NX8341UJ
Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
PDF
|
NX8341
NX8341UJ
NX8341UH
NX8341UL
NX8341UN
6R01
10 gb laser diode
NX8341TB
|
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
|
Original
|
PDF
|
|
NX8341UH
Abstract: NX8341 NX8341UH-AZ NX8341UN NX8341UN-AZ 10 gb laser diode
Text: PRELIMINARY DATA SHEET NEC's 1310 nm AlGalnAs MQW-DFB TOSA NX8341 Series FOR 10 Gb/s APPLICATION FEATURES • INTERNAL OPTICAL ISOLATOR • OPTICAL OUTPUT POWER: NX8341UH Pf = -2 dBm • LOW THRESHOLD CURRENT Ith = 8 mA TYP @ TC = 25°C • WIDE OPERATING TEMPERATURE RANGE:
|
Original
|
PDF
|
NX8341
NX8341UH
NX8341UN
NX8341UH
NX8341UH-AZ
NX8341UN
NX8341UN-AZ
10 gb laser diode
|
nec 2702
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
PDF
|
NX8341
nec 2702
|
NX8341UH
Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
|
Original
|
PDF
|
NX8341
NX8341UH
NX8341UN
NX8341UH
10 gb laser diode
nec 2702
NX8341UN
PX10160E
|
nec 2702
Abstract: nec 2702 K
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
PDF
|
NX8341
nec 2702
nec 2702 K
|
10G EML TOSA
Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely
|
Original
|
PDF
|
acros88-2247
04/2M
10G EML TOSA
TOSA 10G DFB
EML TOSA 25g
10G APD ROSA
TOSA 10G EML
laser DFB 1550nm 10mW
NEC TOSA 10G
10g tosa EML
25g EML TOSA
TOSA 1310 10G
|
nec 2702
Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
PDF
|
NX8341
PL10525EJ03V0DS
nec 2702
2702 NEC
NX8341UH
NX8341UJ
NX8341UL
NX8341TB-AZ
10 gb laser diode
5PIN
g 995
|
NX8341UH
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's 1310 nm AlGalnAs MQW-DFB TOSA NX8341 Series FOR 10 Gb/s APPLICATION FEATURES • INTERNAL OPTICAL ISOLATOR • OPTICAL OUTPUT POWER: NX8341UH Pf = -2 dBm • LOW THRESHOLD CURRENT Ith = 8 mA TYP @ TC = 25°C • WIDE OPERATING TEMPERATURE RANGE:
|
Original
|
PDF
|
NX8341
NX8341UN
NX8341UH
NX8341UH
|
NX8341
Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
|
Original
|
PDF
|
NX8341
PL10525EJ02V0DS
NX8341UH
NX8341UJ
NX8341UL
NX8341UN
10 gb laser diode
NX8341UJ-AZ
|
