part number decoder toshiba dram
Abstract: MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram
Text: Systems in Silicon Designing with DRAM AMD Embedded Processor Division, Designing with DRAM Overview Designing with DRAM Agenda Systems in Silicon • What are DRAMs? – The transistor level – How they differ from SRAM and FLASH • Bus Cycle Review – 16-bit
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16-bit
32-bit
Am186ED
50-ns
part number decoder toshiba dram
MOSYS eDRAM
LG concurrent RDRAM
"embedded dram" nec
ibm edram
samsung dram
sldram
MoSys sram embedded
mosys rdram
samsung cdram
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IBM025161LG5D60
Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Text: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.
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MB81141621
MB81141622
MB81G8322
MB81116421
TC59R1608
2ns500MHz
TC59R0808
IBM025161LG5D60
gm72v16821
MD908
KM48S2020
TC59R1809
GM72V1682
KM4232W259Q60
KM416S1120A
IBM025171LG5D-70
KM44S4020AT
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Untitled
Abstract: No abstract text available
Text: SMUUUUUFU0U01 November 30, 2000 Revision History • November 30, 2000 Modified supply current profile specifications on page 8. • October 19, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SMUUUUUFU0U01
512/576MByte
16Mx16/18
184-pin
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RG25
Abstract: OKI RDRAM OKI RDRAM 18
Text: SMU128UBUAUUU SMU144UBUAUUU March 2, 2001 Revision History • March 2, 2001 Datasheet updated. • July 11, 2000 Corrected table on page 10. • June 12, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SMU128UBUAUUU
SMU144UBUAUUU
128/144MByte
8Mx16/18
160-pin
RG25
OKI RDRAM
OKI RDRAM 18
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OKI hitachi RDRAM
Abstract: No abstract text available
Text: SMUUUUUFUAU01 May 2, 2000 Revision History • May 2, 2000 Modified page 12. • April 24, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191
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SMUUUUUFUAU01
128/144MByte
8Mx16/18
184-pin
OKI hitachi RDRAM
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HD6417709A
Abstract: hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020
Text: INDEX Subjects Products Suppliers Page 1. CPU & PERIPHERAL Embedded Processor Microcontroller CPU Peripherals DSP Voice Recognition Motorola / NS / Hitachi / Intel Atmel / Intel / Motorola / Hitachi / NS / Microchip NS / Intersil / Intel Motorola Sensory 2-10
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RSC-300
HD6417709A
hd64f7044
GC80503CS166EXT
GC80503CSM66266
pic16f877 sine pwm
lcd interface with at89c2051
intel 80486dx4
80386extc
HD6417707
HD6417020
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45800
Abstract: No abstract text available
Text: SMUUUUUFU0U02 April 14, 2000 Revision History • April 14, 2000 Modified datasheet description on page 2. • February 16, 2000 Modified module access speed on page 18. • December 8, 1999 Modified page 18 and functional diagram on page 2. • September 24, 1999
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SMUUUUUFU0U02
64/72MB
45800
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45800
Abstract: No abstract text available
Text: SMART SMUUUUUUUUU01 Modular Technologies OBSOLETE Revision History • March 27, 2000 Datasheet obsoleted. • February 16, 2000 Modified module access speed on page 18. • December 8, 1999 Modified page 13 and functional diagram on page 2. • September 23, 1999
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SMUUUUUUUUU01
604-39929N
45800
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NEC c317
Abstract: gm73v1892 mt 6252 Resistor Network Rpack 10K transistor NEC D 882 p CRA3A4E103J TP1017 eeprom programmer schematic 24c08 LPT22 m21cr
Text: TNETX4090 Design Manual SPWU023 October 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that
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TNETX4090
SPWU023
NEC c317
gm73v1892
mt 6252
Resistor Network Rpack 10K
transistor NEC D 882 p
CRA3A4E103J
TP1017
eeprom programmer schematic 24c08
LPT22
m21cr
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IBM "embedded dram"
Abstract: m5m4v4169 Intel 1103 DRAM Nintendo64 IBM98 toshiba fet databook dynamic memory controler MOSYS eDRAM "1t-sram" MoSys
Text: ABSTRACT MODERN DRAM ARCHITECTURES by Brian Thomas Davis Co-Chair: Assistant Professor Bruce Jacob Co-Chair: Professor Trevor Mudge Dynamic Random Access Memories DRAM are the dominant solid-state memory devices used for primary memories in the ubiquitous microprocessor systems of
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conn95]
64-Mbit
Woo00]
EE380
class/ee380/
Wulf95]
Xanalys00]
Yabu99]
IBM "embedded dram"
m5m4v4169
Intel 1103 DRAM
Nintendo64
IBM98
toshiba fet databook
dynamic memory controler
MOSYS eDRAM
"1t-sram"
MoSys
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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OCR Scan
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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