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    O2W TRANSISTOR Search Results

    O2W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    O2W TRANSISTOR Datasheets Context Search

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    n10n

    Abstract: 2SK784 transistor 2sk784
    Text: 6427525 N E C ELECTRONICS INC 98D 18928 D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR IB DESCRIPTION FEA TU R ES 2SK784 E | b i 2 ?sas OOlMao 3 I The 2SK784 is N-channel MOS Field Effect Power Transistor designed for switching power supplies DC-DC converters.


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    PDF 2SK784 2SK784 Curre00 n10n transistor 2sk784