Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 940 nm, 80 W cw JDL-BAB-30-19-940-TE-80-2.0 Features: Applications: • High laser power • Pumping of solid-state lasers and fiber lasers
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JDL-BAB-30-19-940-TE-80-2
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APT29F80J
Abstract: MIC4452
Text: APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits
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APT29F80J
370ns
APT29F80J
MIC4452
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step recovery diode application
Abstract: MA44600 step recovery diodes MA43002-91 ODS-93 MA43000 MA43543 MA43592 "Step Recovery Diode" step recovery diode
Text: RoHs Compliant Silicon Step Recovery Diodes Features Absolute Maximum Ratings @ TA=+25 °C • Low Transition Times • Tight Capacitance Ranges • High Voltage and Low Thermal Resistance for Higher Input Power • Lead-Free RoHs Compliant Description and Applications
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MA44600
MA43000,
step recovery diode application
step recovery diodes
MA43002-91
ODS-93
MA43000
MA43543
MA43592
"Step Recovery Diode"
step recovery diode
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BF964S
Abstract: BF964 BF964SA BF964SB
Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes
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BF964S
BF964S
D-74025
20-Jan-99
BF964
BF964SA
BF964SB
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BF964S
Abstract: BF964SA BF964SB J02-1
Text: BF964S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF TV-tuners. Features D Integrated gate protection diodes
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BF964S
BF964S
D-74025
20-Jan-99
BF964SA
BF964SB
J02-1
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38N100Q2
Abstract: No abstract text available
Text: IXFL 38N100Q2 HiPerFETTM Power MOSFETs IXFL 38N100Q2 VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 1000
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38N100Q2
38N100Q2
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MAX6485
Abstract: No abstract text available
Text: Advance Technical Information IXTQ 160N085T IXTA 160N085T IXTP 160N085T Trench Gate Power MOSFET VDSS ID25 = 85 V = 160 A Ω = 6.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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160N085T
160N085T
O-220
O-263
MAX6485
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diode zener 5v3
Abstract: 3812 ma 916 E176177
Text: S 40 WATT DC-DC CONVERTERS US Features 40W Isolated Output • Fixed 350KHz Switching Frequency 2" x 2" Six-Sided Shield Metal Case • Continuous Short Circuit Protection Regulated Outputs • External Output Trimming Function Efficiency to 92% NEW NEW NEW
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350KHz
EC7C-12S25
EC7C-12S33
EC7C-12S05
EC7C-12S12
EC7C-12S15
EC7C-12D12
EC7C-12D15
EC7C-12D3305
EC7C-12T3312
diode zener 5v3
3812
ma 916
E176177
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Untitled
Abstract: No abstract text available
Text: MA3404K10000000 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The MA3404K is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA3404K10000000
MA3404K
D032610
OT-23
3000pcs
15000pcs
OT-23/25
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Untitled
Abstract: No abstract text available
Text: SN54LS670, SN74LS670 4-BY-4 REGISTER FILES WITH 3-STATE OUTPUTS SDLS193 – MARCH 1974 – REVISED MARCH 1988 Copyright 1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments
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SN54LS670,
SN74LS670
SDLS193
65530m,
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403CNQ
Abstract: 403CNQ080 403CNQ090 403CNQ100 IRFP460 SL 2042
Text: Bulletin PD-2.214 rev. E 05/02 403CNQ. R SERIES SCHOTTKY RECTIFIER 400 Amp TO-244AB Major Ratings and Characteristics Characteristics Description/Features The 403CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
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403CNQ.
O-244AB
403CNQ
IRFP460
403CNQ080
403CNQ090
403CNQ100
IRFP460
SL 2042
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Untitled
Abstract: No abstract text available
Text: UNIVERSAL MICROELECTRONIC ST E D B ^3015 " p - 5 7 . j { GQQüQaif b • INPUT SPECIFICATIONS ¡¡ » J j V ' 4 ^ A Input Voltage Range, 12V. 24V . 48V . . Input Filter. Reverse Voltage Protection.
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2-36V
4-72V
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Untitled
Abstract: No abstract text available
Text: UNIVERSAL ttICRQELECTRONIC QOOQQlö □ E'ÌE D INPUT SPECIFICATIONS Input Voltage Range, 1 2 V . 2 4 V . 4 8 V . . input F ilte r -— . — . Reverse Voltage Protection-—. . -9-27V . 12-36V
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-9-27V
2-36V
24-/2V
500/t
UM701
UM702
UM703
UM704
UM705
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Untitled
Abstract: No abstract text available
Text: Texas Optoelectronics, Inc. TIES13, TIES13A Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Efficiency • Hemispherically Shaped Chips with Diameter of 36 Mils • Spectrally Matched to Silicon Sensors . . . Peak Emission at 9 30 nm
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TIES13,
TIES13A
S70L235)
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diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
X10-3
poss75042
SJ4IIL230)
JL3110209)
0L19O)
diode in 5401
for APD bias high-voltage
104 Ceramic Disc Capacitors 100v
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IC 74C926
Abstract: 74c926 74C925 74c927 74c928 ic mm74c926 2digit display led counter driver ic 74c925 mm74c925n mm74c925
Text: Revised January 1999 SEMICONDUCTOR TM MM74C925 • MM74C926 • MM74C927 • MM74C928 4-Digit Counters with Multiplexed 7-Segment Output Drivers General Description back LOW only w hen the co un ter is reset. Thus, this is a 31/2-digit counter. The M M 74C 925, M M 74C926, M M 74C 927 and M M 74C 928
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MM74C925
MM74C926
MM74C927
MM74C928
74C926,
IC 74C926
74c926
74C925
74c927
74c928
ic mm74c926
2digit display led counter driver
ic 74c925
mm74c925n
mm74c925
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k 118
Abstract: OPR5200 OPR5500
Text: • Product Bulletin OPR5200 August 1996 b7Tfl 5fl O 0Cm2aL.3 @.OPI§K HS3 Miniature Surface Mount LED OPR52QO TOLERANCE IS ± .005 ± .13 Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Stackable on 2 mm centers • Vertical or horizontal mounting
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OPR5200
OPR52QO
0PC225
k 118
OPR5500
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SRD diode
Abstract: step recovery diodes
Text: MA44600 Series Step Recovery Diodes F p iitiir p c • LOW TRANSITION TIMES ■ TIGHT CAPACITANCE RANGES ■ HIGH VOLTAGE AND LOW THERMAL RESISTANCE FOR HIGHER INPUT POWER Applications The MA44600 series of Step Recovery diodes is designed for use in low and moderate power multipliers with output
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MA44600
MIL-S-19500,
MIL-STD-202
MIL-STD-750
SRD diode
step recovery diodes
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Untitled
Abstract: No abstract text available
Text: DEVELOPMENT DATA BTV160DV SERIES This data sheet contains advance information and _are subject to change without notice. n 'a m e r p h i l i p s /d i s c r e t e ObE D • ’bbS3*i31 O O i n D S S ■ FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE
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BTV160DV
1200R
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL POWER MOSFETS SSD2104 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSD2104
00A///S
to150Â
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VP0635N5
Abstract: VP0635N3
Text: V P 06D Çjf Supertex inc. /ps. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t Order Number / Package BVDss ^ ^D S O N | I q (ON] b v dgs (max (min) TO-39 TO-92 TO-220 -350V 250 -0.4A VP0635N2 VP0635N3 VP0635N5
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VP0635N2
VP0640N2
VP0635N3
VP0640N3
O-220
VP0635N5
VP0640N5
VP0635ND
VP0640ND
-350V
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VP0635N3
Abstract: VP0640N5 VP0640N2
Text: VP 06D t ì ì S u p e r t e x inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS/ ^DS<ON ' d ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -350V 25£i -0.4A VP0635N2 VP0635N3
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VP0635N2
VP0640N2
VP0635N3
VP0640N3
O-220
VP0635N5
VP0640N5
VP0635ND
VP0640ND
-350V
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Untitled
Abstract: No abstract text available
Text: •701 TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES Isolated Case fo r Shielding Useful from Audio to Microwave Frequencies Typical Photocurrent Gain > 600 Active Area of 4.5 X 10"3 cm2 Diameter = 30
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TIED59
0-13W/V
TIED59
9J3PL375)
IL235)
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MP3202
Abstract: mos fet module silicon ld 2.5a
Text: POWER MOS FET MODULE MP3202 SILICON N CHANNEL MOS TYPE L2-7r-MOSm 3 IN 1 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER HIGH SPEED SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 20 .2 ± 0.2 • 4-Volt Gate Drive Available
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MP3202
MP3202
mos fet module silicon
ld 2.5a
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