smd marking 911 zener
Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.
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M5263B,
ZMM5264B,
ZMM5265B,
ZMM5266B,
ZMM5267B,
ZMM56,
ZMM62,
ZMM68,
ZMM75,
smd marking 911 zener
d3g smd
NPN Transistor smd code LY 83
marking codes transistors a8 sot-23
TRANSISTOR SMD MARKING CODE s2a
1045ct mosfet
SOD-123 a18
W06* MARKING smd code
KBJ 3580
6045pt
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 940 nm, 80 W cw JDL-BAB-30-19-940-TE-80-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers
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JDL-BAB-30-19-940-TE-80-2
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1PMT5918B
Abstract: diode ZENER 927 1PMT5913B 1PMT5914B 1PMT5915B 1PMT5916B 1PMT5917B 1PMT5919B 1PMT5956B MSC0995
Text: POWERMITE 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 3.0 WATT Zener Diodes 1PMT5913B thru 1PMT5956B DESCRIPTION ® In Microsemi's Powermite surface mount package, these zener diodes provide power-handling capabilities (3.0 WATTS) found in larger packages.
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1PMT5913B
1PMT5956B
DO-216
MSC0995
1PMT5918B
diode ZENER 927
1PMT5913B
1PMT5914B
1PMT5915B
1PMT5916B
1PMT5917B
1PMT5919B
1PMT5956B
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077Y
Abstract: RTXP 18 60255-21-1 overcurrent relay inverse normal curves 001-BEN 20 kv switchgear RTXP 24 RHGS 077ya 003-BEN RTXP18
Text: 9ROWDJH UHVWUDLQW RYHUFXUUHQW UHOD\ DQG SURWHFWLRQ DVVHPEOLHV 5;,6. + DQG 5$,6. 1MRK 509 033-BEN Page 1 Issued: September 2001 Changed since: June 1999 Data subject to change without notice SE970171 (SE970896) )HDWXUHV • Voltage restraint overcurrent stage with five
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033-BEN
SE970171)
SE970896)
315-B
315-C
003-AEN
003-BEN
004-BEN
001-BEN
077Y
RTXP 18
60255-21-1
overcurrent relay inverse normal curves
001-BEN
20 kv switchgear
RTXP 24 RHGS
077ya
003-BEN
RTXP18
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diode ZENER 927
Abstract: diode 913b 1PMT5918B diode MARKING CODE 917 954 zener 1N5913B 1N5956B 1PMT5913B 1PMT5914B 1PMT5956B
Text: 1PMT5913Be3 thru 1PMT5956Be3 POWERMITETM 3.0 WATT Zener Diodes SCOTTSDALE DIVISION APPEARANCE DO-216 WWW . Microsemi .C OM DESCRIPTION This surface mountable 3.0 W Zener diode series in the JEDEC DO-216 package is similar in electrical features to the JEDEC registered 1N5913B
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1PMT5913Be3
1PMT5956Be3
DO-216
1N5913B
1N5956B
1PMT5913B
1PMT5956B
diode ZENER 927
diode 913b
1PMT5918B
diode MARKING CODE 917
954 zener
1N5913B
1PMT5914B
1PMT5956B
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939 pinout
Abstract: JDSU pump laser DIODE 914 yb 939 B 912 JDSU laser diode
Text: COMMUNICATIONS COMPONENTS Uncooled Multi-Mode Pump Module 4900 Series Key Features • High output power up to 8 W • 105 µm aperture • 0.22 NA • Isolated electrical contacts • High reliability Applications • Er/Yb co-doped, double-clad fiber amplifiers
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498-JDSU
49-3940-6000-B
49-ABC123
5378-JDSU
4900PUMP
939 pinout
JDSU pump laser
DIODE 914
yb 939
B 912
JDSU laser diode
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Untitled
Abstract: No abstract text available
Text: APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT29F80J
370ns
OT-227
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Untitled
Abstract: No abstract text available
Text: APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT29F80J
370ns
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APT29F80J
Abstract: MIC4452
Text: APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT29F80J
370ns
APT29F80J
MIC4452
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step recovery diode application
Abstract: MA44600 step recovery diodes MA43002-91 ODS-93 MA43000 MA43543 MA43592 "Step Recovery Diode" step recovery diode
Text: RoHs Compliant Silicon Step Recovery Diodes Features Absolute Maximum Ratings @ TA=+25 °C • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHs Compliant Description and Applications
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MA44600
MA43000,
step recovery diode application
step recovery diodes
MA43002-91
ODS-93
MA43000
MA43543
MA43592
"Step Recovery Diode"
step recovery diode
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Untitled
Abstract: No abstract text available
Text: MITEQ AM-1631 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 200–1000 AM-1631-1000 37 0.5 2.0:1 50/50 3.6 27 15 320 15-2 200–2000 AM-1631-2000 37 1 2.0:1 50/50
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AM-1631
AM-1631-1000
AM-1631-2000
AM-1631-2500
390staff,
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DIODE 206 1334
Abstract: No abstract text available
Text: MITEQ AM-1645 AMPLIFIER FREQUENCY MHz 200–2000 MODEL NUMBER GAIN (dB) (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) AM-1645 26 4 2.0:1 50/50 2 15 20 29 19 28 18 P1dB 150 2 27 26 17 16 15 25 14 13
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AM-1645
DIODE 206 1334
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MSIV-TIN32.768kHz
Abstract: SX1555-R-32.768KHZ
Text: S PT201A SP POCSAG Pager Controller/LCD Driver OCT. 05, 2001 Version 1.0 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPT201A
MSIV-TIN32.768kHz
SX1555-R-32.768KHZ
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Untitled
Abstract: No abstract text available
Text: UNIVERSAL MICROELECTRONIC ST E D B ^3015 " p - 5 7 . j { GQQüQaif b • INPUT SPECIFICATIONS ¡¡ » J j V ' 4 ^ A Input Voltage Range, 12V. 24V . 48V . . Input Filter. Reverse Voltage Protection.
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2-36V
4-72V
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um1214
Abstract: UM1205 927 DIODE UM1201 UM1202 UM1211 UM1212 UM1213 UM1221 diode 927
Text: UNIVERSAL MICROELEC TRON IC ETE D = i3 b 3 a n GQQQQEtf t WÊ ii INPUT SPECIFICATIONS Input Voltage Range, 12V. 24V. 48V . . Input Filter. . Reverse Voltage Protection.
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-12-36V
4-72V
um1214
UM1205
927 DIODE
UM1201
UM1202
UM1211
UM1212
UM1213
UM1221
diode 927
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927 DIODE
Abstract: UM723 UM722 UM724 UM701 UM702 UM703 UM704 UM705 UM712
Text: UNIVERSAL ttlCRQELECTRONIC oaocioiö □ E'ÌE » INPUT SPECIFICATIONS Input Voltage Range, 1 2 V . 2 4 V .— 48 V . Input F ilter-— ••• 3 Reverse Voltage Protectiorf . -9-27V .12-36V •.
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2-36V-72
UM724
UM725
927 DIODE
UM723
UM722
UM701
UM702
UM703
UM704
UM705
UM712
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Untitled
Abstract: No abstract text available
Text: Texas Optoelectronics, Inc. TIES13, TIES13A Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Efficiency • Hemispherically Shaped Chips with Diameter of 36 Mils • Spectrally Matched to Silicon Sensors . . . Peak Emission at 9 30 nm
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TIES13,
TIES13A
S70L235)
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Untitled
Abstract: No abstract text available
Text: bbSBTBl 002bflfl5 4b7 • APX N AUER PHILIPS/DISCRETE 1N821 to 1N829 1N821A to 1N 829A b^E J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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002bflfl5
1N821
1N829
1N821A
DO-34
1N821;
1N823;
1N825;
1N827;
1N829;
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1N821
Abstract: N821 1N821A 1N825 N821A DIODE 1N825 1N827A 1N823 1N827 1N829
Text: • bL53T31 002L.flfl5 Mb? H A PX N AMER PHILIPS/DISCRETE b^E 1N821 to 1N829 1N821A to 1N829A J> VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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1N821
1N829
1N821A
1N829A
DO-34
1N823;
1N825;
1N827;
1N829;
DO-34
N821
1N825
N821A
DIODE 1N825
1N827A
1N823
1N827
1N829
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1N821
Abstract: 1N829 1N825 1N821A 1N823 1N827 1N829A philips 1n823 si10010
Text: SbE philips T> 711DÖEb OOMG'ìBS TTT • PHIN 1N821 to 1N829 1N821A to 1N829A sbE D international m VOLTAGE REFERENCE DIODES Voltage reference diodes in a DO-34 envelope. They have a very low temperature coefficient and are primarily intended for use as voltage reference sources in measuring instruments such as digital
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1N821
1N829
1N821A
1N829A
DO-34
1N821;
1N823;
1N825;
1N827;
1N829;
1N825
1N823
1N827
philips 1n823
si10010
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ic mm74c926
Abstract: circuit diagram of IC MM74C926 mm74c925 mm74c926 pin diagram of IC MM74C926 4-DIGIT counter with 7-SEGMENT DISPLAY MM74C928 DS75492 MM74C925N MM74C926N
Text: Revised January 1999 S E M I C O N D U C T O R TM MM74C925 • MM74C926 • MM74C927 • MM74C928 4-Digit Counters with Multiplexed 7-Segment Output Drivers General Description T he M M 74C 925, M M 74C 926, M M 74C 927 and M M 74C 928 C M O S counters consist of a 4-digit counter, an internal o ut
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MM74C925
MM74C926
MM74C927
MM74C928
MM74C925,
MM74C926,
MM74C927
ic mm74c926
circuit diagram of IC MM74C926
mm74c925
mm74c926
pin diagram of IC MM74C926
4-DIGIT counter with 7-SEGMENT DISPLAY
DS75492
MM74C925N
MM74C926N
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transistor c925
Abstract: DIODE C921
Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses
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IRGBC30KD2-S
-10ns
D020717
SMD-220
C-928
transistor c925
DIODE C921
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diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
X10-3
poss75042
SJ4IIL230)
JL3110209)
0L19O)
diode in 5401
for APD bias high-voltage
104 Ceramic Disc Capacitors 100v
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IC 74C926
Abstract: 74c926 74C925 74c927 74c928 ic mm74c926 2digit display led counter driver ic 74c925 mm74c925n mm74c925
Text: Revised January 1999 SEMICONDUCTOR TM MM74C925 • MM74C926 • MM74C927 • MM74C928 4-Digit Counters with Multiplexed 7-Segment Output Drivers General Description back LOW only w hen the co un ter is reset. Thus, this is a 31/2-digit counter. The M M 74C 925, M M 74C926, M M 74C 927 and M M 74C 928
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MM74C925
MM74C926
MM74C927
MM74C928
74C926,
IC 74C926
74c926
74C925
74c927
74c928
ic mm74c926
2digit display led counter driver
ic 74c925
mm74c925n
mm74c925
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