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    NTMFS4H02N Search Results

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    NTMFS4H02N Price and Stock

    onsemi NTMFS4H02NT1G

    MOSFET N-CH 25V 37A/193A 5DFN
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    onsemi NTMFS4H02NT3G

    MOSFET N-CH 25V 37A/193A 5DFN
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    Flip Electronics NTMFS4H02NFT1G

    MOSFET N-CH 25V 37A/193A 5DFN
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    onsemi NTMFS4H02NFT1G

    MOSFET N-CH 25V 37A/193A 5DFN
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    Rochester Electronics NTMFS4H02NFT1G 1,508 1
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    onsemi NTMFS4H02NFT3G

    MOSFET N-CH 25V 37A/193A 5DFN
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    NTMFS4H02N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4H02NFT1G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF
    NTMFS4H02NFT3G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF
    NTMFS4H02NT1G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF
    NTMFS4H02NT3G ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 37A SO8FL Original PDF

    NTMFS4H02N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02NF NTMFS4H02NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02N NTMFS4H02N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02N NTMFS4H02N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02NF NTMFS4H02NF/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02N NTMFS4H02N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02N NTMFS4H02N/D PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4H02NF Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • • Integrated Schottky Diode Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance


    Original     		NTMFS4H02NF NTMFS4H02NF/D PDF