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    NXP P MOSFET Search Results

    NXP P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    NXP P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    charging ic laptop motherboard

    Abstract: ic laptop motherboard 12V cooler MOTOR TSOP6 SOT23 package s1 sot363 voltage controller PMN23UN PMN34LN PMN34UN PMN40LN
    Text: NXP 30-, 20-, and 12-V N- and P-channel MOSFETs PMNseries in TSOP6 packages Ultra-small µTrenchMOS MOSFETs in a TSOP6 package and 94% lower RDS ON than SOT23 Combining our expertise in package miniaturization and advanced Trench technology, these ultra-small µTrenchMOS™ MOSFETs, housed in tiny TSOP6 packages, deliver an on resistance


    Original     		PDF MSD991 charging ic laptop motherboard ic laptop motherboard 12V cooler MOTOR TSOP6 SOT23 package s1 sot363 voltage controller PMN23UN PMN34LN PMN34UN PMN40LN

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: AN11156 Using Power MOSFET Zth Curves Rev. 1 — 28 September 2012 Application note Document information Info Content Keywords Power MOSFET, Zth curves, Junction temperature, Single shot, Rectangular pulse, Composite waveform, Pulse burst, Zth j-mb , Superimposition, Thermal impedance


    Original     		PDF AN11156

    Untitled

    Abstract: No abstract text available
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 2 — 23 June 2011 Application note Document information Info Content Keywords BISS, MOSFET-Schottky, low VCEsat, battery charger, Li-Ion battery


    Original     		PDF AN10910

    AN11261

    Abstract: AN11156
    Text: AN11261 Using RC Thermal Models Rev. 2 — 19 May 2014 Application note Document information Info Content Keywords RC thermal, SPICE, Models, Zth, Rth, MOSFET, Power Abstract Analysis of the thermal performance of power semiconductors is necessary to efficiently and safely design any system utilizing such


    Original     		PDF AN11261 AN11261 AN11156

    photo interrupter module

    Abstract: wiring circuit stepper motor "Photo Interrupter" Application Note mosfet discrete totem pole CIRCUIT PCA9539 principle stepper motor unipolar stepper motor programming in c 7.5 stepper motor PCA9538 optical interrupter darlington
    Text: AN10814 Driving stepper motors using NXP I2C-bus GPIO expanders Rev. 01 — 11 September 2009 Application note Document information Info Content Keywords stepper, stepper motor, GPIO, push-pull, quasi-bidirectional, MOSFET, optical interrupter, Fast-mode Plus, Fm+, I2C-bus


    Original     		PDF AN10814 20090information AN10814 photo interrupter module wiring circuit stepper motor "Photo Interrupter" Application Note mosfet discrete totem pole CIRCUIT PCA9539 principle stepper motor unipolar stepper motor programming in c 7.5 stepper motor PCA9538 optical interrupter darlington

    2N7002BK

    Abstract: 771-2N7002BK215 trench relay
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002BK O-236AB) AEC-Q101 771-2N7002BK215 2N7002BK trench relay

    2N7002BKW

    Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101 771-2N7002BKW115 2N7002BKW 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA

    tea1795

    Abstract: BSS123 NXP application note tea1761 TEA1795T 2N7002 BSN20 BSS123 VC10 2N7002 NXP AN10954
    Text: AN10954 GreenChip SR TEA1795T dual synchronous rectification driver IC Rev. 1 — 14 December 2010 Application note Document information Info Content Keywords TEA1795T, MOSFET, driver IC, synchronous, rectifier, resonant, converter Abstract The TEA1795T is a dual synchronous rectifier driver IC for a resonant


    Original     		PDF AN10954 TEA1795T TEA1795T, tea1795 BSS123 NXP application note tea1761 2N7002 BSN20 BSS123 VC10 2N7002 NXP AN10954

    smd code marking WV

    Abstract: nxp p mosfet 2N7002P
    Text: 2N7002P 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002P O-236AB) AEC-Q101 2N7002P smd code marking WV nxp p mosfet

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002BK O-236AB) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101

    2N7002BKS

    Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101 2N7002BKS dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt

    Untitled

    Abstract: No abstract text available
    Text: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002PS OT363 SC-88) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101

    2N7002PW

    Abstract: x8 sot323
    Text: 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF 2N7002PW OT323 SC-70) AEC-Q101 2N7002PW x8 sot323

    MARKING SMD x9

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002BKW OT323 SC-70) AEC-Q101 MARKING SMD x9 MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV 2n7002bkw transistor smd code marking nc

    2N7002PT

    Abstract: No abstract text available
    Text: 2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF 2N7002PT OT416 SC-75) AEC-Q101 771-2N7002PT-115 2N7002PT

    BYC8600

    Abstract: No abstract text available
    Text: TO -22 AC BYC8-600 Hyperfast power diode 6 May 2013 Product data sheet 1. General description Hyperfast power diode in a SOD59 2-lead TO-220AC plastic package. 2. Features and benefits • • Low reverse recovery current and low thermal resistance Reduces switching losses in associated MOSFET


    Original     		PDF BYC8-600 O-220AC) BYC8600

    smd transistor marking zg

    Abstract: transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKV OT666 AEC-Q101 smd transistor marking zg transistor smd zG TRANSISTOR SMD MARKING zg 2n7002bkv NXP SMD mosfet MARKING CODE NXP SMD TRANSISTOR MARKING CODE s1 2N7002BKV/DG/B2115

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: smd code marking WV
    Text: BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF BSS138P O-236AB) AEC-Q101 MOSFET TRANSISTOR SMD MARKING CODE A1 smd code marking WV

    BSS138PW

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
    Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF BSS138PW OT323 SC-70) AEC-Q101 771-BSS138PW115 BSS138PW TRANSISTOR SMD CODE PACKAGE SOT323