Untitled
Abstract: No abstract text available
Text: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20
|
Original
|
MG50D2DM1
time900n
HL080HD5
Code4-310
NumberTR00400310
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20
|
Original
|
MG30G2DM1
time700n
HL093HD5
Code4-310
NumberTR00400310
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MG30D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20
|
Original
|
MG30D2DM1
time900n
HL093HD5
Code4-310
NumberTR00400310
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MG50G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20
|
Original
|
MG50G2DM1
time700n
HL093HD5
Code4-310
NumberTR00400310
|
PDF
|