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    NTMFS4H02NF Price and Stock

    Flip Electronics NTMFS4H02NFT1G

    MOSFET N-CH 25V 37A/193A 5DFN
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    onsemi NTMFS4H02NFT1G

    MOSFET N-CH 25V 37A/193A 5DFN
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    Rochester Electronics NTMFS4H02NFT1G 8 1
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    onsemi NTMFS4H02NFT3G

    MOSFET N-CH 25V 37A/193A 5DFN
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    NTMFS4H02NF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTMFS4H02NFT1G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF
    NTMFS4H02NFT3G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF

    NTMFS4H02NF Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02NF NTMFS4H02NF/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02NF NTMFS4H02NF/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02NF NTMFS4H02NF/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02N NTMFS4H02N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		PDF NTMFS4H02N NTMFS4H02N/D