Untitled
Abstract: No abstract text available
Text: AO4924 Asymmetric Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4924
AO4924
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Untitled
Abstract: No abstract text available
Text: AO4924 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4924 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4924
AO4924
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AOD9600
Abstract: AOD1N60
Text: AOD1N60 / AOU1N60 1.3A, 600V N-Channel MOSFET formerly engineering part number AOD9600 General Description Features The AOD1N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOD1N60
AOU1N60
AOD9600
O-252
O-251
AOD9600
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AOD2N60
Abstract: No abstract text available
Text: AOD2N60 2A, 600V N-Channel MOSFET General Description Features The AOD2N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with
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AOD2N60
AOD2N60
O-252
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AOD3N50
Abstract: Omega 2a 500v
Text: AOD3N50 3A, 500V N-Channel MOSFET General Description Features The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss and Crss along with
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AOD3N50
AOD3N50
O-252
Omega 2a 500v
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AO4922
Abstract: ao4922L
Text: AO4922 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description The AO4922 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4922
AO4922
AO4922L
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Untitled
Abstract: No abstract text available
Text: AO4928 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4928 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC
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AO4928
AO4928
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Untitled
Abstract: No abstract text available
Text: AO4926 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4926 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4926
AO4926
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Untitled
Abstract: No abstract text available
Text: AO4922 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4922 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4922
AO4922
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Untitled
Abstract: No abstract text available
Text: AO4922 Asymmetric Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4922 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A monolithically integrated Schottky
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AO4922
AO4922
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Untitled
Abstract: No abstract text available
Text: MONOGRAM ® MADE IN Temperature/Process Meters & Controllers USA DPi32 Series $ 150 Basic Unit i/32 i/8 i/16 For More Information omega.com/specs/iseries ߜ Extended 5-Year Warranty ߜ Both RS-232 and RS-485 ߜ 2 Control or Alarm Outputs, Choice of dc at No Extra Charge
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DPi32
RS-232
RS-485
RS-485
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Untitled
Abstract: No abstract text available
Text: AO4940 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4940 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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AO4940
AO4940
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5-2736
Abstract: No abstract text available
Text: AO4940 Asymmetric Dual N-Channel MOSFET 1234566576 General Description Product Summary The AO4940 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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AO4940
AO4940
5-2736
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Untitled
Abstract: No abstract text available
Text: AO4940 Asymmetric Dual N-Channel MOSFET SRFET General Description Product Summary The AO4940 uses advanced trench technology to provide excellent RDS ON and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A
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AO4940
AO4940
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Untitled
Abstract: No abstract text available
Text: ⁄8 DIN Ultra High Performance Meter 1 DP41-B 595 $ DP41-B MADE IN USA Patented Universal Inputs: DC Voltage/Current, T/C, RTD, and Strain ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ ߜ Accuracy: ±0.005% rdg 6-Digit Color Changing LED Display Up to 166 Readings Per Second
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DP41-B
RS-232/RS-485
DP41-B.
DP40B-R)
DP40B-A)
RS-232
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Untitled
Abstract: No abstract text available
Text: AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V
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AON7410
AON7410
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AO4496
Abstract: AO4496L EAR12
Text: AO4496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4496/L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically
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AO4496
AO4496/L
AO4496
AO4496L
-AO4496L
EAR12
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AO4496
Abstract: AO4496L
Text: AO4496 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4496/L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a DC-DC converter application. AO4496 and AO4496L are electrically
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AO4496
AO4496/L
AO4496
AO4496L
-AO4496L
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AON7410
Abstract: No abstract text available
Text: AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. VDS (V) = 30V
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AON7410
AON7410
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ao4496
Abstract: diode 35v 10a
Text: AO4496 30V N-Channel MOSFET General Description Product Summary The AO4496 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a DC-DC converter application. VDS (V) = 30V (VGS = 10V) ID = 10A
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AO4496
AO4496
diode 35v 10a
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ao4496
Abstract: No abstract text available
Text: AO4496 General Description Product Summary The AO4496 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a DC-DC converter application. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 19.5m1 (VGS = 10V)
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AO4496
AO4496
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AO4496
Abstract: No abstract text available
Text: AO4496 General Description Product Summary The AO4496 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for use as a DC-DC converter application. VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 19.5mΩ (VGS = 10V)
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AO4496
AO4496
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AON7410
Abstract: AON7410l
Text: AON7410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7410/L uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications.
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AON7410
AON7410/L
100com
AON7410
AON7410l
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AO8820
Abstract: AO4707 AO8820L schottky 8a
Text: AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4707 uses advanced trench technology to provide excellent R DS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC
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AO4707
AO4707
AO8820
AO8820L
AO8820L
0E-01
0E-02
0E-03
0E-04
schottky 8a
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