Untitled
Abstract: No abstract text available
Text: BC856 PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications MECHANICAL DATA • Case: SOT-23 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI
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BC856
OT-23
2002/95/EC
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BAV16WS
Abstract: J-STD-020D
Text: BAV16WS SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOD-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOD-323 MECHANICAL DATA
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BAV16WS
OD-323
OD-323
J-STD-020D
2002/95/EC
BAV16WS
J-STD-020D
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1N4148W T4
Abstract: 1N4148W J-STD-020D MARKING CODE diode sod123 t4 1N4148WT4
Text: 1N4148W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOD-123 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOD-123 MECHANICAL DATA
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1N4148W
OD-123
OD-123
J-STD-020D
2002/95/EC
1N4148W T4
1N4148W
J-STD-020D
MARKING CODE diode sod123 t4
1N4148WT4
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BAW56W
Abstract: J-STD-020D
Text: BAW56W SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOT-323 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-323 Dim. Min. A A1
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BAW56W
OT-323
OT-323
J-STD-020D
2002/95/EC
BAW56W
J-STD-020D
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J-STD-020D
Abstract: SD101AWS SD101BWS SD101CWS
Text: SD101AWS, BWS, CWS SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 to 60 Volts FORWARD CURRENT – 0.015 Ampere FEATURES SOD-323 • Extremely low VF drop • Guard Ring Construction for Transient protection • Negligible Reverse Recovery Time
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SD101AWS,
OD-323
OD-323
J-STD-020D
2002/95/EC
J-STD-020D
SD101AWS
SD101BWS
SD101CWS
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BZX84C5V6T
Abstract: BZX84C2V4T BZX84C2V7T BZX84C3V0T BZX84C3V3T BZX84C3V6T BZX84C3V9T BZX84C4V3T BZX84C4V7T J-STD-020D
Text: BZX84CxT Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.15 Watts FEATURES SOT-523 • Planar die construction • 150mW power dissipation rating • Ultra-small surface mount package SOT-523 Dim. A A1 b c D E E1
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BZX84CxT
OT-523
150mW
OT-523
J-STD-020D
2002/95/EC
BZX84C5V6T
BZX84C2V4T
BZX84C2V7T
BZX84C3V0T
BZX84C3V3T
BZX84C3V6T
BZX84C3V9T
BZX84C4V3T
BZX84C4V7T
J-STD-020D
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1N4007 liteon
Abstract: 1N4004 LITEON 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
Text: LITE-ON SEMICONDUCTOR 1N4001 thru 1N4007 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.0 Ampere PLASTIC SILICON RECTIFIERS DO-41 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0
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1N4001
1N4007
DO-41
DO-41
1N4007 liteon
1N4004 LITEON
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
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3001G
Abstract: 3007G PR3001G PR3007G
Text: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop
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PR3001G
PR3007G
DO-201AD
DO-201AD
3001G
3007G
PR3007G
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J-STD-020D
Abstract: MMBD4148TW ka2 DIODE
Text: MMBD4148TW SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 75 Volts FORWARD CURRENT – 0.15 Ampere SOT-363 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-363 Dim. A B
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MMBD4148TW
OT-363
OT-363
J-STD-020D
2002/95/EC
J-STD-020D
MMBD4148TW
ka2 DIODE
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1N5819
Abstract: 1N5817 1N5818
Text: LITE-ON SEMICONDUCTOR 1N5817 thru 1N5819 REVERSE VOLTAGE - 20 to 40 Volts FORWARD CURRENT - 1.0 Ampere SCHOTTKY BARRIER RECTIFIERS DO-41 FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability
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1N5817
1N5819
DO-41
DO-41
1N5819
1N5818
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J-STD-020D
Abstract: MMBD4448HSDW
Text: MMBD4448HSDW SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.25 Ampere SOT-363 FEATURES • Fast switching speed • Ideally suited for automatic insertion • For general purpose switching applications SOT-363 Dim. A
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MMBD4448HSDW
OT-363
OT-363
J-STD-020D
2002/95/EC
J-STD-020D
MMBD4448HSDW
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SBL1030
Abstract: SBL1035 SBL1040 SBL1045 SBL1050 SBL1060
Text: LITE-ON SEMICONDUCTOR SBL1030 thru SBL1060 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 10 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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SBL1030
SBL1060
O-220AC
O-220AC
SBL1035
SBL1040
SBL1045
SBL1050
SBL1060
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t16m5t
Abstract: T16M5T-B T16M
Text: LITE-ON SEMICONDUCTOR T16M5T-B SERIES TRIACS 16 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES B Sensitive Gate allows Triggering by Microcontrollers and other Maximum Values of IGT, VGT and IH Specified for
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T16M5T-B
O-220AB
t16m5t
T16M
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L09ESD3V3CB2
Abstract: 15KV J-STD-002
Text: LITE-ON SEMICONDUCTOR L09ESD3V3CB2 STAND-OFF VOLTAGE – 3.3 Volts POWER DISSIPATION – 90 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOD-323 L09ESD3V3CB2 is designed to replace multilayer varistors MLVs in portable applications where low operating voltage is vital. They offer
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L09ESD3V3CB2
OD-323
L09ESD3V3CB2
15KV
J-STD-002
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GR-1089-CORE
Abstract: TB0640H TB0720H TB0900H TB1100H TB1300H TB4000H
Text: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400
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TB0640H
TB4000H
10/1000us
8/20us
GR-1089-CORE
TB0720H
TB0900H
TB1100H
TB1300H
TB4000H
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LS4148W liteon
Abstract: LS4148W
Text: LITE-ON SEMICONDUCTOR LS4148W REVERSE VOLTAGE - 100 V POWER DISSIPATION - 400 mW SURFACE MOUNT FAST SWITCHING DIODE 1206 FEATURES For surface mounted application Silicon epitaxial planar diode High speed switching Ultra small surface mount package Low leakage current
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LS4148W
LS4148W liteon
LS4148W
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220 volts zener diode specifications
Abstract: zener diode 0805 zener diode 5v1 LZ52C-WS LZ52C6V8WS "Zener Diode 0805" ZENER 5V1 LZ52C12WS 6V2 Zener Diode LZ52C11WS
Text: LITE-ON SEMICONDUCTOR LZ52C-WS Series ZENER VOLTAGE - 5.1 to 36 Volts POWER DISSIPATION - 500 mWatts SURFACE MOUNT ZENER DIODE 0805 FEATURES For surface mounted application Silicon epitaxial planar diode Ultra small surface mount package Low leakage current
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LZ52C-WS
220 volts zener diode specifications
zener diode 0805
zener diode 5v1
LZ52C6V8WS
"Zener Diode 0805"
ZENER 5V1
LZ52C12WS
6V2 Zener Diode
LZ52C11WS
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RB500V-40
Abstract: J-STD-020D characteristic
Text: RB500V-40 SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOD-323 • Extremely low VF drop • Very Small Conduction Losses SOD-323 MECHANICAL DATA • Case: SOD-323 Plastic • Case Material: “Green” molding compound, UL
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RB500V-40
OD-323
OD-323
J-STD-020D
2002/95/EC
RB500V-40
J-STD-020D
characteristic
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L12ESDL5V0JA-4
Abstract: 15KV MSOP-10L
Text: LITE-ON SEMICONDUCTOR L12ESDL5V0JA-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 120 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION MSOP-10L The L12ESDL5V0JA-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically
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L12ESDL5V0JA-4
MSOP-10L
L12ESDL5V0JA-4
15KV
MSOP-10L
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BAS40T
Abstract: BAS40 BAS40-04T J-STD-020D
Text: BAS40T, BAS40-04T thru -06T SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 0.2 Ampere FEATURES SOT-523 • Extremely Fast Switching Speed • Low Forward Voltage • Very Small Conduction Losses SOT-523 Dim. A A1 b c
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BAS40T,
BAS40-04T
OT-523
OT-523
J-STD-020D
2002/95/EC
BAS40T
BAS40
J-STD-020D
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SD1A210GW
Abstract: No abstract text available
Text: SD1A210GW SIDAC SIDAC High Voltage Silicon Bidirectional Thyristors 1 AMPERE RMS 220 VOLTS FEATURES •VBO range is from 201 to 219 Vdc •VDRM & VRRM with stand +/- 180V. •IH+/- is under 65mA. •Compact package for spacing saving. Application • Gas Igniters
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SD1A210GW
SD1A210GW
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MBR760
Abstract: MBR730 MBR735 MBR740 MBR745 MBR750
Text: LITE-ON SEMICONDUCTOR MBR730 thru MBR760 REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 7.5 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AC FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency
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MBR730
MBR760
O-220AC
O-220AC
MBR760
MBR735
MBR740
MBR745
MBR750
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LT2A07G
Abstract: 2A01G 2A02G 2A03G 2A04G 2A05G 2A06G 2A07G LT2A01G 600LT
Text: LITE-ON SEMICONDUCTOR LT2A01G thru LT2A07G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes GLASS PASSIVATED RECTIFIERS DO-15 FEATURES Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability Plastic material has UL flammability classification 94V-0
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LT2A01G
LT2A07G
DO-15
DO-15
LT2A07G
2A01G
2A02G
2A03G
2A04G
2A05G
2A06G
2A07G
600LT
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D2E diode
Abstract: J-STD-020D RB491D
Text: RB491D SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 25 Volts FORWARD CURRENT – 1.0 Ampere FEATURES SOT-23 • Low Turn-on Voltage • Fast Switching • PN Junction Guard Ring for Transient and ESD Protection SOT-23 Dim. A A1 b c D E E1 e e1
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RB491D
OT-23
OT-23
J-STD-020D
2002/95/EC
D2E diode
J-STD-020D
RB491D
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