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    NXP TRANSISTOR MARKING 6C Search Results

    NXP TRANSISTOR MARKING 6C Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NXP TRANSISTOR MARKING 6C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.


    Original     		PDF PBSS9110X SC-62/ O-243) PBSS8110X. PBSS9110X

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS9110Y OT363 SC-88) OT363 PBSS9110Y

    SMD TRANSISTOR MARKING 4c

    Abstract: PBSS8110X PBSS9110X
    Text: PBSS9110X 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X.


    Original     		PDF PBSS9110X SC-62/ O-243) PBSS8110X. PBSS9110X SMD TRANSISTOR MARKING 4c PBSS8110X

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110Z OT223 SC-73) PBSS8110Z. PBSS9110Z

    PBSS9110Y

    Abstract: No abstract text available
    Text: PBSS9110Y 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS9110Y OT363 SC-88) OT363 PBSS9110Y

    Untitled

    Abstract: No abstract text available
    Text: PBSS8110D 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features ̈ ̈ ̈ ̈ SOT457 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS8110D OT457 SC-74) OT457 PBSS8110D

    PB9110

    Abstract: PBSS9110Z PBSS8110Z SC-73
    Text: PBSS9110Z 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110Z OT223 SC-73) PBSS8110Z. PBSS9110Z PB9110 PBSS8110Z SC-73

    Untitled

    Abstract: No abstract text available
    Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features ̈ ̈ ̈ ̈ SOT363 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS8110Y OT363 SC-88) OT363 PBSS8110Y

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D

    PBSS8110D

    Abstract: PBSS9110D SC74 marking 345
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D PBSS8110D SC74 marking 345

    PBSS8110D

    Abstract: No abstract text available
    Text: PBSS8110D 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features „ „ „ „ SOT457 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS8110D OT457 SC-74) OT457 PBSS8110D

    Untitled

    Abstract: No abstract text available
    Text: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.


    Original     		PDF PBSS8110X SC-62/ O-243) PBSS9110X. PBSS8110X

    C 102 transistor equivalent table

    Abstract: PBSS8110Y PPBSS8110Y
    Text: PBSS8110Y 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features „ „ „ „ SOT363 package Low collector-emitter saturation voltage VCEsat


    Original     		PDF PBSS8110Y OT363 SC-88) OT363 PBSS8110Y C 102 transistor equivalent table PPBSS8110Y

    PBSS8110X

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 PBSS9110X
    Text: PBSS8110X 100 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.


    Original     		PDF PBSS8110X SC-62/ O-243) PBSS9110X. PBSS8110X TRANSISTOR SMD CODE PACKAGE SOT89 PBSS9110X

    SMD TRANSISTOR MARKING 6C

    Abstract: TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.


    Original     		PDF PEMH18; PUMH18 PEMH18 OT666 OT363 PEMD18 PEMB18 SC-88 PUMD18 SMD TRANSISTOR MARKING 6C TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18

    NXP TRANSISTOR MARKING 6C

    Abstract: PEMB18 PEMD18 PEMH18 PUMD18 PUMB18 PUMH18 NXP MARKING H5 PEMB1 PEMH1
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Rev. 03 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN Resistor-Equipped Transistors RET . Table 1. Product overview Type number Package


    Original     		PDF PEMH18; PUMH18 PEMH18 OT666 PEMD18 PEMB18 OT363 SC-88 PUMD18 NXP TRANSISTOR MARKING 6C PEMB18 PEMD18 PEMH18 PUMD18 PUMB18 PUMH18 NXP MARKING H5 PEMB1 PEMH1

    c33725 w 78

    Abstract: BC337 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


    Original     		PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 w 78 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817

    c33725

    Abstract: c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


    Original     		PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor

    PDTA123EE

    Abstract: SOT883 PDTA123ET PDTA123E PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDF PDTA123E R75/07/pp14 PDTA123EE SOT883 PDTA123ET PDTA123EEF PDTA123EK PDTA123EM PDTA123ES PDTA123EU SC-75

    PDTA123EE

    Abstract: PDTC123ET PDTC123EE PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DAT PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product data sheet Supersedes data of 2004 Apr 07 2004 Aug 02 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ


    Original     		PDF PDTA123E R75/07/pp14 PDTA123EE PDTC123ET PDTC123EE PDTA123ET

    smd transistor marking a7h

    Abstract: smd diode marking D7H smd diode marking d4h smd diode marking a4h smd transistor marking deh Transistors smd A7H smd transistor marking a1h smd transistor marking a2h transmitter/smd diode marking D7H
    Text: PCA9674; PCA9674A Remote 8-bit I/O expander for Fm+ I2C-bus with interrupt Rev. 7 — 30 May 2013 Product data sheet 1. General description The PCA9674/74A provides general-purpose remote I/O expansion via the two-wire bidirectional I2C-bus serial clock (SCL , serial data (SDA).


    Original     		PDF PCA9674; PCA9674A PCA9674/74A PCA9674 smd transistor marking a7h smd diode marking D7H smd diode marking d4h smd diode marking a4h smd transistor marking deh Transistors smd A7H smd transistor marking a1h smd transistor marking a2h transmitter/smd diode marking D7H

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    chn 429

    Abstract: MMC 4067 E UM10503
    Text: UM10503 LPC43xx ARM Cortex-M4/M0 multi-core microcontroller Rev. 1.7 — 17 October 2013 User manual Document information Info Content Keywords LPC43xx, LPC4300, LPC4370, LPC4350, LPC4330, LPC4320, LPC4310, LPC4357, LPC4353, LPC4337, LPC4333, LPC4327, LPC4325, LPC4323,


    Original     		PDF UM10503 LPC43xx LPC43xx, LPC4300, LPC4370, LPC4350, LPC4330, LPC4320, LPC4310, LPC4357, chn 429 MMC 4067 E UM10503

    Untitled

    Abstract: No abstract text available
    Text: TPS65155 SLVSB29 – JANUARY 2012 www.ti.com LCD Bias Solution with Level Shifters for GOA Panels Check for Samples: TPS65155 FEATURES DESCRIPTION • • • • • The TPS65155 provides an integrated bias and level shifter solution for GOA panels. 1 •


    Original     		PDF TPS65155 SLVSB29 TPS65155 40-Pin