Contextual Info: u v m _ i b s TECHNOLOGY M ic ro p o w e r D C /D C C o n ve rte r A d ju sta b le a n d Fixed 5V, 12V F€flTUR€S D CSCRIPTIOfl • Operates at Supply Voltages from 2V to 30V ■ Consumes Only 110|oA Supply Current ■ Works in Step-Up or Step-Down Mode

S320S7

Abstract: S340S7 S360S7
Contextual Info: R S M ELECTRON/SENS ITRON T -0 3 -I5 " 1SE D § 7SG3t5G DDD07t0 ? | ^VSENS/TRON_ * SEMICONDUCTOR 221 West Industry Court • Deer Park, N Y 11729 Telephone: 516 586-7600 • Telex 96-7737 F A X 516 242 9798 TECHNICAL SPECIFICATIONS HIGH CU RREN T A X IA L LEAD

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

MIL-T-27

Abstract: H1000 INDUCTOR inductor H330 52kH tf5r
Contextual Info: DESIGNED FOR NATIONAL SEMICONDUCTOR MILITARY/AEROSPACE QUALIFIED SIMPLE SWITCHER Designed for use with M IL-STD-883C qualified National Semicon­ ductor Device numbers LM 15 75 and LM 15 77. Renco component operation validated by National Semiconductor.

RL-2580

Abstract: RL-1961 RL-2581 RL1961 RL1952 renco rl 2580 renco rl2448 National Semiconductor Applications RL-2445 RL2447
Contextual Info: MAY 1996 TRANSFORMERS & CHOKES FOR NATIONAL SEMICONDUCTOR* APPLICATIONS u ms </>•= oS rm SINCE 1955 Renco Electronics POWER LINE CHOKES FOR NATIONAL SEMICONDUCTOR APPLICATIONS T h is P o w e r Line C h o ke S e rie s uses high s a tu ra tio n flu x d e n s ity m a te ria l m a k in g th e m id e a l fo r use in

KS0066F00

Contextual Info: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The KS0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology. FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.

Contextual Info: MIL •M-38 5 IOw M B P T 16 April 1980 MILITARY SPECIFICATION MICROCIRCUITS, CMOS, ANALOG SWITCH WITH DRIVER, MONOLITHIC SILICON This specification is approved for use by aLl Depart­ ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for silicon, CMOS,

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Contextual Info: RC2324DP/DS Integral Modems Rockwell RC2324DP/DS 2400 bps Full-Duplex Modem Data Pump Device Set INTRODUCTION FEATURES The Rockwell RC2324DP/DS is a 2400 bps, lull-duplex, OEM, data pump modem device s e t The RC2324DP/DS operates over the public switched telephone network

R96FAX

Contextual Info: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field

Contextual Info: EPSON PF836-02 SEDI 670 Dot Matrix High Duty LCD Driver • 100 Output • 1/64 to 1/300 in display duty • CMOS High Voltage Resistant Process • OVERVIEW T he S E D 1 670 is a 100 output low-power resistance common row driver which is suitable for driving a very high

taa 723

Abstract: SRS660
Contextual Info: SRS660 ^S E N S IT R O N SEMICONDUCTOR TECHNICAL DATA DATASHEET 132 REVISION — 6/93 600 VOLT, 6 AMP GLASS HERMETIC SEALED AXIAL LEAD RECTIFIERS FEATURES • • • • DOUBLE PLUG, METALLURGICALLY BONDED CONSTRUCTION. HIGH VOLTAGE, HIGH CURRENT. HIGH SU R G E CAPABILITY.

SRS1100HE

Abstract: SRS160HE SRS180HE
Contextual Info: SRS160HE SRS180HE SRS1100HE ^S E N S IT R O N _ SEMICONDUCTOR TECHNICAL DATA DATASHEET 119 REVISION — 600 THROUGH 1000 VOLT 60 NANOSECOND AXIAL LEAD RECTIFIERS FEATURES • DOUBLE PLUG, METALLURGICALLY BONDED CONSTRUCTION. . AVALANCH ENERGY CAPABILITY.

Contextual Info: SENSITRON SEMICONDUCTOR SEN-3076 TECHNICAL DATA PART NUMBER: SEN-3076 PARALLEL REDUNDANT LEVEL TRANSLATOR DESCRIPTION: PARALLEL REDUNDANT LEVEL TRANSLATOR, HYBRID MICROCIRCUIT. o MAXIMUM RATINGS All ratings are at TA = 25 C unless otherwise specified. RATING

Contextual Info: S£NS^TfíQ^§gMlOÓNOUCTOR PEAK INVERSE VOLTAGE TYPE ' NUMBER . Vote . 150 SHCNA15HFT 15G SMCPA1SHË» 1 150 SHCOA6QFR 600 SHCNA6ÛFR *600 r J3HCPA6GFR' . ~ m •690 ‘ SHCMA68s 7 ' m SHÊPA6GE7' ’ 1 600 1000 EESSSEKn SHCNAIOOFH’* ' 1000 SH PAt00F»#|

Contextual Info: 1994 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS Continued GENERAL PURPOSE DEVICES (Trr £5000 ns) TYRE NUMBER PEAK INVERSE VOLTAGE VOLTS MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED)

1N5811

Contextual Info: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG HERMETIC SURFACE MOUNT RECTIFIERS MELFS GENERAL PURPOSE (Trr TYPE NUMBER PEAK INVERSE VOLTAGE 2000 nsec) MAXIMUM AVERAGE DC OUTPUT CURRENT AMPS VOLTS Ta = 55°c PEAK SINGLE CYCLE SURGE (8.3 mS) MAXIMUM FORWARD

Contextual Info: UF1A THRU UF1K SURFACE MOUNT ULTRAFAST RECTIFIER VOLTAGE - 50 TO 800 Volts CURRENT - 1.0 Ampere _ FEATURES_ SMB/DO-214AA • For surface m ounted applications • Low profile package • Built-in strain relief • Easy pick and place • U ltrafast recovery tim es fo r high efficiency

Contextual Info: 1995 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC AXIAL LEAD RECTIFIERS ULTRAFAST RECOVERY DEVICES 25ns sTrr =s70ns TYPE NUMBER PEAK INVERSE VOLTAGE MAX. AVG. DC OUTPUT CURRENT MAX. REVERSE CURRENT AT PIV MAX. PEAK FWD. VOLTAGE (PULSED) PEAK1 CY SURGE

pcb warpage spec

Contextual Info: 1 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. D IST REVISIONS £5 J LTR DESCRIPTION G3 REDRAWN W/CHANGE E C R - 0 7 - 0 17829 DATE DWN APVD 31A U G 07 TS KB - 31 - >±i£ :

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

SEN-5050

Contextual Info: SENSITRON SEMICONDUCTOR SEN-5050 CUSTOMER: BAE SYSTEMS - NASHUA, NH PART NUMBER SEN-5050, REV. ENG. B HERMETIC POWER MOSFET N-CHANNEL - Screened to S-100 Level procedure attached - PIND Testing per MIL-STD-750, Method 2052 DESCRIPTION: A 100 VOLT, 0.035 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.

s812

Abstract: SS12 THRU S100 SS13 SS14 SS15 SS16
Contextual Info: SS12 THRU S100 SU RFACE MOUNT SCH O TTKY BARRIER RECTIFIER V O LTA G E - 20 TO 100 Volts CURRENT * 1.0 Ampere _ FEATURES_ • P la stic p a cka ge has U nderw riters Laboratory Flam m ability C la ssifica tio n 9 4 V -0 • For su rface m ounted ap plication s