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    NTE59 Price and Stock

    NTE Electronics Inc NTE5981

    Rectifier Diode,50V V(Rrm),do-5 Rohs Compliant: Yes |Nte Electronics NTE5981
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    NTE Electronics Inc NTE5945

    Diode Module, Single, 200V; Repetitive Peak Reverse Voltage:200V; Average Forward Current:15A; Forward Voltage Max:1.5V; Diode Module Configuration:Single; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Nte Electronics NTE5945
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    NTE Electronics Inc NTE5990

    Standard Diode, 40A, 400V, Do-5; Repetitive Peak Reverse Voltage:400V; Average Forward Current:40A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE5990
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    NTE Electronics Inc NTE5911

    Rectifier Diode,1Kv V(Rrm),do-4 Rohs Compliant: Yes |Nte Electronics NTE5911
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    NTE Electronics Inc NTE5921

    Rectifier Diode,400V V(Rrm),do-4 |Nte Electronics NTE5921
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    NTE59 Datasheets (80)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE59 NTE Electronics PNP Silicon Complementary Transistor High Power Audio Output Original PDF
    NTE5900 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5901 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5902 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5903 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5904 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5905 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5906 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE5907 NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF
    NTE5908 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5909 NTE Electronics Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. Original PDF
    NTE5910 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5911 NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF
    NTE5912 NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF
    NTE5913 NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF
    NTE5914 NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF
    NTE5915 NTE Electronics Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. Original PDF
    NTE5916 NTE Electronics Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. Original PDF
    NTE5917 NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF
    NTE5918 NTE Electronics Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 20A. Original PDF

    NTE59 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005

    NTE5934

    Abstract: No abstract text available
    Text: NTE5934 & NTE5935 Industrial Rectifier 75 Amp, Ultra High Power, Heavy Duty, Press Fit Features: D Available in Cathode−to−Case NTE5934 or Anode−to−Case (NTE5935) D Void Free Vacuum Die Soldering for Maximum Mechanical Strength and Heat Dissipation


    Original     		PDF NTE5934 NTE5935 NTE5934) NTE5935) NTE5934

    NTE5911

    Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
    Text: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp, DO4 Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


    Original     		PDF NTE5892 NTE5899 NTE5900 NTE5911 NTE5911 "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5899

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005 500Aal-Mechanical NTE5906 NTE5907 NTE6005 "Power rectifier Diode"

    NTE597

    Abstract: No abstract text available
    Text: NTE597 Silicon Rectifier Ultra Fast, 200V, 8A Description: The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature


    Original     		PDF NTE597 NTE597

    NTE5962

    Abstract: NTE5963 datasheets diode nte5963 NTE5966 NTE5967
    Text: NTE5962 & NTE5963 NTE5966 & NTE5967 Silicon Power Rectifier Diode, 25 Amp Features: D 25 Amp @ TC = +100°C D 300 Amp Surge Capability D Rugged Construction D Available in Standard NTE5962, NTE5966 and Reverse (NTE5963, NTE5967) Polarity Absolute Maximum Ratings:


    Original     		PDF NTE5962 NTE5963 NTE5966 NTE5967 NTE5962, NTE5966) NTE5963, NTE5967) NTE5963* NTE5962 NTE5963 datasheets diode nte5963 NTE5966 NTE5967

    NTE598

    Abstract: No abstract text available
    Text: NTE598 Silicon Rectifier Ultra Fast, 600V, 8A Description: The NTE598 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature


    Original     		PDF NTE598 NTE598

    NTE594

    Abstract: band switching diode
    Text: NTE594 Silicon Diode, Bandswitch Description: The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended for thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


    Original     		PDF NTE594 NTE594 100mA 200mW 430K/W band switching diode

    Untitled

    Abstract: No abstract text available
    Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a


    Original     		PDF NTE5930 NTE5931 NTE5930 NTE5931 NTE5930, NTE5931*

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005
    Text: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:


    Original     		PDF NTE5906, NTE5907, NTE5980 NTE6005 50rmal NTE5906 NTE5907 NTE6005

    NTE6020

    Abstract: NTE5926 NTE5927 NTE6021 NTE6022 NTE6023 NTE6026 NTE6027 NTE6030 NTE6031
    Text: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier, 60A Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = –65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM


    Original     		PDF NTE5926, NTE5927, NTE6020 NTE6045 NTE6020, NTE6021* NTE6022, NTE6023* NTE6026, NTE6027* NTE5926 NTE5927 NTE6021 NTE6022 NTE6023 NTE6026 NTE6027 NTE6030 NTE6031

    493a2s

    Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
    Text: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


    Original     		PDF NTE5844 NTE5845, NTE5912 NTE5933 NTE5844, NTE5933 493a2s NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NF-2A

    NTE5911

    Abstract: NTE5892 NTE5899 NTE5900
    Text: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


    Original     		PDF NTE5892 NTE5899 NTE5900 NTE5911 NTE5911 NTE5899

    NTE596

    Abstract: No abstract text available
    Text: NTE596 Silicon Diode, Dual, Common Anode, High Speed Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film


    Original     		PDF NTE596 NTE596 500mA

    NTE5953

    Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
    Text: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A


    Original     		PDF NTE5940 NTE5953 NTE5953 NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5941 NTE5943 NTE5946

    NTE593

    Abstract: No abstract text available
    Text: NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings:


    Original     		PDF NTE593 NTE593 500mA 150mA

    NTE58

    Abstract: NTE59
    Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE58 NTE59 NTE58 NTE59

    Untitled

    Abstract: No abstract text available
    Text: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE590 NTE591 NTE590) NTE591)

    NTE595

    Abstract: No abstract text available
    Text: NTE595 Silicon Diode, Dual, Common Cathode, High Speed Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film


    Original     		PDF NTE595 NTE595 500mA

    NTE6044

    Abstract: NTE6023 NTE6042 NTE6035 NTE6026 NTE6022 nte6040 NTE6027 NTE6030 NTE6031
    Text: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier 60 Amp, DO5 Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = −65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM


    Original     		PDF NTE5926, NTE5927, NTE6020 NTE6045 NTE6020, NTE6021* NTE6022, NTE6023* NTE6026, NTE6027* NTE6044 NTE6023 NTE6042 NTE6035 NTE6026 NTE6022 nte6040 NTE6027 NTE6030 NTE6031

    NTE5930

    Abstract: NTE5931 NTE59
    Text: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a


    Original     		PDF NTE5930 NTE5931 NTE5930 NTE5931 NTE5930, NTE5931* NTE59

    NTE591

    Abstract: NTE590
    Text: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE590 NTE591 NTE590) NTE591) 100mA NTE591 NTE590

    NTE590

    Abstract: NTE591 NTE59
    Text: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original     		PDF NTE590 NTE591 NTE590) NTE591) 100mA NTE590 NTE591 NTE59

    NTE5804

    Abstract: NTE5832 nte599
    Text: INDUSTRIAL RECTIFIERS Maximum Average Rectified Forward Current Ip In Amperes P RV 3A Volts 50 NTE5800 50 100 NTE5801 100 200 NTE5802 200 300 NTE5803 300 NTE5804 400 400 500 NTE5852 NTE5833* NTE5834 20A NTE5912 25A NTE5980 40A NTE5871* NTE5941* NTE5893* NTE5913*


    OCR Scan     		PDF NTE5852 NTE5834 NTE5940 NTE5892 NTE5912 NTE5980 NTE5851* NTE5832 NTE5870 NTE5850 NTE5804 NTE5832 nte599