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    OPTICAL DETECTORS 500 NM Search Results

    OPTICAL DETECTORS 500 NM Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    OPTICAL DETECTORS 500 NM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    edfa pump laser

    Abstract: No abstract text available
    Text: SD 048-11-21-000 Pump Laser Monitor Photodiode The SD 0480-11-21-000 Pump Laser Monitor Photodiode was designed to monitor the optical power of short wavelength 500 to 1000 nm semiconductor lasers, such as the 980 nm EDFA pump laser. These OEM detectors are supplied as bare die soldered to a ceramic block, which facilitates


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    A New Detector for IR LED Light

    Abstract: Silicon Detector OSD5-5T GaAlAs detector IR photodiode 880 nm 850 nm LED RG830 Longwave laser ingaas LED IR photodiode 95w
    Text: A NEW DETECTOR FOR IRLED LIGHT As reprinted from SENSORS Magazine, December 1996 Issue A New Detector for IR LED Light A new GaAIAs processing technique has led to a wavelength-specific detector for 880 nm light that requires no signal modulation or optical filtering to eliminate


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    HSDL-4400

    Abstract: HSDL-4420 HSDL-54XX 9018E HSDL4420 HSDL-44XX HSDL-5400 HSDL-5420 54XX
    Text: H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44XX HSDL-54XX HSDL-4400 HSDL-5400. HSDL-5420. EN60825-1. I-008, I-009, I-015 HSDL-4420 9018E HSDL4420 HSDL-5400 HSDL-5420 54XX

    HSDL-4420#011

    Abstract: No abstract text available
    Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44xx HSDL-54xx HSDL-4400 HSDL-5420. EN60825-1. I-008 5968-0955E 5968-5115E HSDL-4420#011

    9018E

    Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5400 HSDL-5420 HSDL-54XX Hewlett-Packard LED transparent substrate 1996
    Text: 1 H High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44XX IR Emitter Series HSDL-54XX IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44XX HSDL-54XX HSDL-4400 EN60825-1. I-008 5964-9018E 9018E EN60825-1 HSDL4420 HSDL-4420 HSDL-5400 HSDL-5420 Hewlett-Packard LED transparent substrate 1996

    HSDL4420

    Abstract: HSDL-4400 HSDL-4420
    Text: 1 High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44xx HSDL-54xx HSDL-4400 HSDL-5400 HSDL-5420. EN60825-1. I-008 5968-0955E 5968-5115E HSDL4420 HSDL-4420

    InGaAs APD photodiode 1550

    Abstract: InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin
    Text: PDINBU 45 UM DETECTORS 1100nm to 1650 nm InGaAs PIN Photodiodes PDINBU045G00A-0-0-01 PD-LD offers InGaAs PIN photodiodes with a 45 micron diameter active area that are ideal for use in Channel Monitoring Applications. The detectors exhibit their intrinsically high optical responsivity


    Original     		PDF 1100nm PDINBU045G00A-0-0-01 InGaAs APD photodiode 1550 InGaas PIN photodiode, 1550 inGaAs photodiode 1550 InGaAs apd photodiode InGaAs pin

    HSDL-44XX

    Abstract: 44xx
    Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44xx HSDL-54xx HSDL-4400 HSDL-5400 HSDL-5420. 5980-2417E 5988-2425EN 44xx

    HSDL-5400

    Abstract: HSDL5420 HSDL-5420 HSDL5400
    Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44xx HSDL-54xx HSDL-4400 HSDL-5400 HSDL-5420. 5968-5115E 5980-2417E HSDL5420 HSDL-5420 HSDL5400

    HSDL-5400

    Abstract: EN60825-1 HSDL-4400 HSDL4420 HSDL-4420 HSDL-44XX HSDL-5420 diode blue stripe
    Text: High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package HSDL-44xx IR Emitter Series HSDL-54xx IR Detector Series Technical Data Features Description • Subminiature Flat Top and Dome Package Size – 2x2 mm • IR Emitter 875 nm TS AlGaAs


    Original     		PDF HSDL-44xx HSDL-54xx HSDL-4400 5988-2425EN 5988-5284EN HSDL-5400 EN60825-1 HSDL4420 HSDL-4420 HSDL-5420 diode blue stripe

    BaySpec

    Abstract: wdm Mux edfa optical gain 20 dB 2X512
    Text: Enlightening Fiber Optic Networks IntelliGuardTM C and L-Band Optical Channel Performance Monitors Parameters Unit Specifications nm 1528 - 1570 C-Band and 1570 - 1605 (L-Band) GHz 160 50 pm dB ± 15 60 Channel Input Power Range Channel Power Accuracy Channel Power Repeatability


    Original     		PDF 2x512-element BaySpec wdm Mux edfa optical gain 20 dB 2X512

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with


    Original     		PDF C30902 C30921 C30902SH C30921SH C30902EH/SH-2 C30902BH C30902EH

    SAE230VS

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAE-Series Red-Enhanced Description The SAE230VS and SAE500VS epitaxial avalanche photodiodes are general purpose APD with high responsivity and extremely fast rise and fall times through out the 400 to 1000 nm wavelength range. The peak responsivity at 650 nm is ideally suited to


    Original     		PDF SAE230VS SAE500VS

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAE-Series NIR-Enhanced Description The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range. The responsivity is optimised for 900 nm for use


    Original     		PDF SAE230NS SAE500NS

    PIN-5DI

    Abstract: PIN-020A PIN-3CDI UDT Pin-040A PIN-10DI PIN-6DI PIN-13DI FIL-3C diodes 10di 13DI
    Text: PHOTOCONDUCTIVE SERIES PLANAR DIFFUSED SILICON PHOTODIODES APPLICATIONS • • • • • • The Photoconductive Detector Series are suitable for high speed and high sensitivity applications. The spectral range extends from 350 to 1100 nm, making these photodiodes ideal for visible and near IR applications, including such


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    SF107

    Abstract: No abstract text available
    Text: Opto Products Semelab Opto-Electronic Components, Modules and Solutions OPTO CHIP DESIGN WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end, innovative electronic solutions since 1974. A diverse, worldwide customer base benefits from our design innovation, our


    Original     		PDF FM36235 M1040 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 A1006 SF107

    gold detectors circuit

    Abstract: PDF PIN PHOTO DIODE DESCRIPTION detector alcohol OP58TS The Optical Devices
    Text: Spec. No. : ODT-W010-82 0 Issued Date : 2004.09.20 SPECIFICATION MODEL NAME : Photo Diode MODEL NO. : OP58TS Prepared by : Checked by : Approved by : ODTech Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624


    Original     		PDF ODT-W010-82 OP58TS OP58TS gold detectors circuit PDF PIN PHOTO DIODE DESCRIPTION detector alcohol The Optical Devices

    EPITAXX

    Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
    Text: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


    OCR Scan     		PDF 2000T5, 3000T5 500nm, 1000p 33b0MDb EPITAXX EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550

    ETX2000T5

    Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
    Text: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical


    OCR Scan     		PDF 1000T 2000T5, 3000T5 33bOMDb 0DD0375 ETX2000T5 ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx

    J16D

    Abstract: J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM
    Text: E G I 8c G JUDSON 3TE D • 30BGb05 000DE13 4 *JUD ^ T -V /-V / J IO Series Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


    OCR Scan     		PDF 30BGb05 000DE13 J16TE2 11-mission. 3030L 000D21L, J16D J161 germanium diode equivalent GE PHOTODIODE J16-18A-R01M-HS J16-5SP-R03M-HS 103 SRM

    J16-5SP-R02M-SC

    Abstract: J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M
    Text: E G 8c G JUDSON BTE J> J 16 Series 3CI30bD5 D0DDS13 JUD 4 T - H t - H l Germanium Detector Operating Notes General Responsivity Operating Circuit J16 Series detectors are high-quality Germanium photodiodes designed for the 800 to 1800 nm wavelength range.


    OCR Scan     		PDF 3CI30bD5 D0DDS13 J16TE2 1550nm. 3G30L 000021L. J16-5SP-R02M-SC J16-8SP-R05M GE PHOTODIODE J16-18A-R01M-SC J16P1R10M J16-5SP-R03M-HS J16-5SP-R03M-SC judson germanium photodiode J16-8SP-R05M-SC J16-18A-R01M

    SDL-4420

    Abstract: No abstract text available
    Text: Thp\ mHEM HEWLETT PACKARD High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package Technical Data Features • Subm iniature Flat Top and D om e Package Size - 2x2 iran • IR E m itter 875 nm TS AIGaAs Intensity -1 7 mW/sr Speed - 40 ns


    OCR Scan     		PDF HSDL-44xx HSDL-54xx HSDL-4400 EN60825-1. 5968-0955E 5968-5115E SDL-4420

    bpx65rt

    Abstract: centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF X65EB blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode
    Text: RESPO N SIVITY A/W Photodiode Response Curves 200 300 400 500 600 700 800 900 1000 1100 1200 W AVELENG TH(nm ) CEnmomc ] 2 Tel: 01689 842121 Fax: 01689 845117 Making the Right Choice (•■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■■a


    OCR Scan     		PDF 900nm BPX65 AX65R2F BPX65RT X65EB centronic osd100 6 deep uv photodiode, GaP Centronic osd 15 AX65-RF blue enhanced photodiode array MD25 Silicon Photodetector Centronic osd 50 1064nm photodiode

    ON SEMICONDUCTOR 613

    Abstract: top marking 293 1A466
    Text: PRODUCT INFORMATION 1A466 Datacom, General Purpose O p t ic a l a n d E le c t r ic a l C h a r a c t e r is t ic s 500 /p=30mA Note 1 700 |j W 50 deg (3 d B e l) /c 200 MHz Peak Wavelength XP 640 650 660 II o nm II Bandwidth Full W idth H alf M axim um I


    OCR Scan     		PDF 1A466 30mAte 1-800-96MITEL ON SEMICONDUCTOR 613 top marking 293 1A466