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    OH MARKING DIODE Search Results

    OH MARKING DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    OH MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N6688

    Abstract: 1N6689 MIL-STD-129 1N6689US
    Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,


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    PDF MIL-PRF-19500/627A MIL-S-19500/627 1N6688, 1N6689, 1N6688US, 1N6689US, MIL-PRF-19500. 1N6688 1N6689 MIL-STD-129 1N6689US

    SL5010

    Abstract: SL5010P piezo ceramic transducer piezoceramic
    Text: SL5010P Semiconductor TONE RINGER WITH BRIDGE DIODE Description The SL5010P is a bipolar IC designed to replace the mechanical bell in telephone sets. It generates two analog tones, and a warble frequency to drive either directly a piezo-ceramic transducer or a small loudspeaker in response to ringing signal on the telephone line.


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    PDF SL5010P SL5010P SL5010 60mSec. 60mSec KSI-W013-000 SL5010 piezo ceramic transducer piezoceramic

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes 225 mW SOT-23 Surface Mount LBZX84C2V4LT1 Series FEATURE ƽMaximum case temperature for 3 soldering purposes: 260°C for 10 seconds ƽPb-Free package is available. 1 2 ORDERING INFORMATION Package Shipping


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    PDF OT-23 LBZX84C2V4LT1 LBZX84CxxxLT1 OT-23 3000/Tape LBZX84CxxxLT1G LBZX84CxxxLT3

    1N5466B JANTXV

    Abstract: 1N5466B JANTX 1N5472B+JAN 1N5469B 1N5476B 1N5461B 1N5461C 1N5462B 1N5476C b-210-51
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 September 1999 INCH-POUND MIL-PRF-19500/436A 28 June 1999 SUPERSEDING MIL-S-19500/436 USAF 28 August 1970 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR


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    PDF MIL-PRF-19500/436A MIL-S-19500/436 1N5461B 1N5476B, 1N5461C 1N5476C MIL-PRF-19500. 1N5466B JANTXV 1N5466B JANTX 1N5472B+JAN 1N5469B 1N5476B 1N5462B 1N5476C b-210-51

    QML-19500

    Abstract: 1N5139A 1N5140A 1N5141A 1N5142A 1N5143A 1N5148A
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 November 1999 INCH-POUND MIL-PRF-19500/383B 6 August 1999 SUPERSEDING MIL-S-19500/383A 2 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR


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    PDF MIL-PRF-19500/383B MIL-S-19500/383A 1N5139A 1N5148A MIL-PRF-19500. QML-19500 1N5140A 1N5141A 1N5142A 1N5143A 1N5148A

    1N1149

    Abstract: 1N1149 JAN 1N1147 1N1147 JAN
    Text: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments


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    PDF MIL-S-19500/254B MIL-S-19500/254A 1N1147 1N1149, MIL-PRF-19500. 1N1149 1N1149 JAN 1N1147 JAN

    Zener diode smd marking S4

    Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
    Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.


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    PDF R1407, R1401, Zener diode smd marking S4 DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz

    j172

    Abstract: D1NJ10 AX057
    Text: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>


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    PDF D1NJ10 AX057 waveli50Hz j172 D1NJ10 AX057

    Trr-35nS

    Abstract: MARKING JM S3L20U DIODE 3LU fly wheel S3L20 diode super fast marking code TS trr35ns diode marking code UH
    Text: Super Fast Recovery Diode Axial Diode OUTLINE S3L20U U n it : m m Package : AX14 W e ig h t l.O Ó R ÍT y p 200V 3A Feature 26.5 • s v -rx • Low Noise • trr=35ns • tnr=35ns MA N Main Use * KtflliAiKliSM Marking • Switching Regulator • 7 5 'T /n - J b


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    PDF S3L20U S3L20U CJ533-1 Trr-35nS MARKING JM DIODE 3LU fly wheel S3L20 diode super fast marking code TS trr35ns diode marking code UH

    S2L60

    Abstract: loa marking code
    Text: Super Fast Recovery Diode Axial Diode OUTLINE S2L60 Unit : mm Package : AX10 W eight O .ffig iT y p 6 0 0 V 1 .5A Feature 26.5 • r a M ± FRD • High Voltage Super FRD • ñ S 'íX • Low Noise • trr=50ns • trr=50ns .1 cR4 26.5 -O . - 2 - * ftm iiA iK m


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    PDF S2L60 S2L60 CJ533-1 loa marking code

    J533

    Abstract: S3L60 fly wheel J533-1
    Text: Super Fast Recovery Diode Axial Diode OUTLINE S3L60 Unit : mm Package : AX14 W eight l.OÓRÍTyp 6 0 0 V 2 .2 A Feature 26.5 • r a M ± FRD • High Voltage Super FRD •ñ S 'í X • Low Noise • trr=50ns • trr=50ns MA 26.5 -L i. N * KtflliAiKliSM


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    PDF S3L60 S3L60 J533-1 J533 fly wheel J533-1

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 16DL2CZ47A, 16FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 16DL2CZ47A, 16FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current


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    PDF 16DL2CZ47A, 16FL2CZ47A 16DL2CZ47A 16FL2CZ47A 961001EAA2'

    2LU 07

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Axial Diode OUTLINE M im S2L20U Unit ! mm Package : AX10 Weight 0.65« T yp 2 0 0 V 1.5A Feature 26.5 • trr=35ns • Low Noise • trr=35ns • OA, • ifflÄ. FA • • • • 26.5 -L -J O . U> M <b\A 2 * t a ® * '« « »


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    PDF S2L20U J533-1) 2LU 07

    DIODE 20FL2C

    Abstract: No abstract text available
    Text: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V


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    PDF 20DL2C48A U20DL2C48A 20FL2C48A U20FL2C48A 20DL2C48A, U20DL2C48A, 20FL2C48A, 20DL2C48A-20FL2C48A 20DL2C48 DIODE 20FL2C

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±


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    PDF 5011ziEÂ li501

    v174

    Abstract: KDV174
    Text: SEMICONDUCTOR TECHNICAL DATA KDV174 SILICON EPITAXIAL PIN DIODE VHF —UHF BAND RF ATTENUATOR APPLICATION. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : Cr=0.25[pF] TYP. . • Low Series Resistance : rs=7[ß] (TYP.). • Designed for Low Inter Modulation.


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    PDF 10juA 100MHz KDV174 v174 KDV174

    IR LFN

    Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
    Text: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •


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    PDF D1FK70 J532-1) IR LFN D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD

    KIA2431

    Abstract: TSM 1250
    Text: SEMICONDUCTOR KIA2431P/S/T/AP/AS TECHNICAL DATA /AT/BP/BS/BT BIPOLAR LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCES T he KIA2431P/S/T/AP/AS/AT/BP/BS/BT are integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature


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    PDF A243IP/ KIA2431P/S/T/AP/AS/AT/BP/BS/BT KIA2431 TSM 1250

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ?


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    PDF D1FL20U trr-35ns

    smd diode marking UJ

    Abstract: smd marking KD smd marking diode KD smd diode marking code UJ SMD MARKING CODE vk D1FL40
    Text: Super Fast Recovery Diode Single Diode mtmm o u tlin e Package I 1F D1 F L 40 Unit I mm Weight 0.058g Typ A 7 -K -7 -* 400V 0.8A Feature •e y -rx • Small SMD • Low Noise • trr=50ns • trr-5 0ns • /J^ S M D (D°— N — ”<& Main Use • • •


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    PDF D1FL40 trr-50ns J532-1) smd diode marking UJ smd marking KD smd marking diode KD smd diode marking code UJ SMD MARKING CODE vk D1FL40

    Diode smd code H8

    Abstract: smd diode marking U1 SMD MARKING 7G max8022
    Text: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l i n e W eight 0.027tf Typ 30V 1.5A ij'/—K v —? C a th o d e m a rk Feature • 'JvS S M D • S V f=0.36V U nit I mm Package : M1F | h 92 —*<2) • Small SMD • Super-Low Vf=0.36V x i z z h t iv m i


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    PDF J532-1) Diode smd code H8 smd diode marking U1 SMD MARKING 7G max8022

    smd code 2AT

    Abstract: D1FL20U smd code marking 1F marking code 2At marking LZ smd diode SMD MARKING CODE ju SMD MARKING CODE vk fly wheel smd regulator marking VA D1FL20
    Text: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ?


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    PDF D1FL20U trr-35ns j532-1 smd code 2AT D1FL20U smd code marking 1F marking code 2At marking LZ smd diode SMD MARKING CODE ju SMD MARKING CODE vk fly wheel smd regulator marking VA D1FL20

    SMD MARKING CODE tvw

    Abstract: D1FJ4 JILI T-30 SMD MARKING CODE vk smd code marking 1F
    Text: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 1F D1FJ4 U nit I mm Weight 0.058k T yp ii'/—y-?—? 40V 2A Feature • /JvgaSMD QC"—M— • Small SMD • Low lR=0.2mA • Resistance for thermal run-away • lR=0.2mA Main Use • D C /D C D > A -ÿ


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    PDF L058g tt50I J532-1) SMD MARKING CODE tvw D1FJ4 JILI T-30 SMD MARKING CODE vk smd code marking 1F

    TLP521

    Abstract: TLP521-1 toshiba TLP521-4 Toshiba tlP521 Photocoupler TLP521-1GB TLP521-2 gr TLP521 8 TLP521 gr tlp521 Photocoupler DIODE 2nu
    Text: TO SH IBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.


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    PDF TLP521 TLP521-1, TLP521-2, TLP521-4 TLP521-2 TLP521-4 UL1577, TLP521-1 toshiba TLP521-4 Toshiba tlP521 Photocoupler TLP521-1GB TLP521-2 gr TLP521 8 TLP521 gr tlp521 Photocoupler DIODE 2nu