OPA8512 Search Results

OPA8512 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
OPA8512HP Abstract: No abstract text available Text: OPA8512HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512HP --------------------130um OPA8512HP	PDF
Untitled Abstract: No abstract text available Text: OPA8512 Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512 --------------------130um	PDF
Untitled Abstract: No abstract text available Text: OPA8512CND Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512CND --------------------110um	PDF
OPA8512 Abstract: No abstract text available Text: OPA8512 Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512 --------------------130um OPA8512	PDF
OPA8512CND Abstract: No abstract text available Text: OPA8512CND Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512CND --------------------110um OPA8512CND	PDF
Untitled Abstract: No abstract text available Text: OPA8512HP Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512HP --------------------130um	PDF
Untitled Abstract: No abstract text available Text: OPA8512WDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512WDD --------------------120um	PDF
OPA8512WDD Abstract: No abstract text available Text: OPA8512WDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage	Original	OPA8512WDD --------------------120um OPA8512WDD	PDF