NTE3321 Search Results
NTE3321 Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
|---|---|---|---|---|---|---|
| NTE3321 |
|
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch | Original |
NTE3321 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
|---|---|---|---|
NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3321 NTE3321 | |
NTE3321Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3321 NTE3321 | |
|
Contextual Info: NTE3321 Insulated Gate Bipolar Transistor N−Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: TA = +25°C unless otherwise specified |
Original |
NTE3321 |