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    ON SEMICONDUCTOR MARKING CODE 1P Search Results

    ON SEMICONDUCTOR MARKING CODE 1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR MARKING CODE 1P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sod123 diode 5H

    Abstract: SOD123 5h marking AA DIODE SOD CBVK741B019 F63TNR MMSD4148 MMSZ5221B SOD-123 marking code A1 diode sod123 W1 semiconductor band color code
    Text: MMSD4148 MMSD4148 Top Marking: 5H SOD123 COLOR BAND DENOTES CATHODE Top Marking: 5H SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MMSD4148 OD123 MMBD1201-1205 sod123 diode 5H SOD123 5h marking AA DIODE SOD CBVK741B019 F63TNR MMSD4148 MMSZ5221B SOD-123 marking code A1 diode sod123 W1 semiconductor band color code

    1PMT5920B

    Abstract: 1PMT5920BT1 1PMT5921BT1 1PMT5922BT1 1PMT5923BT1 1PMT5924BT1 1PMT5925BT1 GT320B GT329B
    Text: 1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same


    Original     		PDF 1PMT5920B 1PMT5920B/D 1PMT5920BT1 1PMT5921BT1 1PMT5922BT1 1PMT5923BT1 1PMT5924BT1 1PMT5925BT1 GT320B GT329B

    1PMT12AT1

    Abstract: 1PMT16AT1 1PMT18AT1 1PMT22AT1 1PMT24AT1 1PMT36A 1PMT40A 1PMT58A 1PMT26AT1
    Text: 1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener


    Original     		PDF

    Transistor MARKING 1P

    Abstract: URSF05G49-1P URSF05G49-3P URSF05G49-5P 13-5B1A
    Text: URSF05G49-1P, URSF05G49-3P, URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P LOW POWER SWITCHING AND CONTROL APPLICATIONS Unit: mm Repetitive Peak Off−State Voltage: VDRM = 400 V Repetitive Peak Reverse Voltage: VRRM = 400 V


    Original     		PDF URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Transistor MARKING 1P URSF05G49-1P URSF05G49-3P URSF05G49-5P 13-5B1A

    transistor 1201 1203 1205

    Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
    Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF OT-23 MMBD1201 MMBD1204A MMBD1203 MMBD1205A transistor 1201 1203 1205 wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking

    diode hp 2835

    Abstract: DIODE Sp marking code diode marking 7n MARKING CODE R7 DIODE 4935A marking code 8P marking code KP CMDZ10L CMDZ11L CMDZ13L
    Text: Central CMDZ1L8 THRU CMDZ47L TM Semiconductor Corp. SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ1L8 Series Silicon Low Level Zener Diode is a high quality voltage regulator, manufactured in a


    Original     		PDF CMDZ47L 250mW, OD-323 CMDZ16L CMDZ18L CMDZ20L CMDZ22L CMDZ24L CMDZ27L CMDZ30L diode hp 2835 DIODE Sp marking code diode marking 7n MARKING CODE R7 DIODE 4935A marking code 8P marking code KP CMDZ10L CMDZ11L CMDZ13L

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


    Original     		PDF DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001

    MB85RS16

    Abstract: 30f 124 equivalent
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-3v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS501-00014-3v0-E MB85RS16 MB85RS16 30f 124 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TPS650380 www.ti.com SLVSBL5 – OCTOBER 2012 miniPMU with 3 DC/DC Converters for Application Processors FEATURES • 1 • 2 • • • 3 Step-Down Converters – 3-Phase Step-Down Converter – 2-Phase Step-Down Converter – 1-Phase Step-Down Converter


    Original     		PDF TPS650380

    diode marking code W5

    Abstract: BZT52-C2V7S
    Text: ADVANCE INFORMATION BZT52C2V7S - BZT52C39S SURFACE MOUNT ZENER DIODE POWER SEMICONDUCTOR Features • • • • Planar Die Construction Ultra-Small Surface Mount Package General Purpose Ideally suited for Automated Assembly Processes E D A B Mechanical Data


    Original     		PDF BZT52C2V7S BZT52C39S OD-323 OD-323, MIL-STD-202, DS30093 diode marking code W5 BZT52-C2V7S

    BAR65V-02V

    Abstract: BAR65V-02V-GS08
    Text: BAR65V-02V VISHAY Vishay Semiconductors RF PIN Diode Mechanical Data Case: Plastic case SOD 523 Weight: 1.5 mg Cathode Band Color: Laser marking Packaging Codes/Options: GS08 / 3 k per 7" reel (8 mm tape), 3 k/Box A Description With the very low forward resistance combined with a


    Original     		PDF BAR65V-02V BAR65V-02V OD523 D-74025 23-Oct-02 BAR65V-02V-GS08

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    CMSZ5262B

    Abstract: MARKING 8JC CMSZ5265B MARKING8JC
    Text: CMSZ5221B THRU CMSZ5267B SURFACE MOUNT SILICON ZENER DIODE 275mW, 2.4 THRU 75 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSZ5221B series silicon Zener diode is a high quality voltage regulator for use in industrial, commercial, entertainment and


    Original     		PDF CMSZ5221B CMSZ5267B 275mW, OT-323 CMS25 12-December CMSZ5262B MARKING 8JC CMSZ5265B MARKING8JC

    toko marking code

    Abstract: KV1811K marking code C8 toko marking
    Text: KV1811K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small UFD Surface Mount Package Very Low Operating Voltage 1 to 8 V Large Capacitance Ratio (A = 7.0 minimum) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1811K KV1811K determin-2375 IC-xxx-KV11811 0798O0 toko marking code marking code C8 toko marking

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments DAC7821 DA C7 821 SBAS365B – OCTOBER 2005 – REVISED JULY 2007 12-Bit, Parallel Input, Multiplying Digital-to-Analog Converter FEATURES • • • • • • • • • • • • • • 2.5V to 5.5V Supply Operation


    Original     		PDF DAC7821 SBAS365B 12-Bit, 10MHz 20-Lead 12-Bit

    1ps sot

    Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363
    Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation


    Original     		PDF 847PN OT-363 Q62702-C2374 May-12-1998 1ps sot bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363

    C4 diode

    Abstract: KV1832E
    Text: KV1832E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Operating Voltage 1 to 4 V Large Capacitance Ratio (A = 3.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1832E KV1832E IC-xxx-KV11832E 0798O0 C4 diode

    C4 diode

    Abstract: KV1832E 23marking
    Text: KV1832E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Operating Voltage 1 to 4 V Large Capacitance Ratio (A = 3.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel


    Original     		PDF KV1832E KV1832E IC-xxx-KV11832E 0798O0 C4 diode 23marking

    on semiconductor marking code 1P

    Abstract: No abstract text available
    Text: SBT2222A Semiconductor NPN Silicon Transistor Descriptions PIN Connection • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with SBT2907A


    Original     		PDF SBT2222A SBT2907A SBT2222A OT-23 OT-23 KSD-T5C052-001 on semiconductor marking code 1P

    GP 830 diode

    Abstract: on semiconductor marking code 1P
    Text: Central" CMDZ1L8 THRU CMDZ47L Sem iconductor Corp. SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ1L8 Series Silicon Low Level Zener Diode is a high quality voltage regulator, manufactured in a


    OCR Scan     		PDF CMDZ47L 250mW, OD-323 OD-323 31-October GP 830 diode on semiconductor marking code 1P

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


    OCR Scan     		PDF 569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90

    TFK 715

    Abstract: BAW56S
    Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363


    OCR Scan     		PDF Q62702-A1253 OT-363 100ns, TFK 715 BAW56S

    Marking A7S sot

    Abstract: No abstract text available
    Text: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package


    OCR Scan     		PDF Q62702-A1277 OT-363 EHN00019 100ns, Marking A7S sot

    DIODE marking s6 code

    Abstract: DIODE marking TY
    Text: Schottky Barrier Diode Axial Diode Wtm D1NS6 OUTLINE Package : AX057 Unit-mm Weight 0.19g Typ 60 V 1A Feature UJ 02.6 • Tj=150°C • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E • P r r s m Rating • Switching Regulator • DC/DC nyjt- l? • m


    OCR Scan     		PDF AX057 DIODE marking s6 code DIODE marking TY