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    NTE270 Price and Stock

    NTE Electronics Inc NTE270

    Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:10A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:-; Dc Current Gain Hfe Min:1000Hfe Rohs Compliant: Yes |Nte Electronics NTE270
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NTE270 Bulk 1
    • 1 -
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    Onlinecomponents.com NTE270 10
    • 1 -
    • 10 $4.84
    • 100 $3.8
    • 1000 $3.38
    • 10000 $3.17
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    Bristol Electronics NTE270 38 1
    • 1 $6.72
    • 10 $4.368
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
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    Quest Components NTE270 30
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
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    TME NTE270 1
    • 1 $5.15
    • 10 $4.09
    • 100 $4.09
    • 1000 $4.09
    • 10000 $4.09
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    NTE270 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTE270 NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF
    NTE2708 NTE Electronics Integrated Circuit NMOS, 8K UV EPROM, 450ns Original PDF

    NTE270 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2708

    Abstract: 1702 eprom 1702 eprom programmer 74LS
    Text: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–


    Original     		PDF NTE2708 450ns NTE2708 1702 eprom 1702 eprom programmer 74LS

    NTE270

    Abstract: No abstract text available
    Text: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original     		PDF NTE270 NTE271 NTE270

    Untitled

    Abstract: No abstract text available
    Text: NTE270 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.


    Original     		PDF NTE270

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    Untitled

    Abstract: No abstract text available
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		PDF NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD

    NPN S2e

    Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
    Text: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum


    OCR Scan     		PDF T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan     		PDF NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128