Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NXP DATE CODE MARKING Search Results

    NXP DATE CODE MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MSP430F2274MDATEP Texas Instruments 16-bit Ultra-Low-Power Micro controller, 32kB Flash, 1K RAM 38-TSSOP -55 to 125 Visit Texas Instruments Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy

    NXP DATE CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 PINNING MARKING • Low forward voltage


    Original     		PDF M3D088 PMBD353 613514/04/pp7

    PMBD353

    Abstract: NXP PMBD353
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 MARKING • Low forward voltage


    Original     		PDF M3D088 PMBD353 613514/04/pp7 PMBD353 NXP PMBD353

    NXP BAV199 date code

    Abstract: BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 MARKING • Plastic SMD package


    Original     		PDF M3D088 BAV199 613514/04/pp8 NXP BAV199 date code BAV199 NXP marking code diode smd marking jy smd code marking WV BAV199

    BAV199

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D088 BAV199 Low-leakage double diode Product data sheet Supersedes data of 1999 May 11 2001 Oct 12 NXP Semiconductors Product data sheet Low-leakage double diode FEATURES BAV199 PINNING MARKING • Plastic SMD package


    Original     		PDF M3D088 BAV199 613514/04/pp8 BAV199

    NXP date code marking

    Abstract: marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE PMBT2222 SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p PMBT2222A
    Text: PMBT2222; PMBT2222A NPN switching transistors Rev. 6 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description NPN switching transistors in a small SOT23 TO-236AB Surface-Mounted Device (SMD) plastic package. Table 1. Product overview


    Original     		PDF PMBT2222; PMBT2222A O-236AB) PMBT2222 PMBT2222A O-236AB PMBT2907 PMBT2907A NXP date code marking marking 1B marking code v6 SOT23 NXP MARKING SMD IC CODE SOT23 NXP power dissipation TO-236AB MARKING CODE SMD IC PMBT2222A,215 smd code marking .1p

    TRANSISTOR SMD MARKING CODE LF

    Abstract: NXP TRANSISTOR SMD MARKING CODE SOT23 bsr14 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR13; BSR14 NPN switching transistors Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 13 NXP Semiconductors Product data sheet NPN switching transistors BSR13; BSR14 FEATURES PINNING • High current max. 800 mA


    Original     		PDF BSR13; BSR14 BSR15 BSR16. BSR13 BSR14 TRANSISTOR SMD MARKING CODE LF NXP TRANSISTOR SMD MARKING CODE SOT23 nxp transistors Standard Marking TRANSISTOR SMD letter CODE PACKAGE SOT23 smd marking NXP date code marking BSR14 SOT23 semiconductors replacement guide LF marking code smd transistor

    TRANSISTOR SMD MARKING CODE LF

    Abstract: smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1
    Text: 2PA1774 PNP general-purpose transistor Rev. 05 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 SC-75 plastic package. The NPN complement is 2PC4617. 1.2 Features „ Low current (max. 150 mA) „ Low voltage (max. 50 V)


    Original     		PDF 2PA1774 OT416 SC-75) 2PC4617. sym013 2PA1774Q 2PA1774R 2PA1774S SC-75 OT416 TRANSISTOR SMD MARKING CODE LF smd transistor marking A2 NXP SMD TRANSISTOR MARKING CODE NXP date code marking SMD TRANSISTOR MARKING CODE YR marking code DG SMD Transistor TRANSISTOR SMD npn MARKING CODE YR transistor marking DG NXP TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1

    Untitled

    Abstract: No abstract text available
    Text: ES_LPC2470_78 Errata sheet LPC2470/78 Rev. 8.1 — 1 July 2012 Errata sheet Document information Info Content Keywords LPC2470FBD208; LPC2470FET208; LPC2478FBD208; LPC2478FET208, LPC2470/78 errata Abstract This errata sheet describes both the known functional problems and any


    Original     		PDF LPC2470 LPC2470/78 LPC2470FBD208; LPC2470FET208; LPC2478FBD208; LPC2478FET208, LPC2470/78

    LPC2387

    Abstract: C104 C144
    Text: ES_LPC2387 Errata sheet LPC2387 Rev. 6 — 1 March 2011 Errata sheet Document information Info Content Keywords LPC2387 errata Abstract This errata sheet describes both the known functional problems and any deviations from the electrical specifications known at the release date of


    Original     		PDF LPC2387 LPC2387 C104 C144

    NXP date code marking

    Abstract: No abstract text available
    Text: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  Low diode capacitance  Low diode forward resistance


    Original     		PDF BAP50LX OD882D sym006 BAP50LX DFN1006D-2 NXP date code marking

    Untitled

    Abstract: No abstract text available
    Text: ES_LPC11Axx Errata sheet LPC11Axx Rev. 2 — 15 January 2013 Errata sheet Document information Info Content Keywords LPC11A02UK; LPC11A04UK; LPC11A11FHN33; LPC11A12FHN33; LPC11A12FBD48; LPC11A13FHI33; LPC11A14FHN33; LPC11A14FBD48 LPC11Axx errata Abstract This errata sheet describes both the known functional problems and any


    Original     		PDF LPC11Axx LPC11A02UK; LPC11A04UK; LPC11A11FHN33; LPC11A12FHN33; LPC11A12FBD48; LPC11A13FHI33; LPC11A14FHN33; LPC11A14FBD48

    lpc1751

    Abstract: No abstract text available
    Text: ES_LPC1751 Errata sheet LPC1751 Rev. 10 — 8 February 2011 Errata sheet Document information Info Content Keywords LPC1751 errata Abstract This errata sheet describes both the known functional problems and any deviations from the electrical specifications known at the release date of


    Original     		PDF LPC1751 LPC1751

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC857QAS 45 V, 100 mA PNP/PNP general-purpose transistor 25 July 2014 Product data sheet 1. General description PNP/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847QAS.


    Original     		PDF BC857QAS DFN1010B-6 OT1216) BC847QAS. BC847QAPN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		PDF BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101

    diode NXP marking code N1

    Abstract: No abstract text available
    Text: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.


    Original     		PDF BB174LX BB174LX OD882D DFN1006D-2) sym008 diode NXP marking code N1

    nxp marking code

    Abstract: nxp marking d1 NXP date code marking
    Text: INTEGRATED CIRCUITS ERRATA SHEET Date: Document Release: Device Affected: 2009 August 11 Version 1.1 LPC2888/D1 This errata sheet describes both the functional problems and any deviations from the electrical specifications known at the release date of this document.


    Original     		PDF LPC2888/D1 LPC2888/D1 nxp marking code nxp marking d1 NXP date code marking

    v08 smd marking code

    Abstract: NXP date code marking nxp Standard Marking SOT1202 SOT1115 marking nxp package 74LVC1G08GW
    Text: 74LVC1G08 Single 2-input AND gate Rev. 8 — 19 October 2010 Product Specification 1. General description The 74LVC1G08 provides one 2-input AND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications.


    Original     		PDF 74LVC1G08 74LVC1G08 OT886 74LVC1G08GM OT353-1 74LVC1G08GW v08 smd marking code NXP date code marking nxp Standard Marking SOT1202 SOT1115 marking nxp package

    NXP SMD ic MARKING CODE

    Abstract: smd code marking ft sot23 marking 41 sot23 nxp
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB 2PA1774RMB 2PA1774SMB OT883B 2PC4617QMB NXP SMD ic MARKING CODE smd code marking ft sot23 marking 41 sot23 nxp

    Untitled

    Abstract: No abstract text available
    Text: 83B 2PA1774xMB series SO T8 40 V, 100 mA PNP general-purpose transistors Rev. 1 — 23 March 2012 Product data sheet 1. Product profile 1.1 General description PNP general-purpose transistors in a leadless ultra small DFN1006B-3 SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PDF 2PA1774xMB DFN1006B-3 OT883B) 2PA1774QMB OT883B 2PC4617QMB 2PA1774RMB 2PC4617RMB 2PA1774SMB

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB75UPE DFN1010D-3 OT1215)

    NXP date code marking

    Abstract: a/NXP date code marking
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215)

    NXP date code marking

    Abstract: nxp marking code LPC2888 MARKING CODE NXP
    Text: INTEGRATED CIRCUITS ERRATA SHEET Date: Document Release: Device Affected: 2009 August 11 Version 1.1 LPC2888/01 This errata sheet describes both the functional problems and any deviations from the electrical specifications known at the release date of this document.


    Original     		PDF LPC2888/01 LPC2888/01 NXP date code marking nxp marking code LPC2888 MARKING CODE NXP

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB75UPE DFN1010D-3 OT1215)