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    OPA7714WDD

    Abstract: No abstract text available
    Text: Infrared LED Chip OPA7714WDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


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    PDF OPA7714WDD 120umeristics 120um OPA7714WDD

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    Abstract: No abstract text available
    Text: Infrared LED Chip OPA7714WDD AlGaAs / GaAs 1. Material Substrate GaAs N Type Epitaxial Layer AlGaAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Typ


    Original
    PDF OPA7714WDD 120um