Untitled
Abstract: No abstract text available
Text: STPS40100HR Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Features • Forward current: 2 x 20 A • Repetitive peak voltage: 100 V • Low forward voltage drop: 0.9 V • Maximum junction temperature: 175 °C • Negligible switching losses
|
Original
|
STPS40100HR
O-254
ESCC5000
DocID17306
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is
|
Original
|
STPS6045HR
ESCC5000
O-254
STPS6045HR
STPS6045CFSY1
STPS60
DocID18184
|
PDF
|
1N5822U
Abstract: No abstract text available
Text: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B
|
Original
|
1N5822U
ESCC5000
1N5822U
DocID16007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5819U Aerospace 45 V power Schottky rectifier Datasheet - production data Description K A This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B
|
Original
|
1N5819U
ESCC5000
1N5819U
DocID16006
|
PDF
|
STMicroelectronics smd marking code
Abstract: st smd diode marking code
Text: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate
|
Original
|
STPS20100HR
O-254
ESCC5000
STPS20100HR
DocID16953
STMicroelectronics smd marking code
st smd diode marking code
|
PDF
|
FS1J3
Abstract: origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 B130LAW toshiba smd diode toshiba diode 1A
Text: New Product Announcement August 2002 Compact, High-efficiency SOD-123: B130LAW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D 1.35 E 0.55 Typical G 0.25 H 0.15 Typical
|
Original
|
OD-123:
B130LAW!
OD-123
OD-123
380mV
B130LAW
EP10QY03;
470mV
420mV
CRS01;
FS1J3
origin diode
Schottky Diode 30V 1A SOD123
toshiba battery charger
Power DIODES, toshiba
Nihon EP10QY03
d1651
toshiba smd diode
toshiba diode 1A
|
PDF
|
YA878C15
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C15R 150V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C15 YA878C15
|
Original
|
YA878C15R
O-220AB
YA878C15
YA878C15
|
PDF
|
diode 100v 10a
Abstract: No abstract text available
Text: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications
|
Original
|
YG872C10R
O-220F
diode 100v 10a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA872C15R 150V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C15 YA872C15
|
Original
|
YA872C15R
O-220AB
YA872C15
|
PDF
|
YA872C10R
Abstract: diode 100v 10a
Text: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10
|
Original
|
YA872C10R
O-220AB
YA872C10
YA872C10R
diode 100v 10a
|
PDF
|
Catalog diode
Abstract: YG875C10
Text: http://www.fujisemi.com YG875C10R 100V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C10 YG875C10
|
Original
|
YG875C10R
O-220F
YG875C10
Catalog diode
YG875C10
|
PDF
|
YG878C10
Abstract: No abstract text available
Text: http://www.fujisemi.com YG878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C10 YG878C10
|
Original
|
YG878C10R
O-220F
YG878C10
YG878C10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C12 YA878C12
|
Original
|
YA878C12R
O-220AB
YA878C12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA872C12R 120V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C12 YA872C12
|
Original
|
YA872C12R
O-220AB
YA872C12
|
PDF
|
|
|
ORIGIN ELECTRIC CATALOG
Abstract: YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
Text: http://www.fujisemi.com YA878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C20 YA878C20
|
Original
|
YA878C20R
O-220AB
YA878C20
ORIGIN ELECTRIC CATALOG
YA878C20R
Catalog diode
diode Catalog
diode 200v 30a
PUT catalog
200v 30A schottky
fuji electric mark
|
PDF
|
YG875C15R
Abstract: No abstract text available
Text: http://www.fujisemi.com YG875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C15 YG875C15
|
Original
|
YG875C15R
O-220F
YG875C15
YG875C15R
|
PDF
|
Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C15 YA875C15
|
Original
|
YA875C15R
O-220AB
YA875C15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C12 YG878C12
|
Original
|
YG878C12R
O-220F
YG878C12
|
PDF
|
Catalog diode
Abstract: No abstract text available
Text: http://www.fujisemi.com YA875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C20 YA875C20
|
Original
|
YA875C20R
O-220AB
YA875C20
Catalog diode
|
PDF
|
YG875C20R
Abstract: YG875C20
Text: http://www.fujisemi.com YG875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C20 YG875C20
|
Original
|
YG875C20R
O-220F
YG875C20
YG875C20R
YG875C20
|
PDF
|
fuji
Abstract: No abstract text available
Text: http://www.fujisemi.com YA878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C10 YA878C10
|
Original
|
YA878C10R
O-220AB
YA878C10
fuji
|
PDF
|
F1N4
Abstract: F1H6 F1N2 F1P2 F1H4 F1H2
Text: S U R F A C E MOUNTING D E V IC E S a PK»PP g fM "J 1. V ario u s kinds. R ectifying diodes, schottky b arrier diodes, surge clam p ers, etc. 2. Sm all size. 3. T a p in g c ap a b le o f high density m ounting. W 'S l '. KICfflo A PPLICATIONS ¥ iiJ m m ? )!
|
OCR Scan
|
|
PDF
|
F1N4
Abstract: zd tn
Text: S U R F A C E M O U N TIN G D E V IC E S n pp y •<71- — >' Kv 2 . 'MSBSJfc ♦ 3 1 S T % • I . 'W =1 -> a >y-— FEATUR ES 1. V ario u s kinds. R ectifying diodes, schottky b arrier diodes, surge clam p ers, etc.) 2. Sm all size. 3. T ap in g cap a b le o f high density m ounting.
|
OCR Scan
|
Tstg50
F1N4
zd tn
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s
|
OCR Scan
|
60GHz)
30dBm
100ohm
10MHz
|
PDF
|
