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    Untitled

    Abstract: No abstract text available
    Text: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit


    Original     		PDF OPA6316 10mil 10mil 11mil 11mil 115um

    Untitled

    Abstract: No abstract text available
    Text: Orange LED Chip OPA6316 GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit


    Original     		PDF OPA6316 -------------------------------------20mA 10mil 10mil 11mil 11mil 115um

    Untitled

    Abstract: No abstract text available
    Text: Orange LED Chip OPA6316H GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit


    Original     		PDF OPA6316H -------------------------------------20mA 10mil 10mil 11mil 11mil 115um

    Untitled

    Abstract: No abstract text available
    Text: Orange LED Chip OPA6316H GaAsP/GaP 1. Material Substrate GaP N Type Epitaxial Layer GaAsP (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage VF(1) Typ Max Unit


    Original     		PDF OPA6316H 10mil 10mil 11mil 11mil 115um