direct conduction they have the properties of very good conventional diodes with the possibility of handling very
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AN586
AP6KE
1.5KE transil diode
transils
1N5635A
diode 1.5ke
CB417
of bridge rectifier
1N5665A
transil diode equivalent
1.5ke transil
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Untitled
Abstract: No abstract text available
Text: BYV52HR Aerospace 30 A - 200 V fast recovery rectifier Datasheet - production data Features • Very small conduction losses • Negligible switching losses • High surge current capability • High avalanche energy capability • Hermetic package • Target radiation qualification:
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BYV52HR
O-254
O-254
BYV52-200FSY1
BYV52-200FSYHRB
DocID17395
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Untitled
Abstract: No abstract text available
Text: BYV54HR Aerospace 40 A - 200 V fast recovery rectifier Datasheet - production data Features • Very small conduction losses • Negligible switching losses • High surge current capability • High avalanche energy capability • Hermetic package • Target radiation qualification:
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BYV54HR
O-254AA
BYV54S200FSY1
BYV54S200FSYHRB
O-254AA,
DocID17416
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Untitled
Abstract: No abstract text available
Text: STPS40100HR Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Features • Forward current: 2 x 20 A • Repetitive peak voltage: 100 V • Low forward voltage drop: 0.9 V • Maximum junction temperature: 175 °C • Negligible switching losses
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STPS40100HR
O-254
ESCC5000
DocID17306
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sumida 94V-0
Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Text: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.
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IRFK2D054
IRFK2F054
CPV362M4U
CPV363M4U
CPV364M4U
CPV362M4F
CPV363M4F
CPV364M4F
CPV362M4K
CPV363M4K
sumida 94V-0
inverter using irfz44n
MOSFET IRF9430
IRF7414
irfp460 dc welding circuit diagram
IRFP264 inverter circuits
IRFP450 inverter
Three phase inverter using irfp450 mosfet Diagram
Sumida ul94v-0 inverter
IRF 544 N MOSFET
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1N5806U02A
Abstract: No abstract text available
Text: 1N5806U Aerospace 2.5 A fast recovery rectifier Datasheet - production data Description A This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2A
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1N5806U
ESCC5000
1N5806U
DocID15986
1N5806U02A
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Untitled
Abstract: No abstract text available
Text: 1N6642U Aerospace 0.3 A - 100 V switching diode Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2D
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1N6642U
ESCC5000
1N6642U
DocID16972
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Untitled
Abstract: No abstract text available
Text: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is
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STPS6045HR
ESCC5000
O-254
STPS6045HR
STPS6045CFSY1
STPS60
DocID18184
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1N5822U
Abstract: No abstract text available
Text: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B
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1N5822U
ESCC5000
1N5822U
DocID16007
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Untitled
Abstract: No abstract text available
Text: 1N5819U Aerospace 45 V power Schottky rectifier Datasheet - production data Description K A This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B
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1N5819U
ESCC5000
1N5819U
DocID16006
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Untitled
Abstract: No abstract text available
Text: 1N5811U Aerospace 6 A fast recovery rectifier Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B
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1N5811U
ESCC5000
1N5811U
DocID16005
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HEXFET Power MOSFET designer manual
Abstract: MOSFET designer manual BJT Gate Drive circuit POWER BJTs BJT with i-v characteristics BJT characteristics N-Channel jfet 200V depletion P-Channel Depletion Mosfet HEXFET Power MOSFET Designers Manual n channel silicon mosfet
Text: Index Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs employ semiconductor processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current levels are significantly different
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STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate
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STPS20100HR
O-254
ESCC5000
STPS20100HR
DocID16953
STMicroelectronics smd marking code
st smd diode marking code
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STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other
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BYW81HR
O-254
O-254
BYW81-200CFSY1
DocID17735
STMicroelectronics smd marking code
st smd diode marking code
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"Power Semiconductor Applications" Philips
Abstract: No abstract text available
Text: Philips Semiconductors Power Diodes Back diffused rectifier diodes A single-diffused P-N diode with a two layer structure cannot combine a high forward current density with a high reverse blocking voltage. A way out of this dilemma is provided by the three layer
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AN-1084
Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5
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AN-1084
AN-1084
Power MOSFET Basics
HEXFET Power MOSFET designer manual
HEXFET Power MOSFET Designers Manual
BJT with i-v characteristics
MOSFET designer manual
N-Channel jfet 100V depletion
N-Channel jfet 500V depletion
n channel depletion MOSFET
AN10841
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B250C2300
Abstract: B250C1500a B40C2300-1500A B250C-1500A
Text: B.C2300-1500A/B B.C2300-1500A/B Silicon-Bridge-Rectifiers Silizium-Brückengleichrichter Version 2006-07-12 19 3.5 x 0.25 x 1.2 8.7 = = x x 0.8 5 5 5 Dimensions - Maße [mm] 1 10 Type Typ Nominal current Nennstrom 2.3 / 1.5 A Alternating input voltage
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C2300-1500A/B
UL94V-0
B250C1500A"
B250C1500A
B250C1500A
B250C23001500A
b40c2300
21-May-2010
B250C2300
B40C2300-1500A
B250C-1500A
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uc 600
Abstract: R500 resistor AL203 R020 R050 R500 R750 UL-94V0 pwr221t PWR221T-30
Text: PL IA NT CO M *R oH S 13 % 2 25R0 1 8 01 2 A ST A RIC CO Features Applications • TO-220 housing ■ Power supplies ■ Low inductance ■ Motor drives ■ Ceramic backplane ■ Test and measurement ■ High power rating ■ Rectifiers ■ RoHS compliant*
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O-220
PWR221T-30
Rating00
uc 600
R500 resistor
AL203
R020
R050
R500
R750
UL-94V0
pwr221t
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3DU41
Abstract: D0-201AD c05w origin semiconductor rectifier
Text: TOSHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V r r m = 2 00 V AV = 3-0a trr= 100ns (MAX.)
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3DU41
100ns
D0-201AD
3DU41
D0-201AD
c05w
origin semiconductor rectifier
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 3DU41 TOSHIBA DUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3DU41 SWITCHING TYPE POWER SUPPLY APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Very Fast Reverse-Reeovery Time V rrm = 200V AV = 3-o a trr= 100ns (MAX.)
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3DU41
100ns
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TOSHIBA RECTIFIER
Abstract: 3LZ41 3DZ41 D0-201AD origin semiconductor rectifier aO63
Text: T O S H IB A 3DZ41,3LZ41 T O SH IBA RECTIFIER SILICON DIFFUSED TYPE 3DZ41, 3LZ41 Unit in mm G ENERAL PURPOSE RECTIFIER APPLICATIO NS • • • Average Forward Current : Ijr AV = 3.0A Repetitive Peak Reverse Voltage : V r r m = 200, 800V Peak One Cycle Surge Forward Current (Non Repetitive)
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3DZ41
3LZ41
3DZ41,
D0-201AD
18SOLDER
10x10mm
30X30mm
TOSHIBA RECTIFIER
3LZ41
D0-201AD
origin semiconductor rectifier
aO63
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