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    ON 614 POWER TRANSISTOR Search Results

    ON 614 POWER TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    ON 614 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STC4614

    Abstract: P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET
    Text: 614 STC4 STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		PDF STC4614 STC4614 0V/10A, VTC4614 P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET

    on 614 power transistor

    Abstract: CSA614 CSD288 c120 transistor
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION


    Original     		PDF ISO/TS16949 O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor CSA614 CSD288 c120 transistor

    on 614 power transistor

    Abstract: transistor D 288 transistor 614 CSA614 CSD288
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION


    Original     		PDF O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor transistor D 288 transistor 614 CSA614 CSD288

    on 614 power transistor

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator


    Original     		PDF O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor

    on 614 power transistor

    Abstract: transistor D 288 transistor 614 transistor 9002 CSA614 CSD288
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR


    Original     		PDF O-220 CSA614 CSD288 CSA614, C-120 on 614 power transistor transistor D 288 transistor 614 transistor 9002 CSA614 CSD288

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA614 CSD288 CSA614, CSD288 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier and Power Regulator PIN CONFIGURATION


    Original     		PDF O-220 CSA614 CSD288 CSA614, C-120

    TRANSISTOR SOT23, Vbe 8V

    Abstract: FMMT614 DSA003700
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF FMMT614 500mA 500mA, 100mA, 100mHz TRANSISTOR SOT23, Vbe 8V FMMT614 DSA003700

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF FMMT614 500mA 500mA, 100mA, 100mHz

    Z86L613

    Abstract: No abstract text available
    Text: Z86L611/612/613/614/615 28-Pin Low-Voltage IR Microcontrollers Product Specification PS019001-1002 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition


    Original     		PDF Z86L611/612/613/614/615 28-Pin PS019001-1002 Z86L613

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    smd transistor 5k

    Abstract: SMD BR 17 smd transistor 614 FMMT614 smd marking 5K
    Text: Transistors SMD Type Power Darlington Transistor FMMT614 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 hFE up to 5k at IC= 500mA 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast switching +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1


    Original     		PDF FMMT614 OT-23 500mA 500mA 100mA 100MHz smd transistor 5k SMD BR 17 smd transistor 614 FMMT614 smd marking 5K

    Untitled

    Abstract: No abstract text available
    Text: NTE2675 Silicon NPN Transistor High Voltage High Speed Switch TO3PN Type Package Features: D High Reliability D High Voltage, High Speed Switching Applications: D Switching Regulators D Ultrasonic Generators D High Frequency Inverters D General Purpose Power Amplifiers


    Original     		PDF NTE2675 600mA,

    ac drive electronic circuit diagram

    Abstract: fsync in PCM pcm codec 616 receiver ic on 614 power transistor TRANSISTOR 612 BU8731KV 128KHz cellular signal amplifier circuit diagram
    Text: Communication ICs PCM codec IC for digital cellular telephones BU8731KV The BU8731KV is a PCM codec IC developed for use with digital cellular telephones. It contains analog input / output features such as a 14-bit linear precision, µ / A-LAW codec, mic and speaker amplifiers, and switching transistor for the


    Original     		PDF BU8731KV BU8731KV 14-bit ac drive electronic circuit diagram fsync in PCM pcm codec 616 receiver ic on 614 power transistor TRANSISTOR 612 128KHz cellular signal amplifier circuit diagram

    6900K6

    Abstract: No abstract text available
    Text: 6900K4 Series 20 Watt TWT Amplifier Features • 4.0 TO 18 GHz • Worldwide Support Centers • Octave Bandwidths or Greater • 24 Hour Hotline for customer support • Optional GPIB Control 800 231- 4818 or 1-650-846-3700 • One Year Warranty (Unlimited Hours) • Meets EMC 89/336/EEC


    Original     		PDF 6900K4 89/336/EEC IAMP12 6900K6

    bfy90

    Abstract: No abstract text available
    Text: BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB typ @ 500 MHz, 5v, 2.0 mA, • 1.3 GHz Current-Gain Bandwidth Product @ 25mA IC 2 • 1 Power Gain, GPE = 19 dB (typ) @ 200 MHz


    Original     		PDF BFY90 To-72 bfy90

    bfy90

    Abstract: transistor amplifier VHF/UHF BFY90 Data
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 BFY90 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA, •


    Original     		PDF BFY90 To-72 BFY90 transistor amplifier VHF/UHF BFY90 Data

    DS11

    Abstract: DT456P hs sot223 transistor 614
    Text: DT456P VISHAY P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /l i t e w î i I P O W E R S E M IC O N D Ü C T O R I Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance


    OCR Scan     		PDF DT456P OT-223 OT-223 DT456P DS11 hs sot223 transistor 614

    on 614 power transistor

    Abstract: No abstract text available
    Text: DTC143ZSA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in SPT (SC-72) package DTC143ZSA (SPT) a built-in bias resistor allows inverter circuit configuration without external input resistors 2 t 0.2 n / bias resistor consists of a thin-film


    OCR Scan     		PDF DTC143ZSA SC-72) DTC143ZSA on 614 power transistor

    143-E

    Abstract: D143EK H200
    Text: DTD143EK Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in an SMT3 (SMT, SC-59) package DTD143EK (SMT3) package marking: DTD143EK; F23 a built-in bias resistor allows inverter circuit configuration without external input resistors


    OCR Scan     		PDF DTD143EK SC-59) DTD143EK; DTD143EK 143-E D143EK H200

    Q62702-C2256

    Abstract: 133 MARKING
    Text: SIEMENS BCR 133 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^IO kQ , R2=10kiî Type Marking Ordering Code BCR 133 WCs Pin Configuration Q62702-C2256 1=B Package 2=E 3=C SOT-23


    OCR Scan     		PDF Q62702-C2256 OT-23 Q62702-C2256 133 MARKING

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M EDIU M POWER DARLINGTON TRANSISTOR FMMT614 ISSUE 2 - FEBRUARY 1996_ _ FEATURES * h FE up to 5k at lc= 5 0 0 m A * Fast sw itc h in g * L o w v cE sati at H ig h lc P A R T M A R K IN G D E T A IL S - 614 ABSOLUTE M A X IM U M RATINGS.


    OCR Scan     		PDF FMMT614 Tamtp25 500mA, 100mA, 100mHz 100nA, 300ns.

    150X1

    Abstract: No abstract text available
    Text: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7002 OT-23 VNDS06 150X1, 150X1

    2N6903

    Abstract: No abstract text available
    Text: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive


    OCR Scan     		PDF T0-205AF 00S4702 2N6903