laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
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ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
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HL6323MG
Abstract: opnext hl6323mg
Text: HL6323MG ODE-208-029 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
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HL6323MG
ODE-208-029
HL6323MG
HL6323MG:
opnext hl6323mg
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Untitled
Abstract: No abstract text available
Text: HL6323MG ODE-208-029A Z Rev.1 Feb. 01, 2008 AlGaInP Laser Diodes Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
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HL6323MG
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HL6323MG
HL6323MG:
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Abstract: No abstract text available
Text: HL6323MG ODE2013-00 M Rev.0 Aug. 01, 2008 AlGaInP Laser Diodes Description The HL6323MG is a 0.63 m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
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HL6323MG
HL6323MG
ODE2013-00
HL6323MG:
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Abstract: No abstract text available
Text: HL6323MG ODE-208-029 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
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HL6323MG
HL6323MG
ODE-208-029
HL6323MG:
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HL6323MG
Abstract: c3040
Text: HL6323MG ODE-208-029 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The
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HL6323MG
ODE-208-029
HL6323MG
HL6323MG:
c3040
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Untitled
Abstract: No abstract text available
Text: HL6323MG AlGaInP Laser Diode ODE-208-1410A Z Rev.1 Jan. 2003 Description The HL6323MG is a 0.63 !m band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for
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HL6323MG
ODE-208-1410A
HL6323MG
HL6323MG:
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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