Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB120 FLAT-BASE TYPE INSULATED PACKAGE FEATURE PM75RLB120 a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75RLB120
|
PDF
|
E80276
Abstract: PM150RLA120 optocoupler PC 187
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
|
Original
|
PM150RLA120
E80276
PM150RLA120
optocoupler PC 187
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM25RLA120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75RLA120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM50RLB120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM100RLA060
|
PDF
|
optocoupler PC 187
Abstract: E80276 PM100RLA120 mitsubishi 7805 7805 wn
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C
|
Original
|
PM100RLA120
optocoupler PC 187
E80276
PM100RLA120
mitsubishi 7805
7805 wn
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM25RLB120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM200RLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM50RLB060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75RLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75RLB060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM150RLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM50RLA060
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM25CLA120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM300RLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75CLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM300CLA060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM50CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM50CLB120
|
PDF
|
MITSUBISHI INTELLIGENT POWER MODULES
Abstract: E80276 PM50CLA120 capacitor 0.1u optocoupler fast
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM50CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM50CLA120
MITSUBISHI INTELLIGENT POWER MODULES
E80276
PM50CLA120
capacitor 0.1u
optocoupler fast
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM75CLB060
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM600CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM600CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C
|
Original
|
PM600CLA060
45kW/55kW
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of
|
Original
|
PM25CLB120
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C
|
Original
|
PM150CLA060
|
PDF
|
