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    OF TRANSISTOR AT 30B Search Results

    OF TRANSISTOR AT 30B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    OF TRANSISTOR AT 30B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power and Industrial Semiconductors

    Abstract: No abstract text available
    Text: PSMN003-30P; PSMN003-30B N-channel enhancement mode field-effect transistor Rev. 01 — 23 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


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    PDF PSMN003-30P; PSMN003-30B PSMN003-30P O-220AB) PSMN003-30B OT404 OT404, Power and Industrial Semiconductors

    OF TRANSISTOR AT 30B

    Abstract: No abstract text available
    Text: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B

    OF TRANSISTOR AT 30B

    Abstract: TIP29C cross reference Fairchild Semiconductor tip29
    Text: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C O-220 TIP29 TIP29A TIP29B TIP29C OF TRANSISTOR AT 30B TIP29C cross reference Fairchild Semiconductor tip29

    TIP29

    Abstract: No abstract text available
    Text: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C O-220 TIP29 TIP29A TIP29B TIP29C

    OF TRANSISTOR AT 30B

    Abstract: OF TRANSISTOR tip30 tip30c
    Text: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : TIP30 : TIP30A : TIP30B : TIP30C Collector Emitter Voltage : TIP30


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    PDF TIP30 TIP30/30A/30B/30C) O-220 TIP29/29A/29B/29C TIP30 TIP30A TIP30B TIP30C OF TRANSISTOR AT 30B OF TRANSISTOR tip30 tip30c

    DATASHEET OF TIP29

    Abstract: tip29C OF TIP29 DATASHEET OF TRANSISTOR tip30 TIP29 transistor OF TRANSISTOR tip29 TIP29 Fairchild Semiconductor tip29
    Text: TIP29 SERIES TIP29/29A/29B/29C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complementary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage Symbol : TIP29


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    PDF TIP29 TIP29/29A/29B/29C) O-220 TIP30/30A/30B/30C TIP29 TIP29A TIP29B TIP29C DATASHEET OF TIP29 tip29C OF TIP29 DATASHEET OF TRANSISTOR tip30 TIP29 transistor OF TRANSISTOR tip29 Fairchild Semiconductor tip29

    Untitled

    Abstract: No abstract text available
    Text: BLM7G24S-30BG LDMOS 2-stage power MMIC Rev. 1 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description The BLM7G24S-30BG is a 2-stage power MMIC using NXP’s state of the art Gen7 LDMOS technology. This device is perfectly suited as general purpose driver in the


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    PDF BLM7G24S-30BG BLM7G24S-30BG

    Untitled

    Abstract: No abstract text available
    Text: BUK75/762R7-30B TrenchMOS standard level FET Rev. 02 — 2 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.


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    PDF BUK75/762R7-30B BUK752R7-30B O-220AB) BUK762R7-30B OT404

    BUK762R7-30B

    Abstract: BUK752R7-30B BUK7E2R7-30B
    Text: BUK75/76/7E2R7-30B TrenchMOS standard level FET Rev. 03 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


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    PDF BUK75/76/7E2R7-30B OT404, OT226 BUK762R7-30B BUK752R7-30B BUK7E2R7-30B

    Untitled

    Abstract: No abstract text available
    Text: BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 — 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.


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    PDF BUK95/962R8-30B BUK952R8-30B O-220AB) BUK962R8-30B OT404

    TIP30

    Abstract: DATASHEET OF TRANSISTOR tip30 tip30c TIP30A TIP30B TIP30 transistor OF TRANSISTOR AT 30B OF TRANSISTOR tip30
    Text: TIP30 Series TIP30/30A/30B/30C TIP30 Series(TIP30/30A/30B/30C) Medium Power Linear Switching Applications • Complementary to TIP29/29A/29B/29C TO-220 1 1.Base PNP Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP30 TIP30/30A/30B/30C) TIP29/29A/29B/29C O-220 TIP30 TIP30A TIP30B TIP30C DATASHEET OF TRANSISTOR tip30 tip30c TIP30A TIP30B TIP30 transistor OF TRANSISTOR AT 30B OF TRANSISTOR tip30

    TIP29

    Abstract: DATASHEET OF TIP29 NPN Transistor VCEO 80V 100V OF TRANSISTOR tip30 SWITCHING SYSTEMS INTERNATIONAL TIP29A TIP29B TIP29C
    Text: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C O-220 TIP29 TIP29A TIP29B TIP29C DATASHEET OF TIP29 NPN Transistor VCEO 80V 100V OF TRANSISTOR tip30 SWITCHING SYSTEMS INTERNATIONAL TIP29A TIP29B TIP29C

    TIP29

    Abstract: TIP29A TIP29B TIP29C
    Text: TIP29 Series TIP29/29A/29B/29C TIP29 Series(TIP29/29A/29B/29C) Medium Power Linear Switching Applications • Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C O-220 TIP29 TIP29A TIP29B TIP29C TIP29A TIP29B TIP29C

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    SCR based induction furnace circuit diagram

    Abstract: sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit
    Text: Harris Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


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    PDF AN6182 CA3059 CA3079) CA3079 400Hz. SCR based induction furnace circuit diagram sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit

    11Z12

    Abstract: sprague 11z12 CA3059 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater
    Text: Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


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    PDF AN6182 CA3059 CA3079) CA3079 400Hz. 11Z12 sprague 11z12 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater

    back Tunnel diode

    Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
    Text: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,


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    transistor tip 30c

    Abstract: TIP 152 transistor
    Text: MOTOROLA Order this document by TIP29B/D SEMICONDUCTOR TECHNICAL DATA NPN TIP 29B Com plem entary Silicon Plastic Power Transistors TIP 29C PNP TIP 30B . . . designed for use in general purpose a m p lifie r and sw itch in g a pplications. C ompact T O -22 0 AB package.


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    PDF TIP29B/D TIP29B TIP30B 21A-06 O-220AB transistor tip 30c TIP 152 transistor

    Untitled

    Abstract: No abstract text available
    Text: TIP29 SERIES TIP29/29A/29B/29C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem entary to TIP30/30A/30B/30C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage C ollector Em itter Voltage Sym bol TIP29


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    PDF TIP29 TIP29/29A/29B/29C) TIP30/30A/30B/30C TIP29A TIP29B TIP29C

    transistor tip 30c

    Abstract: No abstract text available
    Text: TIP30 SERIES TIP30/30A/30B/30C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS • C om plem ent to TIP 29/29A/29B/29C ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol :T IP 3 0 Rating Unit - 40 V : TIP30A


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    PDF TIP30 TIP30/30A/30B/30C) 29/29A/29B/29C TIP30A TIP30B TIP30C transistor tip 30c

    Untitled

    Abstract: No abstract text available
    Text: Û2 35b05 000153b 30b • SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection including load dump • Fast demagnetization of inductive loads


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    PDF 35b05 000153b

    NT 407 F TRANSISTOR

    Abstract: SMD code E2 BTS442E2 E3062A 1S42 E3043 Q67060-S6206-A2 Q67060-S6206-A3 ZD11 BTS and MS transistor smd code 404
    Text: I Û235LG5 G0fll53b 30b SIEM ENS PROFET BTS 442 E2 Smart Highside Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation


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    PDF 235b05 000153b O-22QAB/5 Q67060-S6206-A2 CPT05IB5 O-22QAB/5, E3043 E3043 Q67060-S6206-A3 NT 407 F TRANSISTOR SMD code E2 BTS442E2 E3062A 1S42 Q67060-S6206-A2 Q67060-S6206-A3 ZD11 BTS and MS transistor smd code 404

    Untitled

    Abstract: No abstract text available
    Text: • BDT30F BDT30AF; 30BF BDT30CF; 30DF LbS3T31 D011U7B 3 2SE D N AUER PHILIPS/DISCRETE J V SILICON EPITAXIAL POWER TRANSISTORS T " 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base, fo r use in audio output stages and fo r general purpose amplifier and high-speed switching applications.


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    PDF BDT30F BDT30AF; BDT30CF; LbS3T31 D011U7B OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF

    30DF

    Abstract: BDT29BF 30BF BDT29AF BDT29CF BDT29DF BDT29F BDT30AF BDT30CF BDT30F
    Text: • fcifesS3 ‘IBli 0 0 1 ^ 7 3 BDT30F BDT30AF; 30BF BDT30CF; 30DF 3 2SE D N AMER P H I L I P S / D I S C R E T E SILICON EPITAXIAL POWER TRANSISTORS T “" 3 3 - 17 P-N-P silicon power transistor in a SOT-186 envelope with an electrically insulated mounting base,


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    PDF bbS3T31 BDT30F BDT30AF; BDT30CF; OT-186 BDT29F, BDT29AF, BDT29BF, BDT29CF BDT29DF. 30DF BDT29BF 30BF BDT29AF BDT29DF BDT29F BDT30AF BDT30CF