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    ONSEMI TRANSISTOR 3150 Search Results

    ONSEMI TRANSISTOR 3150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ONSEMI TRANSISTOR 3150 Datasheets Context Search

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    TRANSFORMER 86A-4222A

    Abstract: LGA0410 PL3120-E4T10 TMS80079CT lm25XX PL3120 PL3150-L10 JVR-14S821K Hollyfuse 5RT-063H MGCD0-00008
    Text: P L 3 1 2 0 / P L 3 1 5 0 ®/ P L 3 1 7 0 Power Line Smart Transceiver Data Book 005-0193-01B ® Echelon, LON, LONWORKS, i.LON, LonBuilder, NodeBuilder, LNS, LonTalk, Neuron, 3120, 3150, LonMaker, ShortStack, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 is a trademark of Echelon Corporation.


    Original     		PDF 005-0193-01B 3120/PL 3150/PL TRANSFORMER 86A-4222A LGA0410 PL3120-E4T10 TMS80079CT lm25XX PL3120 PL3150-L10 JVR-14S821K Hollyfuse 5RT-063H MGCD0-00008