Untitled
Abstract: No abstract text available
Text: Silicon PIN Photo Diode OPD1616N High Speed Sensitivity High Speed Sensitivity 1. Structure 1.1 Chip Size : 1.60mm X 1.60mm 1.2 Chip Thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Cathode Top : 300um X 300um
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Original
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PDF
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OPD1616N
300um
300um
000Lux
2856k.
|
OPD1616N
Abstract: No abstract text available
Text: Silicon PIN Photo Diode OPD1616N High Speed Sensitivity High Speed Sensitivity unit : ㎛ 1. Structure 1.1 Chip Size : 1.60mm X 1.60mm 1.2 Chip Thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size
|
Original
|
PDF
|
OPD1616N
300um
300um
000Lux
2856k.
OPD1616N
|