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    AD8224ACPZ-WP Analog Devices Dual Channel FET Instrumentati Visit Analog Devices Buy
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    Infineon Technologies AG PROFETMOTHERBRDTOBO1

    Power Management IC Development Tools PROFET+ MOTHERBRD
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    Mouser Electronics PROFETMOTHERBRDTOBO1 1
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    Infineon Technologies AG INDPROFETEVALBOARDTOBO1

    Power Management IC Development Tools
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    Infineon Technologies AG PROFETONE4ALLMBV1TOBO1

    Power Management IC Development Tools
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    Mouser Electronics PROFETONE4ALLMBV1TOBO1
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    Microchip Technology Inc VN0106N3-G

    Small Signal Field-Effect Transistor - 0.35A I(D) - 60V - 1-Element - N-Channel - Silicon - Metal-oxide Semiconductor FET - TO-92
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    Onlinecomponents.com VN0106N3-G 2,100
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    Microchip Technology Inc TP2435N8-G

    P-Channel Enhancement-Mode Vertical DMOS FET - -350V - 15 ohm - 3-lead SOT-89 - Tape&Reel - RoHS compliant
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    Onlinecomponents.com TP2435N8-G 2,000
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    OF FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC33091AD

    Abstract: KK33091A KK33091AD KK33091AN MS-012AA MS-001-BA
    Text: TECHNICAL DATA Powerful High-grade FET driver KK33091A Description of basic functions. The capability of handling high voltages on power line attributed to transient commutation of loads in conditions of automobile exploitation. Load of microcircuit is a device on the base of MOS transistors


    Original     		PDF KK33091A KK33091AN KK33091AD 012AA) MC33091AD KK33091A MS-012AA MS-001-BA

    IL33091

    Abstract: IL33091AD mos transistor IL33091A IL33091AN MC33091AD MS-012AA
    Text: TECHNICAL DATA Powerful High-grade FET driver IL33091A Description of basic functions. The capability of handling high voltages on power line attributed to transient commutation of loads in conditions of automobile exploitation. Load of microcircuit is a device on the base of MOS transistors


    Original     		PDF IL33091A IL33091AN IL33091AD 012AA) IL33091 mos transistor IL33091A MC33091AD MS-012AA

    LM11CN

    Abstract: No abstract text available
    Text: LM11C, CL Precision Operational Amplifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude


    Original     		PDF LM11C, LM11C LM308A. LM11CN

    SD5000

    Abstract: siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210 SD210DE SD5400 2n7000 equivalent
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 siliconix sd210 SD5000N SST211 VSB uhf modulator analog AN301 SD210DE 2n7000 equivalent

    A CLIPPER CIRCUIT APPLICATIONS

    Abstract: sd5000 SD210 future scope of jfet sd211 SD5000I sst211 sot-143 VSB uhf modulator analog jfet transistor n-channel to 92 FAST DMOS FET Switches
    Text: High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application


    Original     		PDF SD210/5000 SD210 SD5000 SST211, SD5400 dD214DE SD/SST211 O-72/SOT-143 SD/SST213 A CLIPPER CIRCUIT APPLICATIONS future scope of jfet sd211 SD5000I sst211 sot-143 VSB uhf modulator analog jfet transistor n-channel to 92 FAST DMOS FET Switches

    AN301

    Abstract: SD210 sd5000 SD50001 sst211 sot-143 VSB uhf modulator analog siliconix sd210 equivalent of sd211 2N7000 MOSFET protection VSB uhf modulator
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Jack Armijos Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics,


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 22-Jun-94 10-MHz 2N4959 AN301 SD50001 sst211 sot-143 VSB uhf modulator analog siliconix sd210 equivalent of sd211 2N7000 MOSFET protection VSB uhf modulator

    P-Channel Depletion Mode FET

    Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
    Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic


    Original     		PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion

    omron reed relay

    Abstract: omron relay electromechanical bake omron relay electromechanical baking ultrasonic motion detector 750H ST-100S
    Text: MOS FET Relays Technical Information Introduction New models with a wider range of characteristics provide an array of solutions, meeting the needs of today’s high performance applications. Our expanded range of MOS FET relays, Type G3VM, sets the benchmark in Solid State Relays SSRs . Products are manufactured


    Original     		PDF X302-E-1 omron reed relay omron relay electromechanical bake omron relay electromechanical baking ultrasonic motion detector 750H ST-100S

    Omron

    Abstract: MOS FET Relays 750H ST-100S omron relay electromechanical bake 10 PIN TRANSISTOR AND MOS FET ARRAY ultrasonic cleaning driving circuit
    Text: MOS FET Relays Technical Information Introduction New models with a wider range of characteristics provide an array of solutions, meeting the needs of today’s high performance applications. Our expanded range of MOS FET relays, Type G3VM, sets the benchmark in Solid State Relays SSRs . Products are manufactured


    Original     		PDF X302-E-1 Omron MOS FET Relays 750H ST-100S omron relay electromechanical bake 10 PIN TRANSISTOR AND MOS FET ARRAY ultrasonic cleaning driving circuit

    DL135

    Abstract: No abstract text available
    Text: E−FET, EZFET, MicroIntegration, MiniMOS, PInPAK, SENSEFET, and SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC ChipFET is a trademark of Vishay Siliconix. FETKY is a registered trademark of International Rectifier Corporation.


    Original     		PDF DL135/D DL135

    siliconix sd210

    Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
    Text: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.


    Original     		PDF AN301 SD210/5000 SD210 SD5000 SST211, SD5400 10-Mar-97 2N4959 siliconix sd210 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400

    pin diagram of bts 149

    Abstract: BSP 76 "pin compatible" ANPS027E 13450M bsp mosfet
    Text: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,


    Original     		PDF ANPS027E pin diagram of bts 149 BSP 76 "pin compatible" 13450M bsp mosfet

    fully protected p channel mosfet

    Abstract: BSP 76 "pin compatible" bsp mosfet POWER SUPPLY BTS SIEMENS BSP 78 HITFET Car Battery 12V short circuit
    Text: HL Application Note BSP 75, BSP 75A Monolithic Smart Power Low-Side Switch extends the HITFET family in the low power area Claus Preuschoff Introduction The introduction of the TEMPFET® TEMperature Protected FET was the start of the era of Siemens Smart Power low side switches. The integration of further protective functions,


    Original     		PDF Anps027e fully protected p channel mosfet BSP 76 "pin compatible" bsp mosfet POWER SUPPLY BTS SIEMENS BSP 78 HITFET Car Battery 12V short circuit

    BF245 A spice

    Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
    Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and


    Original     		PDF 100kHz BF245 A spice BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model

    lm11c

    Abstract: No abstract text available
    Text: g MOTOROLA Precision Operational Amplifiers The LM11C is a precision, low drift operational am plifier p' aviding the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude


    OCR Scan     		PDF LM11C LM308A.

    Untitled

    Abstract: No abstract text available
    Text: TC40107BP TC40107BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		PDF TC40107BP TC40107BP 500pF, 120il

    LM11C

    Abstract: IC i voltage follower LM11CN LM308A
    Text: g MOTOROLA Precision O perational A m plifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude


    OCR Scan     		PDF LM11C LM308A. b3Lj7253 IC i voltage follower LM11CN LM308A

    tc40107

    Abstract: No abstract text available
    Text: TC40107BP TC40107BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		PDF TC40107BP TC40107BP 500pF, 120ii 120il tc40107

    LM11 op amp

    Abstract: LM11CLN c4082 LM11C "LM11"
    Text: LM11C LM11CL MOTOROLA SEMICONDUCTOR TECHNICAL DATA Precision Operational Amplifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude over


    OCR Scan     		PDF LM11C LM11CL LM308A. LM11 op amp LM11CLN c4082 "LM11"

    Untitled

    Abstract: No abstract text available
    Text: TC40107BP C*MOS DIGITAL INTEGRATED CIRCUIT SILICO N M ONOLITHIC TC40107BP DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		PDF TC40107BP TC40107BP 500pF, 20kil) 120il 120S2 120ii

    rl120n

    Abstract: TC40107B TC40107BP
    Text: TC40107BP C 2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC40107BP DUAL 2-INPUT NAND B U FFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,


    OCR Scan     		PDF TC40107BP TC40107BP 500pF, 20kii) 120il rl120n TC40107B

    2SJ32C

    Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
    Text: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SK19 2SK1923 T0-220 2SK1924 2SK2043LS 2SK2044LS O-220FI 2SK2045LS 2SK19; 2SK1922 2SJ32C 2SK14 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161

    2sk1885

    Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
    Text: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2sk1885 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26

    2SK2164

    Abstract: 2SK1885 2SJ270 2SJ260 2sj261
    Text: SAßiYO Power MOS FETs 3 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and


    OCR Scan     		PDF 2SJ272 2SJ273 T0-220ML 2SJ274 2SK1904 2SK1905 60m/80m 2SK1906 2SJ275 2SJ276 2SK2164 2SK1885 2SJ270 2SJ260 2sj261