Untitled
Abstract: No abstract text available
Text: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7807VPbF-1
IRF7807VTRPbF-1
TD-020D
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MP6404
Abstract: 2-32C1K
Text: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 6 in 1 MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4 V gate drive • Small package by full molding (SIP 12 pin)
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MP6404
MP6404
2-32C1K
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mp6404 A
Abstract: MP6404
Text: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Six L2-π-MOSV inOne MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4-V gate drivability • Small package by full molding (SIP 12 pins)
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MP6404
mp6404 A
MP6404
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Untitled
Abstract: No abstract text available
Text: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 6 in 1 MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4 V gate drive · Small package by full molding (SIP 12 pin)
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MP6404
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MP4212
Abstract: Pch MOS FET
Text: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Four L2-π-MOSV in One MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver Unit: mm • 4-V gate drivability • Small package by full molding (SIP 10 pin)
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MP4212
MP4212
Pch MOS FET
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Silicon NP Channel MOS FET High Speed Power Switching
Abstract: MP4212
Text: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 4 in 1 MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • 4 V gate drive · Small package by full molding (SIP 10 pin) · High drain power dissipation (4 devices operation)
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MP4212
Silicon NP Channel MOS FET High Speed Power Switching
MP4212
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DIODE marking 7AA
Abstract: IRF7807PBF
Text: IRF7807PbF-1 IRF7807APbF-1 HEXFET Chip-Set for DC-DC Converters VDS RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 25 mΩ 12 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package
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IRF7807PbF-1
IRF7807APbF-1
D-020D
DIODE marking 7AA
IRF7807PBF
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MP4212
Abstract: Pch MOS FET mp42
Text: MP4212 Silicon N&P Channel MOS Type Four L2-π-MOSV in One TOSHIBA Power MOS FET Module MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • • • • • • • Unit: mm 4-V gate drivability Small package by full molding (SIP 10 pin)
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MP4212
MP4212
Pch MOS FET
mp42
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Untitled
Abstract: No abstract text available
Text: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Four L2-π-MOSV in One MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • • • • • • • Unit: mm 4-V gate drivability Small package by full molding (SIP 10 pin)
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MP4212
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PD-93839A
Abstract: FET MARKING QG 10BQ040 IRLR8103V IRLR8503
Text: PD-93839A IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D Description This new device employs advanced HEXFET Power
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PD-93839A
IRLR8503
IRLR8503
PD-93839A
FET MARKING QG
10BQ040
IRLR8103V
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IRF FET
Abstract: FET MARKING QG MOSFET LOSSES SYNC BUCK fet data book free download 10BQ040 EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503
Text: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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5095A
IRLR8503PbF
IRLR8503
combi318
EIA-481
EIA-541.
EIA-481.
IRF FET
FET MARKING QG
MOSFET LOSSES SYNC BUCK
fet data book free download
10BQ040
EIA-541
IRFR120
IRFU120
IRLR8103V
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P916A
Abstract: FET marking code FET MARKING QG
Text: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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IRLR8503PbF
IRLR8503PbF
IRLR8503
EIA-481
EIA-541.
EIA-481.
P916A
FET marking code
FET MARKING QG
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10BQ040
Abstract: EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503 RLR8503 fet dpak FET marking code
Text: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D
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5095A
IRLR8503PbF
IRLR8503
combi19
EIA-481
EIA-541.
EIA-481.
10BQ040
EIA-541
IRFR120
IRFU120
IRLR8103V
RLR8503
fet dpak
FET marking code
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FET MARKING CODE
Abstract: IRF FET 10BQ040 EIA-541 IRFR120 IRLR8103V IRLR8503 FET MARKING QG Junction P FET High Current Low Side Switch
Text: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description
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PD-93839C
IRLR8503
IRLR8503
immu318
EIA-481
EIA-541.
EIA-481.
FET MARKING CODE
IRF FET
10BQ040
EIA-541
IRFR120
IRLR8103V
FET MARKING QG
Junction P FET
High Current Low Side Switch
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FET MARKING QG
Abstract: IRF7901D1 FET MARKING
Text: PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate
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93844B
IRF7901D1
FET MARKING QG
IRF7901D1
FET MARKING
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Untitled
Abstract: No abstract text available
Text: PD - 93844B IRF7901D1 Q1 S ource Q1 Gate 1 8 Pwr Vin 2 7 Pwr Vin PGND 3 6 Pwr Vout Q2 Gate 4 5 Pwr Vout Top View www.irf.com 1 9/19/01 PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc
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93844B
IRF7901D1
3844A
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IRF7811AVTRPBF
Abstract: No abstract text available
Text: IRF7811AVPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 14 mΩ 17 nC 10.8 A Base Part Number Package Type IRF7811AVPbF-1 SO-8 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7811AVPbF-1
IRF7811AVTRPbF-1
D-020D
IRF7811AVTRPBF
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING
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2N7336
250mA
FOR25
CER-DIP-14
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FET MARKING QG
Abstract: ON QG FET 6 PIN IRF7901D1
Text: PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier Dual FETKYTM
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3844A
IRF7901D1
FET MARKING QG
ON QG FET 6 PIN
IRF7901D1
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Untitled
Abstract: No abstract text available
Text: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS
IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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IRF7809AVPbF-1
IRF7809AV
IRF7809AVTRPbF-1
D-020D
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Untitled
Abstract: No abstract text available
Text: IRF8910PbF-1 HEXFET Power MOSFET VDS 20 RDS on max V 13.4 (@VGS = 10V) mΩ RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 7.4 nC 10 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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IRF8910PbF-1
TD-020D
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MP6403
Abstract: No abstract text available
Text: TOSHIBA MP6403 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M PfiAfl 3 HIGH POWER SWITCHING APPLICATION. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. • • • • • • 4-Volt Gate Drive Available Small Package by Full Molding (SEP 12 Pin)
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OCR Scan
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MP6403
170m0
10//A
Tc-25
MP6403
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-7r-MOSlV 4 IN 1 MP4207 INDUSTRIAL APPLICATIONS Unit in mm O HIGH PO W ER HIGH SPEED SWITCHING APPLICATIONS. O H-SW ITCH DRIVER • 4-Volt Gate Drive. • Small Package by Full Molding. (SIP 10 Pin)
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MP4207
170mQ
10//A
100/JA
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MP6403
Abstract: n fet 60v 50a 2-32C1K 170m0
Text: TO SH IBA MP6403 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-tt-MOSIV 6 IN 1 MP6403 HIGH POWER SWITCHING APPLICATION. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. • 4-V o lt Gate D rive A vailable • Sm all Package by F u ll Molding (S IP 12 Pin )
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MP6403
170m0
MP6403
n fet 60v 50a
2-32C1K
170m0
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