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    OPA9441F

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9441F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage


    Original     		OPA9441F 100mA 135um --------------------------11mx --------------------------11mil OPA9441F PDF

    Untitled

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA9441F GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage


    Original     		OPA9441F 100mA 135um --------------------------11mil PDF