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Abstract: No abstract text available
Text: MC33501, MC33503 One Volt SMARTMOS Rail-to-Rail Operational Amplifier The MC33501/503 operational amplifier provides rail–to–rail operation on both the input and output. The output can swing within 50 mV of each rail. This rail–to–rail operation enables the user to make
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MC33501,
MC33503
MC33501/503
r14525
MC33501/D
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k435
Abstract: No abstract text available
Text: MC33502 One Volt SMARTMOS Rail-to-Rail Dual Operational Amplifier The MC33502 operational amplifier provides rail–to–rail operation on both the input and output. The output can swing within 50 mV of each rail. This rail–to–rail operation enables the user to make full use
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MC33502
r14525
MC33502/D
k435
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APGM0035S
Abstract: M567 tb
Text: RO-P-DS 3088 Preliminary Information MAAPGM0035S 2.5-5.5 GHz 1.6 W Power Amplifier Features ♦ ♦ ♦ ♦ MAAPGM0035S 2.5-5.5 GHz GaAs MMIC Amplifier 1.6 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG MESFET Process High Performance Ceramic Bolt Down Package
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MAAPGM0035S
APGM035S
MAAPGM0035S
APGM0035S
M567 tb
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500 W Outdoor TWT Power Amplifier
Abstract: CPI 250 T02KO Traveling Wave Amplifier IESS-308 Ka-band TWTA TWTA Ka WR-34G cpi twta
Text: 250 W Outdoor TWT Power Amplifier for Satellite Communications Ka- Band The T02KO Series 250 watt peak power TWT Amplifier— Environmentally sealed compact design for outdoor operation Ka-Band Global Applications Rugged, compact and lightweight amplifier
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T02KO
EN60215,
EN-61000-3-2
500 W Outdoor TWT Power Amplifier
CPI 250
Traveling Wave Amplifier
IESS-308
Ka-band
TWTA
TWTA Ka
WR-34G
cpi twta
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LM709 APPLICATION NOTE
Abstract: LM709 LM709CN 709 operational amplifier N709 lb8 marking national semiconductor AN29 LM709H/883B LM709CH
Text: LM709 Operational Amplifier General Description The LM709 series is a monolithic operational amplifier intended for general-purpose applications Operation is completely specified over the range of voltages commonly used for these devices The design in addition to providing high
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LM709
AN-24:
4-Nov-95
28-Jun-96
05-Aug-2000
////roarer/root/data13/imaging/BIT.
00804/08032000/NATL/08012000/LM709
LM709 APPLICATION NOTE
LM709CN
709 operational amplifier
N709
lb8 marking
national semiconductor AN29
LM709H/883B
LM709CH
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LM709
Abstract: LM709 APPLICATION NOTE 7025G N709 IC LM709C LM709AH
Text: LM709 Operational Amplifier General Description The LM709 series is a monolithic operational amplifier intended for general-purpose applications Operation is completely specified over the range of voltages commonly used for these devices The design in addition to providing high
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LM709
AN-29:
AN-24:
4-Nov-95
28-Jun-96
5-Aug-2002]
LM709 APPLICATION NOTE
7025G
N709
IC LM709C
LM709AH
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IESS-308
Abstract: twt 100 GHz EN-61010 IEEE-488
Text: VSTAR 30 Millimeter TWT Amplifier for Test and Measurement Applications Ka-Band VZA-6902J1 Ka-Band 40 Watt split mount millimeter wave TWT power amplifier — environmentally sealed compact design for indoor or outdoor operation. Meets International Safety Standard EN-61010,
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VZA-6902J1
EN-61010,
89/336/EEC
24-hour
WR-28
IESS-308
twt 100 GHz
EN-61010
IEEE-488
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IESS-308
Abstract: IESS-308 standard EN-61010
Text: VSTAR 30 Millimeter TWT Amplifier for Test and Measurement Applications Ka-Band VZA-6902J1 Ka-Band 40 Watt split mount millimeter wave TWT power amplifier — environmentally sealed compact design for indoor or outdoor operation. Meets International Safety Standard EN-61010,
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VZA-6902J1
EN-61010,
89/336/EEC
24-hour
WR-28
IESS-308
IESS-308 standard
EN-61010
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IESS-308
Abstract: EN-61010
Text: VSTAR 30 Millimeter TWT Amplifier for Test and Measurement Applications K-Band VZK-6901J1 K-Band 40 Watt split mount millimeter wave TWT power amplifier — environmentally sealed compact design for indoor or outdoor operation. Meets International Safety Standard EN-61010,
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VZK-6901J1
EN-61010,
89/336/EEC
24-hour
WR-42
IESS-308
EN-61010
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EN-60215
Abstract: EN60215 CPI 750 watt twt tube CPI 750 twt tube IESS-308 CPI Helix tube 60215 650VA WR-42F
Text: 150W CW TWT Power Amplifier for EMI/EMC Testing & Communications K- Band The New VZK-2790J1 Series 150 watt CW K-band TWT Power Amplifier— Environmentally sealed compact design for outdoor operation K-Band Global Applications Rugged, compact and lightweight amplifier
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VZK-2790J1
EN-60215,
89/336/EEC
EN-61000-3-2
C/1000
WR-42F
WR-42G
EN-60215
EN60215
CPI 750 watt twt tube
CPI 750 twt tube
IESS-308
CPI Helix tube
60215
650VA
WR-42F
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VZK-6901J1
Abstract: IESS-308 EN-61010
Text: VSTAR 30 Millimeter TWT Amplifier for Test and Measurement Applications K-Band VZK-6901J1 K-Band 40 Watt split mount millimeter wave TWT power amplifier — environmentally sealed compact design for indoor or outdoor operation. Meets International Safety Standard EN-61010,
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VZK-6901J1
EN-61010,
89/336/EEC
24-hour
WR-42
VZK-6901J1
IESS-308
EN-61010
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VZA-6903E
Abstract: satcom amplifier 750W fault wr 2300 flange waveguide EN-60215 30 GHz Klystron cpi amplifier 750W fault Load VSWR for Multicarrier power amplifier IESS-308 UG-1530 ka klystron pulse
Text: 750W Outdoor EIK Amplifier for Satellite Communications K a - B a nd The VZA-6903E Ka-Band 750 Watt EIK Amplifier — high efficiency in an environmentally sealed compact package designed for outdoor operation Easy to Maintain Provides up to 750 watts of power in a rugged
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VZA-6903E
VZA-6903E
satcom amplifier 750W fault
wr 2300 flange waveguide
EN-60215
30 GHz Klystron
cpi amplifier 750W fault
Load VSWR for Multicarrier power amplifier
IESS-308
UG-1530
ka klystron pulse
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CPI 750 twt tube
Abstract: VTM6392M4B WRD-750 VTM6292M4 wrd750 transformer 750 kVA IESS-308 IESS-308/309 CPI 750 watt twt tube T.W.T. traveling wave tube
Text: 250W or 320W TWT Amplifier for Test and Measurement Applications 8 . 0 to 1 8 .0 GHz The VZM-6993J5 250 or 320 Watt TWT Compact Power Amplifier Global Applications Provides 250 or 320 watts of power in a 4 rack unit package. 230 VAC operation. Designed to meet
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VZM-6993J5
EN61010
89/336/EEC.
24-hour
CPI 750 twt tube
VTM6392M4B
WRD-750
VTM6292M4
wrd750
transformer 750 kVA
IESS-308
IESS-308/309
CPI 750 watt twt tube
T.W.T. traveling wave tube
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Untitled
Abstract: No abstract text available
Text: Advance Information RO-P-DS-3085 MAAPGM0052-DIE MAAPGM0052-DIE 4.0-18.0 GHz Distributed Power Amplifier Features ♦ ♦ ♦ ♦ 0.5 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation GaAs MSAG Process Proven Manufacturability and Reliability
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RO-P-DS-3085
MAAPGM0052-DIE
MAAPGM0052-Die
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MAAPGM0057-DIE
Abstract: No abstract text available
Text: MAAPGM0057-DIE 2.0-13.0 GHz 1.2 W Power Amplifier RO-P-DS-3089 A Preliminary Information Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process Proven Manufacturability and Reliability No Airbridges
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MAAPGM0057-DIE
RO-P-DS-3089
MAAPGM0057-Die
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Untitled
Abstract: No abstract text available
Text: MAAPGM0057-DIE 2.0-13.0 GHz 1.2 W Power Amplifier RO-P-DS-3089 A Preliminary Information Features ♦ ♦ ♦ ♦ 1.2 Watt Saturated Output Power Level Variable Drain Voltage 4-10V Operation MSAG Process Proven Manufacturability and Reliability No Airbridges
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MAAPGM0057-DIE
RO-P-DS-3089
MAAPGM0057-Die
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MAALGM0006-DIE
Abstract: No abstract text available
Text: RO-P-DS-3082 A Preliminary Datasheet MAALGM0006-DIE 1.5-6.5 GHz Low Noise Amplifier MAALGM0006-DIE Features ♦ ♦ ♦ ♦ 3.5 dB Typical Noise Figure Variable Drain Voltage 3-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability No Airbridges
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RO-P-DS-3082
MAALGM0006-DIE
MAALGM0006-Die
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Untitled
Abstract: No abstract text available
Text: RO-P-DS-3082 A Preliminary Datasheet MAALGM0006-DIE 1.5-6.5 GHz Low Noise Amplifier MAALGM0006-DIE Features ♦ ♦ ♦ ♦ 3.5 dB Typical Noise Figure Variable Drain Voltage 3-6V Operation GaAs MSAG Process Proven Manufacturability and Reliability No Airbridges
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RO-P-DS-3082
MAALGM0006-DIE
MAALGM0006-Die
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sf 818 transistor
Abstract: 2SC5338 transistor NEC B 617 NPN transistor mhz s-parameter 2SC4703
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage VCE = 5 V . This low distortion characteristics is suitable for the CATV, tele-communication, and such.
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2SC5338
2SC5338
2SC4703
sf 818 transistor
transistor NEC B 617
NPN transistor mhz s-parameter
2SC4703
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455khz
Abstract: 225kHz FM NTE1301 FM radio CIRcuit DIAGRAM NTE130 53dBu
Text: NTE1301 Integrated Circuit AM/FM IF Description: The NTE1301 is a silicon monolithic integrated circuit in a 7–Lead SIP type package designed for the AM/FM IF amplifier of a radio receiver. Two differential amplifiers and an AGC circuit perform good limiting quality for FM operation and good AGC characteristics for AM operation.
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NTE1301
NTE1301
455kHz,
455khz
225kHz FM
FM radio CIRcuit DIAGRAM
NTE130
53dBu
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a1151
Abstract: LA1225M YT-30103 FM IF Detector IC A11515 MFP10S 60172 capacitor
Text: Ordering number : ENN6017 Monolithic Linear IC LA1225M FM IF Detector IC Functions Package Dimensions • • • • • unit: mm IF amplifier Quadrature detector Signal meter SD IF buffer 3086A-MFP10S 10 0.625 [LA1225M] 6 4.4 • Low-voltage operation 1.8 V or higher
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ENN6017
LA1225M
086A-MFP10S
LA1225M]
MFP-10S
MFP10S
a1151
LA1225M
YT-30103
FM IF Detector IC
A11515
MFP10S
60172 capacitor
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CPI 750 twta tube
Abstract: CPI Helix tube CPI 750 watt twt tube EN-60215 antenna ka band cpi twta IESS-308 TWTA Ka WR-34G WR-28G
Text: 175 W Outdoor TWT Power Amplifier for Satellite Communications Ka- Band The T01KO Series 175 Watt Ka-Band TWT Power Amplifiers— Environmentally sealed compact design for outdoor operation Meets International Safety Standard EN-60215, Electromagnetic Compatibility
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T01KO
EN-60215,
89/336/EEC
EN-61000-3-2
RS422/485
WR-28F
WR-34F
WR-34G
WR-28G
CPI 750 twta tube
CPI Helix tube
CPI 750 watt twt tube
EN-60215
antenna ka band
cpi twta
IESS-308
TWTA Ka
WR-34G
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transistor smd c5c
Abstract: transistor SMD R4d SMD diode C5C smd transistor r4D smd transistor R2C smd diode r4a MLQP48 smd transistor r4c r2d SMD Transistor IRS2093
Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;
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IRS2093M
IRF6665
transistor smd c5c
transistor SMD R4d
SMD diode C5C
smd transistor r4D
smd transistor R2C
smd diode r4a
MLQP48
smd transistor r4c
r2d SMD Transistor
IRS2093
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transistor SMD R4d
Abstract: No abstract text available
Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;
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IRS2093M
IRF6665
transistor SMD R4d
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