ir p 805
Abstract: OD-148-C OD-148W
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-148W FEATURES 1.00 MIN. ANODE CASE • Open center of emission .209 .220 • High reliability liquid-phase epitaxially grown GaAlAs • Hermetically sealed TO-46 package .183 .152 .187 .156 • OD-148-C chip used
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OD-148W
OD-148-C
100Hz
ir p 805
OD-148W
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ODD-45W
Abstract: OD-148-C OD-148W OD-24F OD-880 OD-880E OD-880F OD-880F1 OD-880L OD-880W
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output
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OD-880W
880nm
ODD-45W
100Hz
OD-148-C
OD-148W
OD-24F
OD-880
OD-880E
OD-880F
OD-880F1
OD-880L
OD-880W
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OD-148-C
Abstract: OD-148W
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-148W FEATURES 1.00 MIN. ANODE CASE • Open center of emission .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • Hermetically sealed TO-46 package • OD-148-C chip used .183 .152
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PDF
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OD-148W
OD-148-C
100mA
100Hz
OD-148W
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OD-148-C
Abstract: OD-148W
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS .006 HIGH MAX .015 OD-148W FEATURES 1.00 MIN. ANODE CASE • Open center of emission • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • Hermetically sealed TO-46 package • OD-148-C chip used .183 .152
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OD-148W
OD-148-C
100mA
100Hz
OD-148W
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OD-148-C
Abstract: OD-148W Opto Diode
Text: HIGH-POWER GaAlAs IR EMITTERS OD-148W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • Open center of emission .209 .212 • High reliability liquid-phase epitaxially grown GaAlAs • Hermetically sealed TO-46 package • OD-148-C chip used .183 .152
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OD-148W
OD-148-C
100mA
100Hz
OD-148W
Opto Diode
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transistor SR 13001
Abstract: IR photodiode 95w OD-520L UV led diode 200 nm peak 1W ODD-470W OD-830-99-070 ODD-525W ODD-660W OD50L OD-50L
Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety
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660nm
ODD-660W
transistor SR 13001
IR photodiode 95w
OD-520L
UV led diode 200 nm peak 1W
ODD-470W
OD-830-99-070
ODD-525W
ODD-660W
OD50L
OD-50L
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAIAs IR EMITTERS OD-148W FEATURES • Open center of emission • High reliability liquid-phase epitaxially grown GaAIAs • Hermetically sealed T 0 4 6 package • OD-148-C chip used All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window
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OCR Scan
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PDF
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OD-148W
OD-148-C
100mA
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OD-148-C
Abstract: OD-148W
Text: OPTO DIODE CORP SSE D • bflomñ □DDDD7T < 12 3 m0P]> HIGH-POWER GaAIAs IR EMITTERS OD-148W FEATURES • Open center of emission • High reliability liquid-phase epitaxially grown GaAIAs • Hermetically sealed TO-46 package • 100% power output test
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OCR Scan
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PDF
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OD-148W
OD-148W
OD-148-C
100Hz
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Untitled
Abstract: No abstract text available
Text: OPTO DI ODE CORP SSE J> • b f l O m f l 0 0 0 0 0 7 ^ «ÌE3 H O P D HIGH-POWER GaAlAs IR EMITTERS OD-148W FEATURES • Open center of emission • High reliability liquid-phase epitaxially grown GaAIAs • Hermetically sealed TO-46 package • 100% power output test
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OCR Scan
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PDF
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OD-148W
OD-148W
OD-148-C
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Untitled
Abstract: No abstract text available
Text: OD-148W HIGH-POWER GaAIAs IR EMITTERS FEATURES • Open center of emission • High reliability liquid-phase epitaxially grown GaAIAs • Hermetically sealed TO-46 package • 100% power output test All surfaces are gold plated. All dimensions are nominal
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OCR Scan
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PDF
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OD-148W
OD-148W
OD-148-C
100mA
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