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    NXP MARKING DISCRETE SEMICONDUCTORS Search Results

    NXP MARKING DISCRETE SEMICONDUCTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    NXP MARKING DISCRETE SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NXP BAV199 date code

    Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package


    Original     		PDF M3D088 BAV199 613514/04/pp8 NXP BAV199 date code BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 PINNING MARKING • Low forward voltage


    Original     		PDF M3D088 PMBD353 613514/04/pp7

    BAV199

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package


    Original     		PDF M3D088 BAV199 613514/04/pp8 BAV199

    PMBD353

    Abstract: NXP PMBD353
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 MARKING • Low forward voltage


    Original     		PDF M3D088 PMBD353 613514/04/pp7 PMBD353 NXP PMBD353

    1PS76SB10

    Abstract: SC-76 marking nxp package nxp marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 1PS76SB10 Schottky barrier diode Product data sheet Supersedes data of 1996 Oct 14 2004 Jan 26 NXP Semiconductors Product data sheet Schottky barrier diode 1PS76SB10 FEATURES PINNING • Low forward voltage PIN • Guard ring protected


    Original     		PDF 1PS76SB10 MGU328 OD323) OD323 R76/02/pp7 1PS76SB10 SC-76 marking nxp package nxp marking code

    1PS79SB31

    Abstract: smd diode code g3 NXP SMD DIODE MARKING CODE MARKING CODE G3 MARKING CODE 11 NXP SMD
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB31 Schottky barrier diode Product data sheet 2002 Jan 11 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB31 ; FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package.


    Original     		PDF M3D319 1PS79SB31 MAM403 OD523 SC-79) 613514/01/pp7 1PS79SB31 smd diode code g3 NXP SMD DIODE MARKING CODE MARKING CODE G3 MARKING CODE 11 NXP SMD

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D319 1PS79SB31 Schottky barrier diode Product data sheet 2002 Jan 11 NXP Semiconductors Product data sheet Schottky barrier diode 1PS79SB31 ; FEATURES • Very low forward voltage • Guard ring protected • Ultra small SMD package.


    Original     		PDF M3D319 1PS79SB31 MAM403 OD523 SC-79) 613514/01/pp7

    nxp Standard Marking

    Abstract: smd schottky diode marking BP "MARKING CODE L5" smd marking l5 marking code 4 SC-79 MHC457 PMEG2005EB
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A


    Original     		PDF M3D319 PMEG2005EB OD523 SC-79) PMEG2005EB 613514/02/pp7 771-PMEG2005EBT/R nxp Standard Marking smd schottky diode marking BP "MARKING CODE L5" smd marking l5 marking code 4 SC-79 MHC457

    MARKING C SOD882

    Abstract: nxp Standard Marking
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882


    Original     		PDF M3D891 BAT54L MDB391 BAT54L OD882 613514/01/pp7 771-BAT54L-T/R MARKING C SOD882 nxp Standard Marking

    marking code 4 SC-79

    Abstract: smd diode code b1 PMEG3002AEB nxp Standard Marking
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG3002AEB Low VF MEGA Schottky barrier diode Product data sheet 2002 May 06 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG3002AEB PINNING • Forward current: 0.2 A PIN • Reverse voltage: 30 V


    Original     		PDF M3D319 PMEG3002AEB MGU328 613514/01/pp7 marking code 4 SC-79 smd diode code b1 PMEG3002AEB nxp Standard Marking

    PMEG2015EA

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT PMEG2015EA Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 20 2004 Feb 03 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG2015EA PINNING • Forward current: 1.5 A


    Original     		PDF PMEG2015EA sym001 R76/02/pp7 PMEG2015EA

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES


    Original     		PDF M3D187 BC859W; BC860W OT323 BC849W BC850W. 115002/00/04/pp7

    BAS521

    Abstract: smd diode code l4 NXP SMD diode MARKING CODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS521 High voltage switching diode Product data sheet 2003 Aug 12 NXP Semiconductors Product data sheet High voltage switching diode BAS521 FEATURES PINNING • High switching speed: max. 50 ns ; PIN • High continuous reverse voltage: 300 V


    Original     		PDF M3D319 BAS521 MAM408 BAS521 613514/01/pp8 smd diode code l4 NXP SMD diode MARKING CODE

    S3 marking DIODE

    Abstract: BAT54L S3 DIODE schottky MARKING C SOD882
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882


    Original     		PDF M3D891 BAT54L OD882 MDB391 613514/01/pp7 S3 marking DIODE BAT54L S3 DIODE schottky MARKING C SOD882

    BC849BW

    Abstract: BC849CW BC849W BC850BW BC850CW BC850W BC859W BC860W
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES


    Original     		PDF M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7 BC849BW BC849CW BC849W BC850BW BC850CW BC850W BC860W

    BC849W

    Abstract: BC850W BC859BW BC859CW BC859W BC860BW BC860CW BC860W marking 4d npn
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W FEATURES


    Original     		PDF M3D187 BC859W; BC860W OT323 BC849W BC850W. 115002/00/04/pp7 BC850W BC859BW BC859CW BC859W BC860BW BC860CW BC860W marking 4d npn

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D891 BOTTOM VIEW 1PS10SB82 Schottky barrier diode Product data sheet 2003 Aug 20 NXP Semiconductors Product data sheet Schottky barrier diode 1PS10SB82 FEATURES DESCRIPTION • Low forward voltage An epitaxial Schottky barrier diode encapsulated in a


    Original     		PDF M3D891 1PS10SB82 OD882 MDB391 613514/01/pp7

    PMEG2005EB

    Abstract: code L5 smd marking l5
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A


    Original     		PDF M3D319 PMEG2005EB MAM403 613514/02/pp7 PMEG2005EB code L5 smd marking l5

    PMEG2005EB

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D319 PMEG2005EB Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 Feb 20 2003 Apr 04 NXP Semiconductors Product data sheet Low VF MEGA Schottky barrier diode FEATURES PMEG2005EB PINNING • Forward current: 0.5 A


    Original     		PDF M3D319 PMEG2005EB MAM403 613514/02/pp7 PMEG2005EB

    NXP MARKING Discrete Semiconductors

    Abstract: 1PS10SB82 2N7002 NXP MARKING
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB82 Schottky barrier diode Product data sheet 2003 Aug 20 NXP Semiconductors Product data sheet Schottky barrier diode 1PS10SB82 FEATURES DESCRIPTION • Low forward voltage An epitaxial Schottky barrier diode encapsulated in a


    Original     		PDF M3D891 1PS10SB82 OD882 MDB391 613514/01/pp7 NXP MARKING Discrete Semiconductors 1PS10SB82 2N7002 NXP MARKING

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D102 BC849W; BC850W NPN general purpose transistors Product data sheet Supersedes data of 1997 Jun 20 1999 Apr 12 NXP Semiconductors Product data sheet NPN general purpose transistors BC849W; BC850W FEATURES PINNING


    Original     		PDF M3D102 BC849W; BC850W OT323 BC859W BC860W. 115002/00/03/pp7

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D891 BOTTOM VIEW BAT54L Schottky barrier diode Product data sheet 2003 Jun 23 NXP Semiconductors Product data sheet Schottky barrier diode BAT54L FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD882


    Original     		PDF M3D891 BAT54L OD882 MDB391 613514/01/pp7

    PMEG2010EA

    Abstract: SC-76
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMEG2010EA Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2002 Dec 10 2004 Feb 06 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG2010EA PINNING • Forward current: 1 A


    Original     		PDF PMEG2010EA MGU328 R76/02/pp7 PMEG2010EA SC-76

    PMEG2015EA

    Abstract: SC-76
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMEG2015EA Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 20 2004 Feb 03 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG2015EA PINNING • Forward current: 1.5 A


    Original     		PDF PMEG2015EA sym001 R76/02/pp7 PMEG2015EA SC-76