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    Untitled

    Abstract: No abstract text available
    Text: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm


    Original     		OPB0808 140um 100um 100um 500uA PDF

    835 CB

    Abstract: OPB0808 transistor 835
    Text: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm


    Original     		OPB0808 140um 100um 100um 500uA 835 CB OPB0808 transistor 835 PDF