PNP POWER TRANSISTOR SOT23
Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
-70mV
A/100mA
ZXTP2006E6TA
PNP POWER TRANSISTOR SOT23
FT-110
sot23 6 device Marking
SOT23-6
ZXTP2006E6
ZXTP2006E6TA
ZXTP2006E6TC
52 sot23-6
PNP SOT23-6
.FT SOT23-6
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Untitled
Abstract: No abstract text available
Text: UM8515 20V P-Channel Power MOSFET UM8515 SOT23-6 General Description The UM8515 is a low threshold P-channel MOSFET, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The devices use a space-saving, small-outline SOT23-6 package.
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UM8515
UM8515
OT23-6
OT23-6
OT23-ed
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Untitled
Abstract: No abstract text available
Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Type RDS on VDSS max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 5 6 3 STT6N3LLH6 30 V 1 0.036 Ω (VGS= 4.5 V) SOT23-6L
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OT23-6L
OT23-6L
DocID023012
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STT6N3LLH6
Abstract: DIODE marking A2 stt6n3
Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet — preliminary data Features Type RDS on VDSS STT6N3LLH6 30 V max 0.025 Ω (VGS= 10 V) 0.04 Ω (VGS= 4.5 V) ID 5 6 6A 3 2 1.6 W 1 SOT23-6L
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OT23-6L
OT23-6L
STT6N3LLH6
DIODE marking A2
stt6n3
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PDF
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MAX4514
Abstract: AE MARKING 5PIN
Text: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply
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MAX4514/MAX4515
MAX4514
MAX4515
MAX4516/MAX4517.
OT23-5
AE MARKING 5PIN
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Marking AE sot23-5
Abstract: MAX4514 w8001 Marking AE sot235 AF SOT23-5 MAX4514CUK MAX4514CPA MAX4514CSA MAX4515 sot23-5 AE
Text: 19-1069; Rev 0; 6/96 Low-Voltage, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ +2V to +12V Single-Supply Operation ♦ Guaranteed On-Resistance: 20Ω with +5V Supply 10Ω with +12V Supply
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OT23-5
150ns,
100ns
OT23-5
MAX4514/MAX4515
Marking AE sot23-5
MAX4514
w8001
Marking AE sot235
AF SOT23-5
MAX4514CUK
MAX4514CPA
MAX4514CSA
MAX4515
sot23-5 AE
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PDF
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Mosfet
Abstract: SSF2418E 2418E
Text: SSF2418E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 18mohm(typ.) ID 6A SOT23-6 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF2418E
18mohm
OT23-6
2418E
Mosfet
SSF2418E
2418E
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A102C
Abstract: No abstract text available
Text: SIDACtor Protection Thyristors Broadband Optimized Protection SDP Biased Series - SOT23-6 RoHS Description This new SDP Biased series provides overvoltage protection for applications such as VDSL2, ADSL2, and ADSL2+ with minimal effect on data signals. This
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OT23-6
OT23-6
30MHz)
180mm
EIA-481
OT-23
A102C
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ag sot23-5
Abstract: MAX4516 MAX4516CPA MAX4516CSA MAX4516CUK MAX4517 sot23 Transistor marking p2
Text: 19-1068; Rev 0; 6/96 Dual-Supply, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package _Applications ♦ Fast Switching Speed: tON = 100ns, tOFF = 75ns ♦ ±1V to ±6V Dual-Supply Operation
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OT23-5
100ns,
95ref
90ref
21-0057B
OT23-5
ag sot23-5
MAX4516
MAX4516CPA
MAX4516CSA
MAX4516CUK
MAX4517
sot23 Transistor marking p2
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Ic D 1708 ag
Abstract: MAX4516 MAX4516CPA MAX4516CSA MAX4516CUK MAX4517
Text: 19-1068; Rev 0; 6/96 Dual-Supply, Low-On-Resistance, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package _Applications ♦ Fast Switching Speed: tON = 100ns, tOFF = 75ns ♦ ±1V to ±6V Dual-Supply Operation
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OT23-5
100ns,
95ref
90ref
21-0057B
OT23-5
Ic D 1708 ag
MAX4516
MAX4516CPA
MAX4516CSA
MAX4516CUK
MAX4517
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Untitled
Abstract: No abstract text available
Text: STT6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet − target specification Features Order code VDS RDS on max ID STT6P2UH7 20 V 0.029 Ω @ 4.5 V 6A • Ultra logic level • Extremely low on-resistance RDS(on)
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OT23-6L
OT23-6L
SC14195p
DocID024980
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maxim CODE TOP MARKING
Abstract: Analog Marking Information sot23-5 ea product code Package Marking EA SOT23-5 esd diode a2 sot23-5 package marking PA sot23-5 CA 65 marking sot23 marking AB sot23-5 CA SOT23-5
Text: 19-1062; Rev 0; 6/96 Low-Voltage, SPST, CMOS Analog Switches _Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ _Applications Available in SOT23-5 Package +2V to +12V Single-Supply Operation Guaranteed On-Resistance: 250Ω at +5V
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OT23-5
MAX4501CPA
MAX4501CSA
1-0045A
maxim CODE TOP MARKING
Analog Marking Information
sot23-5 ea product code
Package Marking EA SOT23-5
esd diode a2
sot23-5 package marking PA
sot23-5 CA
65 marking sot23
marking AB sot23-5
CA SOT23-5
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Untitled
Abstract: No abstract text available
Text: UM8516 20V P-Channel Power MOSFET UM8516 SOT23-6 General Description The UM8516 is a low threshold P-channel MOSFET with gate to source TVS protection, have extremely low on-resistance. This benefit provides the designer with an extremely efficient device
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UM8516
UM8516
OT23-6
OT23-6
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PDF
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Untitled
Abstract: No abstract text available
Text: SIDACtor Protection Thyristors Broadband Optimized Protection SDP Biased Series - SOT23-6 RoHS Pb e3 Description This new SDP Biased series provides overvoltage protection for applications such as VDSL2, ADSL2, and ADSL2+ with minimal effect on data signals. This
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OT23-6
OT23-6
30MHz)
180mm
EIA-481
OT-23
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Mosfet
Abstract: SSF3051G7
Text: SSF3051G7 30V P-Channel MOSFET Main Product Characteristics D RDS on 3051G7 VDSS -30V 45mohm(typ.) G S ID -4A Marking and Pin SOT23-6 Assignment Schematic Diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load
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SSF3051G7
3051G7
45mohm
OT23-6
3000pcs
10pcs
30000pcs
Mosfet
SSF3051G7
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marking code 7N1
Abstract: sot23 7N1 DS33564
Text: A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features BVDSS RDS ON Max 100V 700mΩ @ VGS = 10V 900mΩ @ VGS = 6V • • • • • • • ID TA = +25°C (Note 6) 0.76A 0.67A Low On-Resistance
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ZXMN10A07F
AEC-Q101
DS33564
marking code 7N1
sot23 7N1
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Untitled
Abstract: No abstract text available
Text: STT4P3LLH6 P-Channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in SOT23-6L package Datasheet - preliminary data Features 4 5 6 3 Order code VDS RDS on max ID STT4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark 2 1
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OT23-6L
OT23-6L
DocID024615
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EA 5pin transistor
Abstract: Package Marking EA SOT23-5 MAX4504CUK MAX4504CUK T
Text: 19-1064; Rev 0; 6/96 Low-Voltage, Dual-Supply, SPST, CMOS Analog Switches _Features ♦ Available in SOT23-5 Package ♦ Dual-Supply Operation from ±1V to ±6V ♦ Guaranteed On-Resistance: W with ±5V Supplies 250Ω ♦ Guaranteed Low Off-Leakage Currents:
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MAX4503/MAX4504
MAX4503
MAX4504
MAX4501/
MAX4502,
1-0045A
EA 5pin transistor
Package Marking EA SOT23-5
MAX4504CUK
MAX4504CUK T
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T2 MARKING SOT23-6
Abstract: marking ma sot23-6 PNP POWER TRANSISTOR SOT23
Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in
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OT23-6
-70mV
A/100mA
T2 MARKING SOT23-6
marking ma sot23-6
PNP POWER TRANSISTOR SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Pac k aged in t he SOT2 3 -6 out line t his new 5 t h generation low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in
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OT23-6
-70mV
A/100mA
W24250
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PDF
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Untitled
Abstract: No abstract text available
Text: Part no. ZXMN2088DE6 20V Dual SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V BR DSS 20 RDS(on) (Ω) ID (A) 0.200 @ VGS= 4.5V 2.1 0.240 @ VGS= 2.5V 1.9 0.310 @ VGS= 1.8V 1.7 Description This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
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ZXMN2088DE6
OT23-6
OT23-6
ZXMN2088DE6TA
D-81541
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PDF
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Untitled
Abstract: No abstract text available
Text: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDSS RDS on max ID PTOT 6A 1.6 W 0.025 Ω (VGS= 10 V) 4 STT6N3LLH6 5 6 30 V 3 2 1 0.036 Ω (VGS= 4.5 V)
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OT23-6L
OT23-6L
DocID023012
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PDF
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Untitled
Abstract: No abstract text available
Text: 19-1068: Rev 0:6/96 A f /X I A I , Dual-Supply, Low-On-Reslstance SPST, CMOS Analog Switches _ Features ♦ Available in SOT23-5 Package ♦ ±1V to ±6V Dual-Supply Operation ♦ Guaranteed On-Resistance: 200 with ±5V Supplies These CMOS switches can operate continuously with
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OCR Scan
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MAX4516/MAX4517
MAX4516
MAX4517
MAX4514/MAX415.
MAX4S16/MAX4S17
MAX4516EUK
MAX4516MJA
MAX4517CPA
MAX4517CSA
MAX4517CUK
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PDF
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IRF 1450
Abstract: km 1667 km 1667 datasheet mmic marking code j
Text: SIEMENS CMY 91 GaAs MMIC Datasheet * GaAs mixer with integrated IF-amplifier for mobile communication * Frequency range 0.8 GHz to 2.5 GHz * Very low power consumption 1 mA typ. * Single positive supply voltage * Operating voltage range: 2.7 to 6 V * Miniature package MW6 based on SOT23
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OCR Scan
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Q62702-M9
01-coil;
B82412-A3221-M
900MHz
1450MHz
1900MHz
IRF 1450
km 1667
km 1667 datasheet
mmic marking code j
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PDF
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