RS-8960
Abstract: diagram of gunn diode RS Microwave Company 747 opamp X-band doppler radar module metal detector using 555 timer gunn diode radar module radar gunn diode 308-017 rs s band doppler mixer
Text: Issued July 1985 003-598 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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X-band doppler radar module
Abstract: RS-8960 308-017 rs metal detector using 555 timer diagram of gunn diode Gunn Diode at power supply circuit 747 opamp gunn diode radar gunn diode radar module gunn diode x band amplifier
Text: Issued March 1997 232-2324 Data Pack E/F Doppler module Data Sheet RS stock number 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave radiation.
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R/3598
X-band doppler radar module
RS-8960
308-017 rs
metal detector using 555 timer
diagram of gunn diode
Gunn Diode at power supply circuit
747 opamp
gunn diode radar
gunn diode radar module
gunn diode x band amplifier
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gunn diode x band amplifier
Abstract: RS-8960 gunn diode x band radar X-band doppler radar module 308-017 rs gunn diode radar module RS8960 Gunn Diode at power supply circuit microwave intruder alarm diagram of gunn diode
Text: E/F3598 Issued July 1985 Doppler module Stocknumber 308-017 The RS 8960 is an X-band Doppler radar module intended for indoor applications and designed specifically for detecting movement of a remote target by detecting Doppler-shift in reflected microwave
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E/F3598
R/3598
gunn diode x band amplifier
RS-8960
gunn diode x band radar
X-band doppler radar module
308-017 rs
gunn diode radar module
RS8960
Gunn Diode at power supply circuit
microwave intruder alarm
diagram of gunn diode
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Untitled
Abstract: No abstract text available
Text: i., L/na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC184 BC184B BC184C TO-92 Plastic Package Amplifier Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25°C unless specified otherwise)
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BC184
BC184B
BC184C
200Hz
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN DARLINGTON POWER TRANSISTOR BDX69 BDX69A BDX69B BDX69C MECHANICAL DATA Dimensions in mm 9.0 max. 26.6 max. 2.5 NPN Darlington transistors for audio
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BDX69
BDX69A
BDX69B
BDX69C
BDX68,
BDX68A,
BDX68B,
BDX68C.
300ns,
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Untitled
Abstract: No abstract text available
Text: ^s.mi-donducto'i ^PioducU, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. PN4250A TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced
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PN4250A
PN200
-55to-c150
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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Untitled
Abstract: No abstract text available
Text: TELEPHONE 973 376-2922 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 (212)227-6006 FAX: (973) 376-8960 U.SA NPN HIGH POWER SILICON TRANSISTOR Devices 2N3902 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current
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2N3902
2N5157
O-204AA)
MIL-PRF-19500/371)
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bpsk with convolutional and lms codes simulink
Abstract: DECT/GMSK simulink
Text: On 1 March 2011, the 89600 VSA software was discontinued. Agilent will continue to support this product until 31 October 2013. The recommended replacement is the Agilent 89600B VSA software. Agilent 89600 Vector Signal Analysis Software Data Sheet • Reach deeper into signals
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89600B
5989-1786EN
bpsk with convolutional and lms codes simulink
DECT/GMSK simulink
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STBC OFDM Matlab code
Abstract: GUIDE INSTALLATION rbs 2111 PAM matlab source code GMSK simulink MIMO OFDM Matlab code LTE FSK ask psk by simulink matlab RFID matlaB design ofdma in LTE simulink matlab simulink 16QAM wcdma simulink
Text: Agilent 89600 Vector Signal Analysis Software Data Sheet • Reach deeper into signals • Gather more data on signal problems • Gain greater insight Table of Contents Introduction .2
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5989-1786EN
STBC OFDM Matlab code
GUIDE INSTALLATION rbs 2111
PAM matlab source code
GMSK simulink
MIMO OFDM Matlab code LTE
FSK ask psk by simulink matlab
RFID matlaB design
ofdma in LTE simulink matlab
simulink 16QAM
wcdma simulink
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1N5719
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 1N5719 PACKAGE STYLE 01 .075(1.9051 .065(1.651) DESCRIPTION: 1.0 MIN (254) 2 PLACES The1N5719 is a Silicon PIN Diode Designed for General Purpose
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1N5719
The1N5719
100mA
1N5719
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Untitled
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Spice Model 1N6619 -M- Electrical Characteristics and Maximum Ratings Working Part Number Reverse Voltage Average Rectified Current Reverse Current
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1N6619
10CTC
50VDC
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N5802 1N5804 1N5806 AXIAL LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE • • • • • Very low reverse recovery time Hermetical sealed in Metoxilite fused metal oxide
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1N5802
1N5804
1N5806
surg35
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Untitled
Abstract: No abstract text available
Text: <^s.mi- 2onductoi ^Pi , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 21*6376 (SILICON) NPN SILICON HIGH-FREQUENCY TRANSISTOR TO-39 MAXIMUM RATINGS (F A - 25°C unless otherwise noted)
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Characteri01
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Untitled
Abstract: No abstract text available
Text: Jsii.su <~>£.m.i-L.onaucitoi L/-* 10 duct ±, One. £s t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. U311 N-Channel Silicon Junction Field-Effect Transistor • Mixer • Oscillator • VHF/UHF Amplifier
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17QOO
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2N4428
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 1 2N4428 *a A 4>b «bi 4>0 »Dt h 1 k 1 I, 1: P Q MAXIMUM RATINGS 425mA Ic VCE 30V
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2N4428
425mA
2N4428
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Untitled
Abstract: No abstract text available
Text: Dna. . *_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MWA310 MWA320 MWA330 If—}-8 c L SEATING / PLANE DC-1000 MHz WIDEBAND GENERAL-PURPOSE HYBRID AMPLIFIERS K & -^j S MAXIMUM R A T I N G S
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MWA310
MWA320
MWA330
DC-1000
MWA3IO/320
MWA320
MWA330
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6180 P-N-P Silicon Power Transistor TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MCIMCUI* •It* 1LUC IPMtamrtTIC FuCMttf. Ul MAXIMUM RATINGS. Absolvte-Mtximum Values: *VCBO * V CEX
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2N6180
TC-100Â
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transistor 2N4248
Abstract: 2N4250 2N4248 2n4249
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Col lector-Emitter Voltage Collector-Emftter Voltage
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2N4248
2N4249
2N4250
2N4250A
O-106
20MHz
100KQ
transistor 2N4248
2N4250
2N4248
2n4249
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Untitled
Abstract: No abstract text available
Text: , One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N2609 GENERAL DESCRIPTION - The 2N2609 is a silicon Planar* P-channel field-effect effect transistor rvice. designed primarily for low power audio-frequency applications in industrial service.
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2N2609
2N2609
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5086 PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collsctor-Emltter Voltage: Vao =50V • Collector Dissipation: Pe (max)=625mW
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2N5086
625mW
lc-100
300f/s,
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Untitled
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N2193 is NPN silicon planar transistor designed for medium power switching and amplifier applications. 2N2193 TO-39 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS
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2N2193
2N2193
100nA
150mA
150mA
20MHz
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3117 NPN SILICON TRANSISTOR TO-18CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage UNITS SYMBOL ^CBO ^ Collector-Emitter Voltage VCEO
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2N3117
O-18CASE
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transistor 2N4248
Abstract: 2N4248 2n4249
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4248 2N4249 2N4250 2N4250A U.S.A. SILICON PNP TRANSISTOR TO-106 MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage
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2N4248
2N4249
2N4250
2N4250A
O-106
VCB-40V
2N4250A
100yA
transistor 2N4248
2N4248
2n4249
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