Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB1204 1. Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230 20um 1.3 Metallization : Top - Al 2um , Bottom - Au 1.4 Back Metal : Au(1,000 ) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size : Emitter Electrode
|
Original
|
PDF
|
OPB1204
130um
000lux
2856K.
RL-1000
|
839 transistor
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB1204 1. Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al 2um , Bottom - Au 1.4 Back Metal : Au(1,000Å) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size : Emitter Electrode
|
Original
|
PDF
|
OPB1204
130um
000lux
2856K.
500uA
RL-1000
839 transistor
|