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    O5 SMD TRANSISTOR Search Results

    O5 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    O5 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    o5 smd transistor

    Abstract: 2SA1330 smd transistor marking 36 SMD Marking o7
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1330 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 1 0.55 High voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		2SA1330 OT-23 -10mA -50mA -10mA, o5 smd transistor 2SA1330 smd transistor marking 36 SMD Marking o7 PDF

    transistor r1012

    Abstract: npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559
    Text: AN7852 EVALUATION BOARD APPLICATION NOTE FEATURES CAPABILITIES AND APPLICATIONS • Dual Channel Analog Input • 10-Bit Resolution • Conversion RateUp to 20 MSPS • On-Board Clock Driver • On-Board Adjustable References • Input Buffers With Adjustable Offset Level


    Original     		AN7852 10-Bit SPT7852 10-bit transistor r1012 npn smd 2n2222 smd 2DG12 SMD d2b 2n2222 smd DG1 smd transistor SMD D8B SMD diode C715 AN7852 C2559 PDF

    IQXO 100C

    Abstract: IQXO-100C 2n3906 sot23 IQXO-100 2n3906 h11 CRYSTAL OSCILLATOR IQXO-100C MCDS08 IQXO100C omron inverter MINI J7 2n3906- h11
    Text: THS1030/31EVM Evaluation Module for the THS1030/THS1031 10ĆBit ADC User’s Guide 2000 AAP Data Conversion SLAU040 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		THS1030/31EVM THS1030/THS1031 10Bit SLAU040 IQXO 100C IQXO-100C 2n3906 sot23 IQXO-100 2n3906 h11 CRYSTAL OSCILLATOR IQXO-100C MCDS08 IQXO100C omron inverter MINI J7 2n3906- h11 PDF

    radpal

    Abstract: TRANSISTOR SMD MARKING CODE WL4 TRANSISTOR SMD MARKING CODE t15 TRANSISTOR SMD MARKING E0 transistor SMD t15 DF marking code smd transistor DATASHEET smd fuse marking 20 SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE oc TRANSISTOR SMD MARKING CODE SP
    Text: Standard Products UT22VP10 Universal RADPALTM Data Sheet November 2000 FEATURES q High speed Universal RADPAL - tPD: 15.5ns, 20ns, 25ns maximum - fMAX1: 33MHz maximum external frequency - Supported by industry-standard programmer Amorphous silicon anti-fuse


    Original     		UT22VP10 33MHz MIL-STD-883, 24-pin 100-mil 24-lead 28-lead radpal TRANSISTOR SMD MARKING CODE WL4 TRANSISTOR SMD MARKING CODE t15 TRANSISTOR SMD MARKING E0 transistor SMD t15 DF marking code smd transistor DATASHEET smd fuse marking 20 SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE oc TRANSISTOR SMD MARKING CODE SP PDF

    smd transistor marking A10

    Abstract: smd transistor marking A14 smd code A9 3 pin transistor marking code EA SMD Transistor wms128k8-15de WMS128K8-15 5962-89598 5962-9669105HXA qml-38534 0EU86
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added device type11. Change limits for ICC and ICCDR1 in table I. 98-06-22 K. A. Cottongim B Add: note to paragraph 1.2.2 and table I, conditions. Add device types 12 through 17. Add vendor CAGE code 0EU86. Add condition D to


    Original     		type11. 0EU86. 0EU86 smd transistor marking A10 smd transistor marking A14 smd code A9 3 pin transistor marking code EA SMD Transistor wms128k8-15de WMS128K8-15 5962-89598 5962-9669105HXA qml-38534 0EU86 PDF

    LM317 SMD

    Abstract: npn smd 2n2222 smd transistor 2N2222 SMD SMD CODE LM317 ad3303 SmD TRANSISTOR s2e SMD lm317 PALCE22V10-J 2n2222 smd SMD Transistor s2A
    Text: a 24-Bit Stereo DAC Evaluation Board EVAL-AD1853EB OVERVIEW The AD1853 EVAL-AD1853-EB evaluation board permits testing and demonstration of the high performance AD1853 24-bit Stereo DAC. An input signal is required in either optical or coaxial SPDIF format or alternatively directly via a 10-pin


    Original     		24-Bit EVAL-AD1853EB AD1853 EVAL-AD1853-EB) 10-pin 10-pin AD1853 LM317 SMD npn smd 2n2222 smd transistor 2N2222 SMD SMD CODE LM317 ad3303 SmD TRANSISTOR s2e SMD lm317 PALCE22V10-J 2n2222 smd SMD Transistor s2A PDF

    PC MOTHERBOARD CIRCUIT diagram SCHEMATICS

    Abstract: SN105125
    Text: User's Guide SLAU234A – October 2007 – Revised July 2010 DDC11xEVM-PDK User's Guide Figure 1. DDC11xEVM-PDK Photo The DDC11xEVM-PDK is an evaluation kit for evaluating the DDC112 dual channel and DDC114 (quad channel) current input 20-bit analog-to-digital (A/D) converters. The kit consists of a motherboard


    Original     		SLAU234A DDC11xEVM-PDK DDC112 DDC114 20-bit DDC112 DDC112EVM) DDC114 PC MOTHERBOARD CIRCUIT diagram SCHEMATICS SN105125 PDF

    Atmel 652

    Abstract: AT65609EHV AT65609EHV-DJ40SR Atmel+652
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		AT65609EHV MIL-PRF38535 M65608E Atmel 652 AT65609EHV AT65609EHV-DJ40SR Atmel+652 PDF

    5962-05208

    Abstract: AT60142G AT60142F AT60142F-15 AT60142F-DC15M-E
    Text: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns AT60142F – <15 ns (AT60142G in development, prototypes in Q4 2007) Very Low Power Consumption – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns


    Original     		AT60142F) AT60142G MIL-STD-883 AT60142F/G 4408F 5962-05208 AT60142F AT60142F-15 AT60142F-DC15M-E PDF

    Untitled

    Abstract: No abstract text available
    Text: AT65609EHV Rad Hard, 5V, 128K x 8 Very Low Power CMOS SRAM DATASHEET Features z Asynchronous SRAM z Operating Voltage: 5V z Read Access Time: 40 ns z Write Cycle Time: 30 ns z Very Low Power Consumption Pre-RAD z z Active: 275 mW (Max) Standby: 44 mW (Max)


    Original     		AT65609EHV MIL-PRF38535 M65608E PDF

    4408G

    Abstract: 5962-05208 AT60142F AT60142F-15 AT60142F-DC15M-E
    Text: Features • Operating Voltage: 3.3V • Access Time: – 15 ns AT60142F • Very Low Power Consumption • • • • • • • • • – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C


    Original     		AT60142F) MIL-STD-883 AT60142F 4408G 5962-05208 AT60142F-15 AT60142F-DC15M-E PDF

    diode in48

    Abstract: IN58 diode SN105125
    Text: User's Guide SBAU186 – March 2011 DDC264EVM User's Guide DDC264EVM This user's guide describes the characteristics, operation, and use of the DDC264EVM. This evaluation module EVM is an evaluation kit for evaluating the DDC264, a 64-channel, current input, 20-bit


    Original     		SBAU186 DDC264EVM DDC264EVM DDC264EVM. DDC264, 64-channel, 20-bit DDC264 DDC264EVMm diode in48 IN58 diode SN105125 PDF

    5962-05208

    Abstract: AT60142FT AT60142FT-17 AT60142FT-DC17M-E 7726A-AERO-07 FP36
    Text: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C


    Original     		MIL-STD-883 AT60142FT 5962-05208 AT60142FT-17 AT60142FT-DC17M-E 7726A-AERO-07 FP36 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • • – 15 ns for 3.3V biased only AT60142F – 17 ns for 5V Tolerant (AT60142FT) Very Low Power Consumption – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns


    Original     		AT60142F) AT60142FT) MIL-STD-883 AT60142F AT60142FT AT60142 4408C PDF

    AT60142F

    Abstract: AT60142F-15 AT60142F-DC15M-E AT60142FT AT60142FT-17
    Text: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • • – 15 ns for 3.3V biased only AT60142F – 17 ns for 5V Tolerant (AT60142FT) Very Low Power Consumption – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns


    Original     		AT60142F) AT60142FT) MIL-STD-883 AT60142F AT60142FT AT60142F/FT AT60142F AT60142F-15 AT60142F-DC15M-E AT60142FT AT60142FT-17 PDF

    5962-05208

    Abstract: AT60142FT AT60142FT-17 AT60142FT-DC17M-E
    Text: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C


    Original     		MIL-STD-883 AT60142FT 7726B 5962-05208 AT60142FT-17 AT60142FT-DC17M-E PDF

    4408B

    Abstract: AT60142F AT60142F-15 AT60142FT AT60142FT-17
    Text: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • • – 15 ns for 3.3V biased only AT60142F – 17 ns for 5V Tolerant (AT60142FT) Very Low Power Consumption – Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns


    Original     		AT60142F) AT60142FT) MIL-STD-883 AT60142F AT60142FT AT60142F/FT 4408B AT60142F AT60142F-15 AT60142FT AT60142FT-17 PDF

    7726C

    Abstract: 5962-05208 AT60142FT AT60142FT-17 AT60142FT-DS17M-E
    Text: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C


    Original     		MIL-STD-883 AT60142FT 512Kappear 7726C 5962-05208 AT60142FT-17 AT60142FT-DS17M-E PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125⋅C


    Original     		MIL-STD-883 AT60142HT 7841Câ PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 3.3V, 5V tolerant • Access Time: • • • • • • • • • • – 17 ns – 15 ns Very Low Power Consumption – Active: 610 mW Max @ 17 ns(1), 540 mW (Max) @ 25 ns – Standby: 3.3 mW (Typ) Wide Temperature Range: -55 to +125°C


    Original     		MIL-STD-883 AT60142HT 7841B PDF

    IC-3368

    Abstract: smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U
    Text: DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR i COMPOUND — ¿¿PA1600 r MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The juPA1600 is M onolithic N-channel Pow er M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits and Gate Protection Diode designed for LED, Relay,


    OCR Scan     		uPA1600 IC-3368 smd transistor 9j UPA1600GS iso 1207 PA-1600 20PIN MIL GRADE TRANSISTOR ARRAY PA1600 SMD transistor 6J U PDF

    nec a1640

    Abstract: transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor
    Text: DATA SHEET nec Æmsmrnm COMPOUND FIELD EFFECT POWER TRANSISTOR r ßPM 640 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The /¿PA1640 is M onolithic N-channel Power M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits w ith 2 A N D GATE. In groups of 4 circuits and they each have ENABLE term inal.


    OCR Scan     		uPA1640 PA1640GS 20-Pin nec a1640 transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor PDF

    transistor ey

    Abstract: smd transistor EY SG3081 Sense Diode Array cd
    Text: D evice T ype CD CD -j Un OJ NO D evice T ype D evice T ype CD CD -j Un CO NO en CD CD Ln Ui OJ ro D escriptio n s* o« CD CD Cn U ”i GO ro Cn D escriptio n D escriptio n is I” Ià s o SË 3 o p «£ » 7 3 5 o O ^ m S S K ey F e a t u r e s K ey F e a t u r e s


    OCR Scan     		SG5774 SG6509 100nA transistor ey smd transistor EY SG3081 Sense Diode Array cd PDF

    uA 741 CN IC

    Abstract: SMD TRANSISTOR MARKING 1L transistor smd marking 431 463-2 MAG
    Text: S913T/S913TR T e MIC S e m i c o n d u c t o r s MOSMIC for TV-Tliner Prestage with 9 V Supply Voltage M O SM IC - M O S Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. *• Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.


    OCR Scan     		S913T/S913TR S913T S913TR 26-Mar-97 uA 741 CN IC SMD TRANSISTOR MARKING 1L transistor smd marking 431 463-2 MAG PDF