BC817
Abstract: No abstract text available
Text: ' BC817-25QA; BC817-40QA ' 1 45 V, 500 mA NPN general-purpose transistors Rev. 1 — 3 September 2013 Product data sheet 1. Product profile 1.1 General description 500 mA NPN general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
BC817-25QA;
BC817-40QA
DFN1010D-3
OT1215)
BC817-25QA
BC807-25QA
BC807-40QA
BC817
|
PDF
|
bc807
Abstract: No abstract text available
Text: ' BC807-25QA; BC807-40QA ' 1 45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible
|
Original
|
BC807-25QA;
BC807-40QA
DFN1010D-3
OT1215)
BC807-25QA
BC817-25QA
BC817-40QA
bc807
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DP AK BT151S-650S SCR 20 June 2014 Product data sheet 1. General description Passivated sensitive gate Silicon Controlled Rectifier SCR in a SOT428 (DPAK) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. These devices are
|
Original
|
BT151S-650S
OT428
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 3 — 26 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3012
BGA3012
|
PDF
|
YAGEO RC0402FR
Abstract: No abstract text available
Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3012
BGA3012
YAGEO RC0402FR
|
PDF
|
YAGEO RC0402FR
Abstract: BGA3018 470 R2
Text: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3018
BGA3018
YAGEO RC0402FR
470 R2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 3 — 26 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3018
BGA3018
|
PDF
|
SLSL
Abstract: No abstract text available
Text: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3015
BGA3015
SLSL
|
PDF
|
BLM18HD182SN1D
Abstract: RC0402FR-07300RL YAGEO RC0402FR NXP MARKING 11* 3PIN marking code 6w LQG15HS3N9S02D
Text: SO T8 9 BGA3012 1 GHz 12 dB gain wideband amplifier MMIC Rev. 2 — 15 April 2013 Product data sheet 1. Product profile 1.1 General description The BGA3012 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3012
BGA3012
BLM18HD182SN1D
RC0402FR-07300RL
YAGEO RC0402FR
NXP MARKING 11* 3PIN
marking code 6w
LQG15HS3N9S02D
|
PDF
|
YAGEO RC0402FR
Abstract: antenna Yageo
Text: SO T8 9 BGA3018 1 GHz 18 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3018 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3018
BGA3018
YAGEO RC0402FR
antenna Yageo
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 1 — 19 March 2013 Preliminary data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3015
BGA3015
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SO T8 9 BGA3015 1 GHz 15 dB gain wideband amplifier MMIC Rev. 3 — 25 September 2013 Product data sheet 1. Product profile 1.1 General description The BGA3015 MMIC is a wideband amplifier with internal biasing. It is designed specifically for high linearity CATV line extenders and drop amplifiers over a frequency
|
Original
|
BGA3015
BGA3015
|
PDF
|
marking 3U 3T 3C diode
Abstract: marking 3U 3T 3C diode 3E 3G smd marking code 3Z smd diode marking codes 3t zener diode SMD marking code 27 4B marking 3U 3T diode smd zener diode code 4d NXP SMD ZENER DIODE MARKING CODE nxp Standard Marking 3w zener diode smd marking 4d
Text: SO D3 23F TDZxJ series Single Zener diodes Rev. 2 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits
|
Original
|
OD323F
SC-90)
AEC-Q101
marking 3U 3T 3C diode
marking 3U 3T 3C diode 3E 3G
smd marking code 3Z
smd diode marking codes 3t
zener diode SMD marking code 27 4B
marking 3U 3T diode
smd zener diode code 4d
NXP SMD ZENER DIODE MARKING CODE
nxp Standard Marking 3w
zener diode smd marking 4d
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU520Y
OT363
BFU520Y
AEC-Q101
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU590G
OT223
BFU590G
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU590Q
BFU590Q
AEC-Q101
BFU590QX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU590Q
BFU590Q
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits
|
Original
|
BFU690F
OT343F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 3 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Observe precautions for handling
|
Original
|
PMBFJ620
OT363
JESD625-A
|
PDF
|
AN11436
Abstract: No abstract text available
Text: 62 7 % BFU530X NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU530X
OT143B
BFU530X
AEC-Q101
AN11436
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 % BFU520 NPN wideband silicon RF transistor Rev. 2 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU520 is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU520
OT143B
BFU520
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 % BFU530 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU530
OT143B
BFU530
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 % BFU550 NPN wideband silicon RF transistor Rev. 1 — 5 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU550
OT143B
BFU550
AEC-Q101
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium
|
Original
|
BFU520A
BFU520A
AEC-Q101
|
PDF
|
