IRFP460Z
Abstract: IRF3205 application IRF3205 equivalent power MOSFET IRFP460z irfp4004 IRF3808 equivalent irfz44v equivalent IRF1405 equivalent IRLL014N IRF3205
Text: Switch and I/O Reliability Report March, 2003 International Rectifier Table Of Contents 1.0 Introduction 2.0 Environmental Stress And Failure Modes 3.0 The Matrix Qualification Philosophy 4.0 Summary Of Long Term Reliability Test 4.1 Transistors 4.1.1 HTRB
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O-220
IRFP460Z
IRF3205 application
IRF3205 equivalent
power MOSFET IRFP460z
irfp4004
IRF3808 equivalent
irfz44v equivalent
IRF1405 equivalent
IRLL014N
IRF3205
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IRF3205 equivalent
Abstract: IRF 9732 IRFz44n equivalent IRF3710 equivalent IRF4905 equivalent IRC540 equivalent irf 9450 IRF 9734 IRF5305 equivalent irf 9740
Text: 4.1.1 HIGH TEMPERATURE REVERSE BIAS HTRB HEXFET GENERATION 3, TO-220/D2PAK PACKAGE Junction Temperature: Tj = +150°C or 175°C, as indicated Applied Bias: Vg = Vs = 0V; Vd = 100% of maximum rated Bvdss up to 500V then 80% of maximum rated Bvdss Equivalent Dev. Test
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O-220/D2PAK
IRF9630
IRF9510L
IRF9520
IRF9510
IRF9Z14
IRF9Z34
IRCZ34
IRCZ44
IRC540
IRF3205 equivalent
IRF 9732
IRFz44n equivalent
IRF3710 equivalent
IRF4905 equivalent
IRC540 equivalent
irf 9450
IRF 9734
IRF5305 equivalent
irf 9740
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IRF5905
Abstract: MOSFET IRF 9732 transistor equivalent irf510 IRF3710 equivalent IRFz44n equivalent IRF 9732 irf2807 equivalent IRF3205 application IRD110 HTGB
Text: TABLE OF CONTENTS EXECUTIVE SUMMARY i 1.0 INTRODUCTION 1-1 2.0 USING HEXFET RELIABILITY INFORMATION 2-1 3.0 THE MATRIX QUALIFICATION PHILOSOPHY 3.1 CRITICAL HEXFET ATTRIBUTES FOR CONSIDERATION IN MATRIX QUALIFICATION 3.2 CROSS REFERENCE FOR ALL PART TYPES
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O-220/D2PAK
IRF5905
MOSFET IRF 9732
transistor equivalent irf510
IRF3710 equivalent
IRFz44n equivalent
IRF 9732
irf2807 equivalent
IRF3205 application
IRD110
HTGB
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IRFZ44G
Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics
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IRFIZ34N
IRFIZ44N
IRFIZ48N
IRFI1010N
IRFI520N
IRFI530N
IRFI1310N
IRLI3705N
IRLIZ24N
IRLIZ44N
IRFZ44G
IRF840G
IRFZ34G
IRFBC30G
IRF9540G
IRF640G
IRFBC40G
IRFP140 equivalent
transistor 9721
transistor IRFP140N
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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IRF734
Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Text: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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FA38SA50LC
OT-227
FA57SA50LC
FB180SA10
IRC530
O-220
IRC540
IRF734
irf9640 REPLACEMENT GUIDE
IRF3205 smd
IRGTI165F06
irg4pc50fd
*g4pc50w
IRGKI115U06
IRGTI200F06
*gBC20f
IRLIZ34
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IRFBE30 equivalent
Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Text: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566
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May-97
Sep-95
Sep-94
IRFBE30 equivalent
irf9640 REPLACEMENT GUIDE
IRGKI200F06
IRGP440U replacement
IRF3205 smd
IRGBC20FD2
IRFK3D450
IRFBg30 equivalent
IRGNIN150M06
irc540
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Untitled
Abstract: No abstract text available
Text: PD - 94952A IRFZ46NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description
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4952A
IRFZ46NPbF
O-220
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IRF1010
Abstract: No abstract text available
Text: PD - 94952A IRFZ46NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description
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4952A
IRFZ46NPbF
O-220
IRF1010
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Text: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NSPbF
IRFZ46NLPbF
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
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MOSFET IRFZ46N
Abstract: IRFZ46N of irfz46n IRF1010 irfz
Text: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International
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PD-91277A
IRFZ46N
O-220
O-220AB.
O-220AB
IRF1010
MOSFET IRFZ46N
IRFZ46N
of irfz46n
IRF1010
irfz
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Untitled
Abstract: No abstract text available
Text: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A
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IRFZ46NPbF
O-220
al220AB
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IRFZ46N
Abstract: for IRFZ46N MOSFET IRFZ46N transistor IRFZ46N IRF1010
Text: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International
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PD-91277A
IRFZ46N
O-220
O-220AB
IRF1010
IRFZ46N
for IRFZ46N
MOSFET IRFZ46N
transistor IRFZ46N
IRF1010
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ak 957 1542 d
Abstract: AN-994 IRF530S IRFZ46NS SMD-220 DIODE smd marking Ak
Text: Previous Datasheet Index Next Data Sheet PD - _ IRFZ46NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω ID = 46A
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IRFZ46NS
SMD-220
ak 957 1542 d
AN-994
IRF530S
IRFZ46NS
DIODE smd marking Ak
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MOSFET IRFZ46N
Abstract: IRFZ46N equivalent NT 407 F datasheet for IRFZ46N transistor IRFZ46N IRFZ46N of irfz46n
Text: PD-91277 IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International
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PD-91277
IRFZ46N
O-220
O-220AB
MOSFET IRFZ46N
IRFZ46N equivalent
NT 407 F
datasheet for IRFZ46N
transistor IRFZ46N
IRFZ46N
of irfz46n
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IRFZ46NL
Abstract: IGBT GS AN-994 IRFZ46N IRFZ46NS Voltage Regulator 5V 10V for IRFZ46N
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
IRFZ46NL
IGBT GS
AN-994
IRFZ46N
IRFZ46NS
Voltage Regulator 5V 10V
for IRFZ46N
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS to262 pcb footprint
Text: PD - 91305C Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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91305C
IRFZ46NS)
IRFZ46NL)
IRFZ46NS
IRFZ46NL
EIA-418.
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
to262 pcb footprint
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Untitled
Abstract: No abstract text available
Text: PD - 91305C IRFZ46NS IRFZ46NL Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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91305C
IRFZ46NS
IRFZ46NL
IRFZ46NS)
IRFZ46NL)
EIA-418.
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Text: PD - 9.1305B IRFZ46NS IRFZ46NL Advanced Process Technology l Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω
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1305B
IRFZ46NS
IRFZ46NL
IRFZ46NS)
IRFZ46NL)
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
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Untitled
Abstract: No abstract text available
Text: International PD91272 ^Rectifier_ IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements V DSS = 2 5 0 V ^D S o n = 1 - 1 ^
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OCR Scan
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IRFD224
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Z46N
Abstract: No abstract text available
Text: PD - 9.1305A International IQR Rectifier IRFZ46NS/L HEXFET Power M O SFET • Advanced Process Technology • Surface Mount IRFZ46NS • Low-profile through-hole (IRFZ46NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 5 5 V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NS/L
Z46N
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IRFZ46N
Abstract: MOSFET IRFZ46N of irfz46n for IRFZ46N
Text: PD - 9.1277C International IQ R Rectifier IRFZ46N HEXFET Power M OSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFET® from International Rectifier utilize advanced
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1277C
IRFZ46N
O-220
IRFZ46N
MOSFET IRFZ46N
of irfz46n
for IRFZ46N
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Untitled
Abstract: No abstract text available
Text: International [tor]Rectifier PD - 9.1277B IRFZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 5 5 V ^ D S o n = 0.020Q lD = 46A Description
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1277B
IRFZ46N
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91305A
Abstract: No abstract text available
Text: PD - 9.1305A International IQ R Rectifier IRFZ46NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ46NS • Low-profilethrough-hole(IRFZ46NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V
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IRFZ46NS)
IRFZ46NL)
91305A
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