I1228
Abstract: No abstract text available
Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
PDF
|
CLF1G0035-100
CLF1G0035-100
I1228
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
PDF
|
CLF1G0035S-50
CLF1G0035S-50
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
PDF
|
CLF1G0035S-100
CLF1G0035S-100
|
bga6589
Abstract: NXP MARKING 11* 3PIN MMIC marking code C3 sot89
Text: BGA6589 MMIC wideband medium power amplifier Rev. 3 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
|
Original
|
PDF
|
BGA6589
BGA6589
BGA6x89
NXP MARKING 11* 3PIN
MMIC marking code C3 sot89
|
Untitled
Abstract: No abstract text available
Text: BGA6589 MMIC wideband medium power amplifier Rev. 3 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
|
Original
|
PDF
|
BGA6589
BGA6589
BGA6x89
|
smd marking codes list sot363
Abstract: rf mmic marking code 09 SOT363
Text: BGM1013 MMIC wideband amplifier Rev. 5 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
|
Original
|
PDF
|
BGM1013
OT363
smd marking codes list sot363
rf mmic marking code 09 SOT363
|
MARKING CODE c5 sc-62
Abstract: BGA6589 marking 478 mmic SMD 5056 MMIC marking 81 BGA2031 NXP MARKING 11* 3PIN 8948
Text: BGA6589 MMIC wideband medium power amplifier Rev. 02 — 25 May 2009 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
|
Original
|
PDF
|
BGA6589
BGA6589
BGA6x89
MARKING CODE c5 sc-62
marking 478 mmic
SMD 5056
MMIC marking 81
BGA2031
NXP MARKING 11* 3PIN
8948
|
BGA6289
Abstract: BGA2031
Text: BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
|
Original
|
PDF
|
BGA6289
BGA6289
BGA6x89
BGA2031
|
marking 259 sot363
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
|
Original
|
PDF
|
BGM1014
OT363
marking 259 sot363
|
Untitled
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
|
Original
|
PDF
|
BGM1014
OT363
|
marking s222
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
|
Original
|
PDF
|
BGM1014
OT363
771-BGM1014-T/R
BGM1014
marking s222
|
Untitled
Abstract: No abstract text available
Text: BGM1013 MMIC wideband amplifier Rev. 5 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
|
Original
|
PDF
|
BGM1013
OT363
|
BGA2031
Abstract: BGA6489 smd code marking 616 smd Product type marking code 039 MGX400
Text: BGA6489 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6489 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic, low
|
Original
|
PDF
|
BGA6489
BGA6489
BGA6x89
BGA2031
smd code marking 616
smd Product type marking code 039
MGX400
|
2.4 ghz transistor wifi amplifier
Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor
Text: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU768F
OT343F
JESD625-A
2.4 ghz transistor wifi amplifier
Germanium power
160 germanium transistor
wifi lna
Ghz dB transistor
|
|
|
BFU790F
Abstract: JESD625-A Germanium power
Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU790F
OT343F
JESD625-A
BFU790F
Germanium power
|
BFU760F
Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU760F
OT343F
JESD625-A
BFU760F
bfu760
dielectric resonator oscillator
germanium transistor table
Germanium power
|
BFU725F
Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU725F
OT343F
JESD625-A
BFU725F
germanium transistors NPN
DRO lnb
ka-band mixer
Germanium diode data sheet
germanium npn
nxp power microwave transistor
RF Transistor reference
Germanium power
|
BFU690F
Abstract: JESD625-A umts
Text: BFU690F NPN wideband silicon RF transistor Rev. 1 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
|
Original
|
PDF
|
BFU690F
OT343F
JESD625-A
BFU690F
umts
|
BFU610F
Abstract: bfu6 NXP Bluetooth IC JESD625-A BFU610
Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
|
Original
|
PDF
|
BFU610F
OT343F
JESD625-A
BFU610F
bfu6
NXP Bluetooth IC
BFU610
|
DRO lnb
Abstract: JESD625-A BFU630 BFU630F
Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
|
Original
|
PDF
|
BFU630F
OT343F
JESD625-A
DRO lnb
BFU630
BFU630F
|
BFU660F
Abstract: sdars JESD625-A 25CCBS
Text: BFU660F NPN wideband silicon RF transistor Rev. 1 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
|
Original
|
PDF
|
BFU660F
OT343F
JESD625-A
BFU660F
sdars
25CCBS
|
Untitled
Abstract: No abstract text available
Text: BFU610F NPN wideband silicon RF transistor Rev. 2 — 11 January 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
|
Original
|
PDF
|
BFU610F
OT343F
JESD625-A
|
transistor marking N1
Abstract: LNB ka band Germanium power
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
Germanium power
|
JESD625-A
Abstract: BFU710F DRO lnb Germanium power
Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
|
Original
|
PDF
|
BFU710F
OT343F
JESD625-A
BFU710F
DRO lnb
Germanium power
|
