Untitled
Abstract: No abstract text available
Text: Series 101 by Mel Clark & Kent Walters, Microsemi Scottsdale A Primer on Transient Voltages.and their effects on microchips Origin of Transient Voltages Lightning, inductive load switching, and electrostatic discharge ESD are the most common sources of
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200kA.
8/20us
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BAR66
Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Text: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode
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Thyristor 10kV
Abstract: static induction Thyristor 10kv transformer "static induction thyristor"
Text: MicroNOTE #101 by: A Primer On Transient Voltages And Their Effects On Microchips Origin of Transient Voltages Lighting, inductive load switching, and electrostatic discharge ESD are the most common sources of electrical overstress which produce transient voltages. Transients are narrow
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200kA.
8/20us
Thyristor 10kV
static induction Thyristor
10kv transformer
"static induction thyristor"
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A7KV
Abstract: Lightning protection
Text: MicroNOTE #101 by: A Primer On Transient Voltages And Their Effects On Microchips Origin of Transient Voltages Lightning, inductive load switching, and electrostatic discharge ESD are the most common sources of electrical overstress which produce transient voltages. Transients are narrow
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8/20us
A7KV
Lightning protection
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Untitled
Abstract: No abstract text available
Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing
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M2408N
SM02-06CXC504
M1825NC020-060
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6000A 16 1
Abstract: m2408n
Text: EVALUATION LABORATORY Rating Report - Issue 2 Date - 23 July, 2004 Origin - PAR 985 Total Pages - 13 Fast Recovery Diode Types M2408N#020 to M2408N#060 Old Type No.: SM02-06CXC504 Author EL Check/Approval QA Approval S & M Approval N. A. Tarling Abstract The M2408N#020-060 fast recovery diode consists of a 50mm diameter silicon slice manufacturing
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M2408N
SM02-06CXC504
M1825NC020-060
6000A 16 1
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NFM61R
Abstract: VDE0872 VDE0875N NFM41R 595D CDR105B CDR74B ML4861 NFM40R on board DC RFI suppression filters
Text: June 1996 Application Note 42007 Safety, EMI and RFI Considerations by Daryl Sugasawara and Jens Paetau INTRODUCTION The filtering of conducted and radiated noise is an intricate part of the design of a power supply or DC to DC converter. This Application Note addresses the origin of
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94-3252
Abstract: 28548 R295CH40
Text: EVALUATION LABORATORY - Issue 1 Date Origin - PAR 327 Total Pages Provisional Data - 30 August, 2000 Rating Report - 15 Distributed Gate Thyristor Types R295CH36 to R295CH40 Author Checked N. Tarling Abstract Approved The R295CH36-40 Distributed Gate thyristor range features regenerative and interdigitated gating on a
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R295CH36-40
R295CH36
R295CH40
94-3252
28548
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Ho56
Abstract: 50kV MD-50X1 312 ho
Text: #50kV^ SILICON HIGH VOLTAGE RECTIFYING DIODES MD-50X1 = ORIGIN ELECTRIC CO LTD • 4t * I • '} '& = > > ; • ? V X \ &>■$>— $> -y 2. • fflü I . v — 5ÖE T> i\ ■ • • • £ * & (Ta = 2 5 ic, » + Characteristics(Ta = 25TC in oil, unless otherwise specified)
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MD-50X1
bfil30
000005b
MD-50X1
50HzjE
100mA
MD-50X1IÃ
20ms-
Ho56
50kV
312 ho
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IH-001
Abstract: Scans-00137690 MGD-13N2 13kv Origin Electric
Text: SILICON HIGH VOLTAGE R EC TIFYIN G DIODES MGD-13N2 SÔE ORIGIN ELECTRIC CO LTD •mm æ • 13kV • 200mA i . 2. • ^ T a = 25°C !2fc I0RIJ FEATURES y~ . 1. The terminal insulated to the base. ~~(s t 2. Wide range and high junction temperature. APPLICATIONS
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200mA
l3074
MGD-13N2
IH-001
Scans-00137690
MGD-13N2
13kv
Origin Electric
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LU-12 relay
Abstract: PED relay
Text: Functional Description Figure 1 shows the switch characteristics of the relays. The relay exhibits an ON-resistance that is exception ally linear through the origin and up to the knee current /« . Beyond / K, the incremental resistance decreases, minimizing internal power dissipation. Overload cur
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1-888-Infineon
LH1525AT/AAB/AABTR
LU-12 relay
PED relay
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PED relay
Abstract: No abstract text available
Text: Functional Description Figure 1 shows the switch characteristics of the relays. The relay exhibits an ON-resistance that is exception ally linear through the origin and up to the knee current /« . Beyond / K, the incremental resistance decreases, minimizing internal power dissipation. Overload cur
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1-888-lnfineon
1540AT/AAB/AABTR
PED relay
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IL5G
Abstract: No abstract text available
Text: SILICON FAST RECOVERY RECTIFYING DIODES räjai '& ORIGIN ELECTRIC CO LTD • # Ä • 2.5A 7 - f > t t • trr^0.8jus b ö l 3 0 7 4 ÜG0ÜD3Ö 452 • I ORI J. FEATURES 1. Io = 2.5A (with fin). 2. Low noise, soft recovery type. SM- 3 - r ■ ' I . ¥ ± S lS > 7 fE ;S *{ *
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b613074
-02FR
-04FR
-06FR
50HzjE3Â
-25MIN-
UL94V-O)
IL5G
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1S1934
Abstract: 1S1935 1S1936 1S1937 1S1938 1S1939 S-20 icr 301 MI15
Text: ORIGIN ELECTRIC CO LTD SfiE J> • bfll3D7M OGGGDST HIT ■ ORI J SILICON RECTIFYING DIODES S-20 _r i • - tt! • 20A 7-f >fi\ g;$ " . - s • ? • > ? -> - 2 . • fflìÈ 1 0 0 V - 1 0 0 0 V 6 t i FEATURES 1. H igh re lia b ility , h erm etic se aled type.
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00V-1000V
1S1934
1S1935
1S1936
1S1937
1S1938
1S1939
50HzjE&
W12E1
OF-301
1S1939
S-20
icr 301
MI15
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origin diode
Abstract: MD-36N4 A1sm
Text: SILICO N HIGH VO LTA G E R E C TIFY IN G DIODE MD- 3 6 N4 • |J - ORIGIN ELECTRIC CO LT» • S S 5ÖE D 3gJS äft*<*#L'o 400mA o 2. • 2. K I 6 * - r 7° bôl3074 QQaQGS3 73T • I. FEATURES 1. Axial lead type. 2. Io = 400 mA. I0RIJ /~0 t-O J APPLICATIONS
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MD-36N4
25TCa+
400mA(
l3074
50HzjE3Â
400mA
origin diode
MD-36N4
A1sm
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MD-8H10
Abstract: MD-8N10 8H10 AS105
Text: SILIC O N HIGH VO LTA G E R E C T IF Y IN G DIODES 8 MD- 8 N H 10 ORIGIN ELECTRIC CO I . /< .y 2 . LTD SÔE D I bûl3 0 7 4 -f0 (70a ) (T a = 2 5 -C ) s te-f- Electrical characteristics Absolute maximum ratings Ite m s -fr X. Symbols U nit m Æ« m se
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bfiiao74
50HzIE3Â
50HzIE5Â
MD-8H10
t-20ms*
MD-8H10
MD-8N10
8H10
AS105
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OS13-0650-04
Abstract: IEC60825-1 MAG45 marking code SAC TYCO electronics marking code date 6605704-1 diode os13
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST AA 22 R E VIS IO N S LTR DESCRIPTION A ECHANICAL: A 1-6610034-1 D TT YYWW ORIGIN Mag45tm us A A A REV PER EC OS13 - 0 6 5 0 - 0 4
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OS13-0650-04
6MAR2005
C26800
16MAR2005
MAG45
IEC60825-1
marking code SAC
TYCO electronics marking code date
6605704-1
diode os13
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1307H
Abstract: No abstract text available
Text: :i5fE ORIGIN ELECTRIC CO SILICON F A S T R E C O V E R Y RECTIFYING DIODES • 200V ~ 800V SM- • 2 . 5 A 7>f LTD 1. SÔE D I . x -f - j.f 2. > m m tt z o n r n jF R LÖ1307H *•' (2 .5 A . 2 . ' / 7 1 - i J A a ' I J - H -f x - ; -i • Æ fê . r 422
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1307H
-02FR
-04FR
-06FR
UL94V-0)
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HIGH VOLTAGE DIODE kv
Abstract: MZ-10HV MZ-10HTE1 MZ-13HTE1 MZ-4HV
Text: I5J S IL IC O N H IG H V O L T A G E Œ 7 x -Η ORIGIN • M Z -r ELECTRIC CO LTD SflE » . • /£*& Ta = 2 5 r , m * fi -s m a VP T ype I E # * b ö l3 Q 7 4 □ □ 00072 b^D I0RIJ FEATURES 1. High voltage zener diode (up to 10 kV . 2. Low differential resistance o f avalanche breakdow n area.
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l3Q74
MZ-10HV
MZ-10HTE1
MZ-13HTE1
MZ-10HTE1,
MZ-13HTEl
HIGH VOLTAGE DIODE kv
MZ-13HTE1
MZ-4HV
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MD-125N08C
Abstract: "x-ray generator"
Text: raJ±î=E5iE ORIGIN l . 'J 'I ! k S IL IC O N H IG H V O L T A G E R E C T IF Y IN G D IO D E S MD- 100X08C> MD-125N08C ELECTRIC 3 CO LT]> SflE D • h 'fb itL T L 'S « , 2 . M EL-? — i.'0 • 2. * 7>'fe£7 J±#gifcJ30 • • lOOkV, FEATURES 1. Compact size high voltage diodes.
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100X08C>
MD-125N08C
125kV
100X08C
125N08C
50HzIESÂ
I-100
100mA
MD-125N08C
"x-ray generator"
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Untitled
Abstract: No abstract text available
Text: SILIC O N HIGH VO LT A G E R EC T IFY IN G DIODES MD-12N H 10 • i a SflE J> m ORIGIN ELECTRIC CO LT» • Ît f i: I . • 12kV è < 7 ' < =7 L X ^ 2 . •E û t i (H ^ -ry ) . < n m m „ 2. C02U-• Æ fê (T a = 2 5 t ) C h a ra c te ristic s(T a = 2 5 °C ,
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37MAX'
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2831A
Abstract: 1S2827A 1S2828A 1S2830A SM15 1S282
Text: -m •íjfE • ffliÉ • 200V -1000V SM-1.5 ORIGIN ELECTRIC CO LTD 1. SflE T> . r • 1.5A □013074 O O G Ü O E b 70Ü « 0 R I J W Ë • t 0 I . OA • • APPLICATIONS 1. OA, FA equipments. TféíiType m it Symbols Unit ¡» s» « $ fil} >f » 3 $
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00V-1000V
000002b
1S2827A
1S2828A
1S2830A
-25MIN-
UL94V-0
2831A
SM15
1S282
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Origin Electric
Abstract: H125 MD10N1 MD15N1 MD20N1
Text: SILICON HIGH VOLTAGE RECTIFYING DIODES J ± îl5 iE = M D r ORIGIN ELECTRIC CO LTD j N SöE D • 3 kV~20kV • 2 0 m A ~ 8 0 m A 5i4l 1 '> > J - X ' I I b613074 00000S0 T5T • O R I J -FEATURES 1. L ow re v e r s e curren t. 2. E x c e lle n t avalanche c h a r a c te r is t ic s .
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bfil3074
MD10N1
MD15N1
MD20N1
50/60Hz,
Origin Electric
H125
MD20N1
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A6062S-T5
Abstract: 1S1033 diodes ir mais 1S1034 1S1035 1S1036 1S1037 1S1038
Text: ijjft S-200 i ORIGIN ELECTRIC CO LTD ►f f l ü É •£ *§ 1 . m i n s a f f l o 2 . iE Í J l- iL f f lo T ^ a t - a J S ILIC O N RECTIFYING DIODES . . r SflE D L . B 1 3 0 7 H 0 0 0 0 0 3 4 • 2 0 0 V - 1 0 0 0 V • 2 0 0 A f l f l ? • • FEATURES
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S-200
B1307H
00V-1000V
1S1033
1S1034
1S1035
1S1036
1S1037
1S1038
A6062S-T5
diodes ir
mais
1S1038
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