transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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2SC1766GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)
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2SC1766GP
SC-62/SOT-89)
SC-62/SOT-89
Q1766
Y1766
100mS*
250mm
2SC1766GP
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2SA1213GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: t stg= 1.0uSec (typ.)
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2SA1213GP
SC-62/SOT-89
SC-62/SOT-89)
100mS*
250mm
2SA1213GP
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2SA1213PT
Abstract: oc pnp sc62
Text: CHENMKO ENTERPRISE CO.,LTD 2SA1213PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: t stg= 1.0uSec (typ.)
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2SA1213PT
SC-62/SOT-89
SC-62/SOT-89)
100mS*
250mm
2SA1213PT
oc pnp sc62
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FR4 substrate
Abstract: Y1766 2sc1766
Text: CHENMKO ENTERPRISE CO.,LTD 2SC1766PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)
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2SC1766PT
SC-62/SOT-89)
SC-62/SOT-89
Q1766
Y1766
100mS*
250mm
FR4 substrate
Y1766
2sc1766
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CHT2907XGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT2907XGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 60 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small surface mounting type. SC-62/SOT-89
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CHT2907XGP
SC-62/SOT-89
SC-62/SOT-89)
600mA)
50ohmS
200ohmS
CHT2907XGP
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BSS192
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor
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M3D109
BSS192
SCA74
613510/03/pp12
BSS192
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transistor a200
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D109 BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 2002 May 22 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor
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M3D109
BSS192
SCA74
613510/03/pp12
transistor a200
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2SB772GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SB772GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
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2SB772GP
SC-62/SOT-89)
SC-62/SOT-89
2SB772GP
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2SD882GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SD882GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
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2SD882GP
SC-62/SOT-89
SC-62/SOT-89)
2SD882GP
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2SB772PT
Abstract: 2SB772P TRANSISTOR b 772 p E72 transistor common collector PNP 772 pnp oc sc62
Text: CHENMKO ENTERPRISE CO.,LTD 2SB772PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-2A)
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2SB772PT
SC-62/SOT-89)
SC-62/SOT-89
2SB772PT
2SB772P
TRANSISTOR b 772 p
E72 transistor
common collector PNP
772 pnp
oc sc62
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2SD882P
Abstract: P82 transistor transistor MW 882 2SD882PT 10A Switching convertor 882 transistor
Text: CHENMKO ENTERPRISE CO.,LTD 2SD882PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 30 Volts CURRENT 3 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.5V(max.)(IC=2A)
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2SD882PT
SC-62/SOT-89
SC-62/SOT-89)
2SD882P
P82 transistor
transistor MW 882
2SD882PT
10A Switching convertor
882 transistor
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2SD2172
Abstract: 2SD2165 2SD2152 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138
Text: - 282 - W c k & fà l a = 2 b V , * m t l c = 2 h aC M 2SD2133 2SD2134 2SD2135 2SD2136 2SD2137 2SD2137A 2SD2138 2SD2138A 2SD2139 2SD2140 2SD2144S 2SD2145 2SD2145M 2SD2148 oc*noi »n 2SD2150 2SD2151 2SD2152 2SD2154 2SD2156 2SD2156A 2SD2157 2SD2157A 2SD2158
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2SD2133
2SD2134
2SD2135
2SD2136
2SD2137
2SD2137A
2SD2138
2SD2138A
2SD2156
T0-220Fa)
2SD2172
2SD2165
2SD2152
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5214 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. unit mm It designed with high collector current and 2 to 3.5W low frequency power
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2SC5214
2SC5214
2SA1947.
SC-62
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2SA1369
Abstract: oc pnp sc62 oc sc62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1369 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1369 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING collector dissipation, high collector current, high hFE.
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2SA1369
2SA1369
2SC3439.
500mW
SC-62
oc pnp sc62
oc sc62
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Schottky Diode SC-62
Abstract: SE046 diode sc-62
Text: COL L HE R S E M I C O N D U C T O R SE046 o INC 4flE D • 2 2 3 0 7 ^ 2 G00174fi 2flfl » C O L . 9 5 A _ 2 2 V ■ Outline Drawings SCHOTTKY BARRIER DIODE i 6 ma:X. 4.6 MAX. 1 ¡anh) 0.44 MAX. 0.55 MAXJ-J_ .15, . 15 I 0.48 MAX.
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G00174fi
SE046
-----SC-62
GD017MC
223fl7TS
aCI017S0
Schottky Diode SC-62
diode sc-62
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S5100
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1947 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1947 is a resin sealed silicon PNP epitaxial type transistor. It is OUTLINE DRAWING Unit mm designed with high collector current and 2 to 3.5W low frequency power amplify.
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2SA1947
2SA1947
2SC5214.
100MHztyp
SC-62
S5100
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HA11466S
Abstract: hd49783fp HA11505 HA13403 HA11511CNT HA1124 HA11466 HA118121 SC-5278 HA11561
Text: Package Information Package List T V A p p lica tio n s Type No. Package Code HA1124 HA1125 HA11235 HA11247 HA11423 HA11423MP HA11431 HA11431NT HA11436A HA11440A HA11441 HA11441MP HA11442A HA11465A HA11485BNT HA11505 HA11508 HA11510NT HA11511CNT HA11513 HA11525MP
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HA21008
HA21009MS
HD49304ANT
HD49306AF
HD49307
HD49409FS
HD49410FS
HD49412FS
HD49420FS
HD49421FS
HA11466S
hd49783fp
HA11505
HA13403
HA11511CNT
HA1124
HA11466
HA118121
SC-5278
HA11561
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2sc5211
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC5211 FOR GENERAL-PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Mitsubishi 2SC5211 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and high voltage.
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2SC5211
2SC5211
2SA1945.
150MHz
600mA
SC-62
Ta-25X
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2SC5210
Abstract: 25M SC-62
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5210 FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE DESCRIPTION M itsubishi 2 S C 5210 is a silicon NPN trip le diffu se d tra n sisto r d esig n ed for OUTLINE DRAWING
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2SC5210
2SC5210
SC-62
Ta-25
25M SC-62
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Untitled
Abstract: No abstract text available
Text: DTA144VU A / D TA144VKA / D TA144VSA Transistors D TC 144V U A / D TC 144V K A / D TC 144V SA Digital transistor built-in resistors DTA144VUA / DTA144VKA / DTA144VSA I •Features •A bsolu te maximum ratings (T a = 2 5 t:) 1 ) Built-in bias resistors enable the configuration of an inverter
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DTA144VU
TA144VKA
TA144VSA
DTA144VUA
DTA144VKA
DTA144VSA
0Dlb713
O-220FN
O-220FN
O220FP
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Untitled
Abstract: No abstract text available
Text: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1
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2SK2715
SC-63
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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mitsubishi vcb
Abstract: 2SC3443
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC3443 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3443 is a silicon NPN epitaxial type transistor designed for small OUTLINE DRAWING Uni( type motor drive, power supply application.
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2SC3443
2SC3443
2SA1363.
500mW
SC-62
mitsubishi vcb
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2sa1363
Abstract: mitsubishi 2SA1363
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1363 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1363 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING Uni,:mm collector current and high collector dissipation.
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OCR Scan
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2SA1363
2SA1363
2SC3443.
500mW
SC-62
mitsubishi 2SA1363
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