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Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SEN-3076 TECHNICAL DATA PART NUMBER: SEN-3076 PARALLEL REDUNDANT LEVEL TRANSLATOR DESCRIPTION: PARALLEL REDUNDANT LEVEL TRANSLATOR, HYBRID MICROCIRCUIT. o MAXIMUM RATINGS All ratings are at TA = 25 C unless otherwise specified. RATING
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SEN-3076
10ABC,
10ABF
10BCF
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Untitled
Abstract: No abstract text available
Text: u v m _ i b s TECHNOLOGY M ic ro p o w e r D C /D C C o n ve rte r A d ju sta b le a n d Fixed 5V, 12V F€flTUR€S D CSCRIPTIOfl • Operates at Supply Voltages from 2V to 30V ■ Consumes Only 110|oA Supply Current ■ Works in Step-Up or Step-Down Mode
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LT1108
LT1108
V-20V
200mA
500mA
Q01Q3E4
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S320S7
Abstract: S340S7 S360S7
Text: R S M ELECTRON/SENS ITRON T -0 3 -I5 " 1SE D § 7SG3t5G DDD07t0 ? | ^VSENS/TRON_ * SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 F A X 516 242 9798 TECHNICAL SPECIFICATIONS HIGH CU RREN T A X IA L LEAD
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S320S7
S340S7
S360S7
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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MIL-T-27
Abstract: H1000 INDUCTOR inductor H330 52kH tf5r
Text: DESIGNED FOR NATIONAL SEMICONDUCTOR MILITARY/AEROSPACE QUALIFIED SIMPLE SWITCHER Designed for use with M IL-STD-883C qualified National Semicon ductor Device numbers LM 15 75 and LM 15 77. Renco component operation validated by National Semiconductor.
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IL-STD-883C
MIL-T-27,
MIL-45208
RL3459
MIL-T-27
H1000 INDUCTOR
inductor H330
52kH
tf5r
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RL-2580
Abstract: RL-1961 RL-2581 RL1961 RL1952 renco rl 2580 renco rl2448 National Semiconductor Applications RL-2445 RL2447
Text: MAY 1996 TRANSFORMERS & CHOKES FOR NATIONAL SEMICONDUCTOR* APPLICATIONS u ms </>•= oS rm SINCE 1955 Renco Electronics POWER LINE CHOKES FOR NATIONAL SEMICONDUCTOR APPLICATIONS T h is P o w e r Line C h o ke S e rie s uses high s a tu ra tio n flu x d e n s ity m a te ria l m a k in g th e m id e a l fo r use in
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RL-1954
RL-19
250nH
250jiH
RL-2580
RL-1961
RL-2581
RL1961
RL1952
renco rl 2580
renco rl2448
National Semiconductor Applications
RL-2445
RL2447
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KS0066F00
Abstract: No abstract text available
Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.
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KS0066
KS0066
32kinds
KS0066FQ0,
71b414E
60-QFP-UUA
Q0220b7
98-STAB-35mm
120-STAB-35mm
KS0066F00
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Untitled
Abstract: No abstract text available
Text: MIL •M-38 5 IOw M B P T 16 April 1980 MILITARY SPECIFICATION MICROCIRCUITS, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON This specification is approved for use by aLl Depart ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, CMOS,
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MIL-M-38510.
NOT510/116
MIL-M-38
MIL-M-38510
MIL-M-38510
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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Untitled
Abstract: No abstract text available
Text: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network
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RC2324DP/DS
RC2324DP/DS
212Aand
character38
64-Pin
40-Pin
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R96FAX
Abstract: No abstract text available
Text: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field
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Untitled
Abstract: No abstract text available
Text: EPSON PF836-02 SEDI 670 Dot Matrix High Duty LCD Driver • 100 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW T he S E D 1 670 is a 100 output low-power resistance common row driver which is suitable for driving a very high
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PF836-02
SED1670
SED1631*
SED1635*
33b4134
GG0372G
G-219
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taa 723
Abstract: SRS660
Text: SRS660 ^S E N S IT R O N SEMICONDUCTOR TECHNICAL DATA DATASHEET 132 REVISION — 6/93 600 VOLT, 6 AMP GLASS HERMETIC SEALED AXIAL LEAD RECTIFIERS FEATURES • • • • DOUBLE PLUG, METALLURGICALLY BONDED CONSTRUCTION. HIGH VOLTAGE, HIGH CURRENT. HIGH SU R G E CAPABILITY.
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SRS660
SRS660
ra100Â
7S03t
taa 723
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1N4933
Abstract: 1N4934 1N4935 1N4936 1N4937 1N4942
Text: 1N 4933 TH R U 1N 4937 FAST SWITCHING VOLTAGE - 50 to 600 Volts PLASTIC RECTIFIER CURRENT - 1.0 Ampere FEATURES DO-41 • H ig h s u rg e c u r re n t c a p a b ility . • P la s tic p a c k a g e h a s U n d e rw rite rs L a b o ra to ry F ia m m a b ility C la s s ific a tio n 9 4 V - 0 u tiliz in g
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1N4933
1N4937_
DO-41
MIL-S-19500/228
MIL-STD-202,
1N4934
1N4935
1N4936
1N4937
1N4942
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Untitled
Abstract: No abstract text available
Text: S£NS^TfíQ^§gMlOÓNOUCTOR PEAK INVERSE VOLTAGE TYPE ' NUMBER . Vote . 150 SHCNA15HFT 15G SMCPA1SHË» 1 150 SHCOA6QFR 600 SHCNA6ÛFR *600 r J3HCPA6GFR' . ~ m •690 ‘ SHCMA68s 7 ' m SHÊPA6GE7' ’ 1 600 1000 EESSSEKn SHCNAIOOFH’* ' 1000 SH PAt00F»#|
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SHCNA15HFT
SHCMA68s
PAt00F»
1000SHCDAIOQHT
SHCNA100V
SHCPA10QV
R0417
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Untitled
Abstract: No abstract text available
Text: 1994 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS Continued GENERAL PURPOSE DEVICES (Trr £5000 ns) TYRE NUMBER PEAK INVERSE VOLTAGE VOLTS MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED)
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1N3611
1N3612
1N3613
1N3614
1N3957
1N4245
1N4246
1N4247
1N4248
1N4249
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1N5811
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG HERMETIC SURFACE MOUNT RECTIFIERS MELFS GENERAL PURPOSE (Trr TYPE NUMBER PEAK INVERSE VOLTAGE 2000 nsec) MAXIMUM AVERAGE DC OUTPUT CURRENT AMPS VOLTS Ta = 55°c PEAK SINGLE CYCLE SURGE (8.3 mS) MAXIMUM FORWARD
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1N5614US
1N5616US
1N5618US
1N5620US
1N5622US
1N5550US
1N5551US
1N5552US
1N5553US
1N5554US
1N5811
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Untitled
Abstract: No abstract text available
Text: UF1A THRU UF1K SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE - 50 TO 800 Volts CURRENT - 1.0 Ampere _ FEATURES_ SMB/DO-214AA • For surface m ounted applications • Low profile package • Built-in strain relief • Easy pick and place • U ltrafast recovery tim es fo r high efficiency
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DO-214AA
EIA-481)
315-\a
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Untitled
Abstract: No abstract text available
Text: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25ns sTrr =s70ns TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED) PEAK1 CY SURGE
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s70ns)
1N5807
1N5809
1N5811
1N6626
1N6627
1N6628
1N6629
1N6630
1N6631
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pcb warpage spec
Abstract: No abstract text available
Text: 1 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. D IST REVISIONS £5 J LTR DESCRIPTION G3 REDRAWN W/CHANGE E C R - 0 7 - 0 17829 DATE DWN APVD 31A U G 07 TS KB - 31 - >±i£ :
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B1115
31MAR2000
pcb warpage spec
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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SEN-5050
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SEN-5050 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-5050, REV. ENG. B HERMETIC POWER MOSFET N-CHANNEL - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052 DESCRIPTION: A 100 VOLT, 0.035 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.
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SEN-5050,
SEN-5050
S-100
MIL-STD-750,
O-254
--SHD225512,
MIL-STD-750
SEN-5050
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s812
Abstract: SS12 THRU S100 SS13 SS14 SS15 SS16
Text: SS12 THRU S100 SU RFACE MOUNT SCH O TTKY BARRIER RECTIFIER V O LTA G E - 20 TO 100 Volts CURRENT * 1.0 Ampere _ FEATURES_ • P la stic p a cka ge has U nderw riters Laboratory Flam m ability C la ssifica tio n 9 4 V -0 • For su rface m ounted ap plication s
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DO-214AC
MIL-STD-750,
s812
SS12 THRU S100
SS13
SS14
SS15
SS16
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