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    O0899 Search Results

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    2SA1177

    Abstract: TA-2005 N851G
    Text: 注文コード No.N 8 5 1 G 2SA1177 No. N851G O0899 単品カタログ No.C851F とさしかえてください。 2SA1177 PNP エピタキシァルプレーナ形シリコントランジスタ 高周波一般増幅用 用途 ・FM RF 増幅 , ミキサ , 発振 , コンバータ , IF 増幅用に最適である。


    Original     		PDF 2SA1177 N851G O0899 C851F 230MHz ITR02986 ITR02985 ITR02987 100MHz 2SA1177 TA-2005 N851G

    transistor 2sc2909

    Abstract: 2SA1207 2SC2909 778D N778
    Text: 注文コード No.N 7 7 8 E 2SA1207 / 2SC2909 No. N778E O0899 半導体ニューズ No.778A ’ 87 - 88 データブック個別半導体素子トランジスタ編 No.778D とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


    Original     		PDF 2SA1207 2SC2909 N778E O0899 AF60W 2SA1207 ITR03001 transistor 2sc2909 2SC2909 778D N778

    2SC3135

    Abstract: 1049c 2SA1253 N1049D
    Text: 注文コード No.N 1 0 4 9 D 2SA1253 / 2SC3135 No. N1049D O0899 ※単品カタログ No.1049C とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1253 / 2SC3135 特長 低周波一般増幅用


    Original     		PDF 2SA1253 2SC3135 N1049D O0899 1049C 2SA1253 ITR03102 2SC3135 1049c N1049D

    IC 7812

    Abstract: 2SA1208 2SC2910 7812 ic IC 7814 IC 7811 si 7814 2006B N781F 2SA1208/2SC2910
    Text: 注文コード No.N 7 8 1 F 2SA1208 / 2SC2910 No. N781F O0899 半導体ニューズ No.781E とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 2SA1208 / 2SC2910 特長 高電圧スイッチング


    Original     		PDF 2SA1208 2SC2910 N781F O0899 2SA1208 2006B ITR03017 IC 7812 2SC2910 7812 ic IC 7814 IC 7811 si 7814 2006B N781F 2SA1208/2SC2910

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6343A SBE002 Schottky Barrier Diode http://onsemi.com 50V, 1A, Low IR, Single CPH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • • Low forward voltage (VF max=0.55V)


    Original     		PDF EN6343A SBE002 SBE002-applied

    Untitled

    Abstract: No abstract text available
    Text: SBE002 Ordering number : EN6343A SANYO Semiconductors DATA SHEET SBE002 Schottky Barrier Diode 50V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • • Low forward voltage (VF max=0.55V)


    Original     		PDF EN6343A SBE002 SBE002-applied

    SVC245

    Abstract: No abstract text available
    Text: Ordering number:ENN6300A Silicon Diffused Junction Type SVC245 Varactor Diode IOCAP for FM Receiver Electronic Tuning Package Dimensions • Twin type with a good linearity of C-V characteristic. Excels in large input characteristic. · Small package (CP), permitting SVC245-applied sets


    Original     		PDF ENN6300A SVC245 SVC245-applied SVC245] SVC245

    2SC3134

    Abstract: 2SA1252 ITR03076 7013a-009
    Text: 2SA1252 / 2SC3134 注文コード No. N 1 0 4 8 D 三洋半導体データシート 半導体ニューズ No.N1048C とさしかえてください。 2SA1252 / 2SC3134 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 高 VEBO, 低周波一般増幅用


    Original     		PDF 2SA1252 2SC3134 N1048C 2SA1252 ITR03086 ITR03087 2SC3134 ITR03076 7013a-009

    SBE803

    Abstract: MM1294A
    Text: SBE803 Ordering number : ENN6331A SBE803 Schottky Barrier Diode 90V, 200mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • • • Low forward voltage (VF max=0.7V). Fast reverse recovery time (trr max=10ns).


    Original     		PDF SBE803 ENN6331A 200mA SBE803 MM1294A

    IT00608

    Abstract: IR300U
    Text: Ordering number:ENN6343 Schottky Barrier Diode SBE002 50V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1295 [SBE002] 0.15 2.9 · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns).


    Original     		PDF ENN6343 SBE002 SBE002] SBE002-applied IT00608 IR300U

    2SA1016

    Abstract: 2SC2362 2SA1016K 2362K 2SC2362K 1016K SC22-3 6D8B
    Text: 注文コード No. N 0 5 7 2 F 2SA1016,1016K / 2SC2362,2362K 三洋半導体データシート 半導体ニューズ No.N572D をさしかえてください。 2SA1016, 1016K 2SC2362, 2362K PNP / NPN エピタキシァルプレーナ型シリコントランジスタ


    Original     		PDF 2SA1016 1016K 2SC2362 2362K N572D 2SA1016, 1016K 2SC2362, 2SA1016K 2362K 2SC2362K SC22-3 6D8B

    diode 47-16

    Abstract: SVC231 varactor diode yf 104 z
    Text: Ordering number:ENN5527A Silicon Diffused Junction Type Varactor Diode SVC231 FM Receiver Electronic Tuning Applications Package Dimensions unit:mm 1169A 0.4 3 0.5 [SVC231] 0.16 0 to 0.1 1.5 2.5 • Twin type varactor diode having an excellent large input characteristic and intended for use in lowvoltage high-voltage FM electronic tuning applications.


    Original     		PDF ENN5527A SVC231 SVC231] SVC231applied SVC231 diode 47-16 varactor diode yf 104 z

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6343B SBE002 Schottky Barrier Diode http://onsemi.com 50V, 1A, Low IR, Single CPH6 Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • • • Halogen free compliance Low forward voltage (VF max=0.55V)


    Original     		PDF EN6343B SBE002 SBE002-applied

    2SA1011

    Abstract: 2SC2344 2SA10 2SA101 2SC22 544f
    Text: 注文コード No.N 544G 2SA1011 / 2SC2344 三洋半導体データシート 半導体ニューズ No.544 ’ 91 大信号トランジスタ Vol.1 データブック No.544F とさしかえてください。 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


    Original     		PDF 2SA1011 2SC2344 2SA1011 300mA 500mA, ITR02948 ITR02947 2SC2344 2SA10 2SA101 2SC22 544f

    SVC245

    Abstract: No abstract text available
    Text: Ordering number:ENN6300A Silicon Diffused Junction Type SVC245 Varactor Diode IOCAP for FM Receiver Electronic Tuning Package Dimensions • Twin type with a good linearity of C-V characteristic. Excels in large input characteristic. · Small package (CP), permitting SVC245-applied sets


    Original     		PDF ENN6300A SVC245 SVC245-applied SVC245] SVC245

    62944

    Abstract: SVC241
    Text: Ordering number:ENN6294 Silicon Diffused Junction Type SVC241 Varactor Diode For AM Up Conversion Tuning Use Package Dimensions • Twin type with a good linearity of C-V characteristic. Excels in large input characteristic. · Small package CP allows the applied sets to be


    Original     		PDF ENN6294 SVC241 SVC241] 62944 SVC241

    6331-1

    Abstract: SBE803 marking SB
    Text: Ordering number:ENN6331 Schottky Barrier Diode SBE803 90V, 200mA Rectifier Package Dimensions unit:mm 1294 [SBE803] 2.9 Features 5 0.15 3 0.05 0.6 1.6 0.6 • Low forward voltage VF max=0.7V . · Fast reverse recovery time (trr max=10ns). · Low switching noise.


    Original     		PDF ENN6331 SBE803 200mA SBE803] 6331-1 SBE803 marking SB

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN6343 Schottky Barrier Diode SBE002 50V, 1A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1295 [SBE002] 0.15 2.9 · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=10ns).


    Original     		PDF ENN6343 SBE002 SBE002] SBE002-applied

    Untitled

    Abstract: No abstract text available
    Text: SBE002 Ordering number : EN6343A SANYO Semiconductors DATA SHEET SBE002 Schottky Barrier Diode 50V, 1A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • • • Low forward voltage (VF max=0.55V)


    Original     		PDF SBE002 EN6343A SBE002-applied